39 EDS Members Elected to the IEEE Grade of Fellow

Effective 1 January 2001


Richard Keith Ahrenkiel: For contributions to measurement of minority carrier lifetimes in semiconductor materials

Barry E. Burke: For contributions to the technology development of charge-coupled devices for imaging and signal processing

Sethumadhavan Chandrasekhar: For contributions to the design and development of 1.55 um opto-electronic integrated circuits for wide-spectrum application in optical communications

Ih-Chin Chen: For leadership in the development of advanced CMOS technologies

John D. Cressler: For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors

Sorin Cristoloveanu: For contributions to Silicon-on-Insulator device physics, technology, and characterization

Rik W.A.A. de Doncker: For contributions to the development of high-power resonant soft-switching converters and high-performance digital control of induction machines

Sang H. Dhong: For contribution to high speed processor and memory chip design

Samir M. El-Ghazaly: For contributions to the analysis and simulations of microwave devices and circuits

Arthur Charles: For contributions to semiconductor microstructure fabrication

Aditya Kumar Gupta: For contributions to the advancement of microwave monolithic integrated circuit technology and leadership in the development of manufacturable processes

Yoshiaki Daimon Hagiwara: For pioneering work on, and development of, solid-state imagers

Takeo Hattori: For his contributions to the studies on the formation and the characterization of ultrathin gate oxides for ULSI devices

James N. Hollenhorst: For contributions to ultra-high performance avalanche photodiodes.

Wei Hwang: For contributions to high density cell technology and high speed Dynamic Random Access Memory design.

Hiroshi Ishiwara: For contributions to Si-based heterostructure devices and ferroelectric memories

Dieter Stefan Jager: For contributions to the development of device concepts in microwaves and photonics

Robert Forrest Kwasnick: For contributions to the development of amorphous silicon flat panel x-ray imager technology

Kei May Lau: For contributions to III-V compound semiconductor heterostructure materials and devices

Chin Chung Lee: For pioneering research in fluxless bonding technology and contributions to thermal design tools for electronic devices and packages

Baruch Levush: For leadership in the development of theoretical and computational models of free electron radiation sources

Bernard S. Meyerson: For the invention of ultra high vacuum chemical vapor deposition and its application to low temperature epitaxy of SiGe for the fabrication of heterojunction bipolar integrated circuits for telecommunications

Akihiko Morino: For contributions to the development of System-on-a-Chip for multimedia applications

Kenji Nishi: For contributions to semiconductor process and device modeling and the development of software for their simulation

Jon Harris Orloff: For contributions to Focussed Ion Beam Technology

Stephen John Pearton: For development of advanced semiconductor processing techniques and their application to compound semiconductor devices

John Xavier Przybysz: For contributions in the development and application of Josephson digital circuits to electronic systems, especially radars, communication satellites and data switching networks

Hans-Martin Rein: For contributions to the design of high-speed silicon and silicon/germanium bipolar circuits, especially as applied to fiber-optic systems

Edward Anthony Rezek: For contributions to GaAs and InP monolithic microwave integrated circuits and optoelectronic devices

Arvind Kumar Sharma: For contributions to active device and passive component modeling, and design of high power monolithic millimeter-wave integrated circuits

Krishna Shenai: For contributions to the understanding, development and application of power semiconductor devices and circuits

Ritu Shrivastava: For contributions to high performance CMOS memory technology and product development

James C. Sturm: For contributions to novel silicon-based semiconductor devices, large-area electronics, and engineering education

Peter Vettiger: For contributions to, and leadership in, the development of microfabrication processes for electronic, optoelectronic, and microelectrocomechanical devices, circuits, and systems

Yang Yuan Wang: For leadership in China's semiconductor research and education

Isamu Washizuka: For contributions to the technology and applications of liquid crystal displays

Andrew B. Wittkower: For contributions and leadership in the development and advancement of ion implantation techniques, equipment and companies

Hon-Sum Philip Wong: For contributions to solid-state image sensors and nanoscale CMOS devices

Max Neil Yoder: For leadership of government sponsored development of microwave integrated circuits

The Nominations of the Following Individuals Were Evaluated by EDS But They Are Not Current Members of EDS

Karl W. Boer: For contributions to research, development, and commercialization of thin film solar cells

Satoshi Hiyamizu: For contributions to the realization of the first high electron mobility transistor (HEMT)

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