| The year 2000 Nobel Prize in Physics was
awarded one half to Jack S. Kilby "for his part in the invention of the integrated
circuit," and one half jointly to Herber Kroemer and Zhores I. Alferov for
"developing semiconductor heterostructures used in high-speed- and
opto-electronics." Both Jack Kilby and Herbert Kroemer are members of the Electron
Devices Society, while Zhores Alferov is a member of LEOS. Their work was recognized for
providing the foundation for modern information technology. Not only do we want to
congratulate our colleagues for this recognition of their contributions, but this award
also recognizes the impact that the electron devices of our Society have made to
information technology. This award was made for invention rather than a discovery in
physics. The three biographies of the Nobel recipients have been written by close colleagues. Jim Merz was recruited by Herb Kroemer to come to the University of California at Santa Barbara. Willis Adcock was Jack Kilby's supervisor at TI when he demonstrated his integrated circuit. Nick Holonyak and Zhores Alferov have visited and worked with each other for many years. H. Craig Casey, Jr. |
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Jack S. Kilby |
Jack S. Kilby has been awarded the Nobel Prize in Physics for 2000 by the Royal Swedish Academy of Science "for his part in the invention of the integrated circuit."
Jack joined Texas Instruments, Dallas, TX, in June 1958, and became involved with his idea of a miniature circuit made up only with semiconductor parts. He demonstrated the first simple circuits in September 1958. His impaired hearing was a factor in his interest in hearing aids and miniaturization.
Pat Haggerty, President of Texas Instruments, immediately became very interested in the project and this insured management support for an expanded program.
The applications for integrated circuits grew rapidly. Fairchild Semiconductor became a major player with the inventions of Bob Noyce. These developments are well described in the paper: "Invention of the Integrated Circuit," J. S. Kilby, IEEE Transactions on Electron Devices, vol. ED-23, no. 7, p. 648, July 1976.
The past 50 years have witnessed such a remarkable growth of the related information industries: semiconductor, computers and telecommunications. The developments have created such a wide application of products that as we enter the new millennium we will witness major global transformation of national societies.
Jack Kilby was born in Jefferson City, MO, in 1923. He grew up in Great Bend, KS. He received his B.S. in electrical engineering from the University of Illinois and a M.S. degree from the University of Wisconsin. In 1947, he began his career with the Centralab Division of Globe Union Inc. in Milwaukee, and then in 1958 joined TI. He is a Fellow of the IEEE and a member of the National Academy of Engineering. Among his many awards are the IEEE's Medal of Honor, the Cledo Brunetti Award, and the David Sarnoff Award. He holds over 60 patents.
Congratulations, Jack Kilby.
Willis Adcock
Austin, TX
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Herbert Kroemer |
The theme that threads its way through the many accomplishments of Herbert Kroemer is best described by his favorite talk: "Heterostructures for Everything". His interest in utilizing combinations of dissimilar materials for improved devices motivated a lifetime of work; his insistence that one understand the band diagram resulting from these combinations was legendary - "If you cannot draw the band diagram, you don't know what you are talking about!" In an early paper published in the RCA Review (1957), he was the first to realize the consequences of the electric fields generated at heterointerfaces between semiconductor materials. One such consequence was the possibility of making a greatly improved transistor (the heterojunction bipolar transistor, or "HBT") by using a wide bandgap emitter. Today the HBT is at the heart of the highest-speed commercially available electronic devices.
Notably, Kroemer was also the first to realize the possibilities for carrier and photon confinement offered by a double heterostructure, at a time when the intense research on homojunction semiconductor light emitters seemed to be making little progress towards a practical room-temperature laser. In what proved to be another landmark paper in the Proceedings of the IEEE (1963), a paper which drew little attention at the time, Kroemer suggested that a vastly improved laser could be designed by sandwiching a layer of a narrow bandgap semiconductor between two wide-bandgap semiconductors. This novel idea is the basis for the entire modern optoelectronics industry.
Today Kroemer continues his fascination with dissimilar materials through his investigations of so-called broken-bandgap combinations of arsenides and antimonides having mid-infrared device applications, and the induced superconducting behavior of semiconductors sandwiched between superconductors.
Kroemer's impact in education has also been significant, with two unique and widely used textbooks. Thermal Physics by Kittel and Kroemer (Freeman, San Francisco, 1980), was a result of Kroemer's many suggestions to Charles Kittel for improvement of the latter's original version of the book; Kittel consequently invited Kroemer to join him in a thorough revision of that work. The second book, Quantum Mechanics (Prentice Hall, Englewood Cliffs, 1994), culminated years of teaching intermediate quantum mechanics to electrical engineers, condensed matter physicists, and materials scientists.
Herbert Kroemer, the Donald W. Whittier Professor of Electrical Engineering and Professor of Materials at the University of California Santa Barbara (UCSB), was born in Germany in 1928. He received his Ph.D. from the University of Gottingen at the age of 24. He later immigrated to the U.S., where he worked at RCA Laboratories (1954-57), Varian Associates (1959-66), the University of Colorado, Boulder (1968-76), and UCSB (1976-present). At UCSB he convinced the administration to invest its limited resources not in conventional Si technology, but in the emerging field of compound semiconductors, which Kroemer, as founding member of the group, built into a world-class program. He is the winner of several major awards, including the J. J. Ebers Award, the Jack Morton Award of the IEEE, the Heinrich Welker Medal, and the Alexander von Humboldt Research award. He holds honorary doctoral degrees from the Technical University of Aachen, Germany, and the University of Lund in Sweden, and became a member of the National Academy of Engineering in 1997.
Jim Merz
University of Notre Dame
Notre Dame, IN
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Zhores I. Alferov |
When R.H. Rediker's group (Lincoln Laboratory, MIT) reported generation and long-range transmission (and detection) of a recombination-radiation signal from a simple Zn-diffused GaAs p-n junction at the 1962 IRE Solid State Device Research Conference (July, Durham, NH), optoelectronics became a reality. Immediately the race began to defeat the large recombination-radiation linewidth (³100 Å) and to make a laser of this strangest of all light-emitting substancesÑthe semiconductor. Little did anyone appreciate that by fall of 1962, GaAs and the III-V alloy GaAs1-xPx would be operating as directly-driven (current-driven) diode lasers. Simulated recombination radiation in a semiconductor cavity demolished the question of the broad linewidth, and the erroneous speculation and wish for some form of discrete transition (e.g., an unknown mysterious atom) in a p-n junction. Also demolished, by the GaAsP laser, was the question of the viability of III-V alloys, which indeed, were required for heterojunctions. All of these questions were settled in 1962.
After these break-through events (1962), one of the first to appreciate the fact that a diode laser should take the form of a p-n double heterojunction was Zhores I. Alferov, the 2000 Nobel laureate. In fact, after first meeting Alferov in Leningrad in 1967, in a trip report of limited circulation, I wrote:
"Zhorez [sic] then took me to his group to talk about heterojunctions and GaAsP. Heterojunctions are very interesting to Zhorez [sic]; he wants to use such junctions as high efficiency emitters into GaAs platelets sandwiched between wider gap material on either side. He thinks maybe a low threshold GaAs laser can be built."
After the semiconductor laser work of 1962, Alferov and his research group launched a large effort to realize double heterojunction devices (for superinjection and carrier and photon confinement). He was able, with the AlGaAs-GaAs system, to demonstrate the first low threshold double heterostructure solar cells (1970), heterojunction p-n-p-n switches (1969), laser p-n-p-n switches (1971), high efficiency AlGaAs heterostructure LEDs (1968), wide-gap emitter AlGaAs transistors (1972), and grating lasers with narrow beam divergence (1974). He is credited with being one of the prime instigators of the new field of heterostructure electronics, which now includes quantum well heterostructures and superlattices. His most recent work has been concerned with trying to convert the quantum-well laser into a quantum-dot laser.
Zhores Alferov was born on March 15, 1930, in Vitebsk, Byelorus (USSR) and received most of his higher education in Leningrad before becoming a permanent member of the Ioffe Physico-Technical Institute and ultimately the director of the Institute, as well as now Russian Academy Vice President and member of the State Duma. He spent the winter of 1970 and spring of 1971 in Urbana as an Academy exchange visiting scientist. Besides being a member of the Russian Academy of Sciences, he is a foreign member of numerous academies, including the U.S. National Academy of Sciences (1990) and the National Academy of Engineering (1990). He has published over 400 papers on heterojunctions and has received many awards, including the Ballantyne Medal (Franklin Institute, 1971), Lenin Prize (1972), H-P Europhysics Prize (1978), State Prize (1984), GaAs Conference Award and Welker Medal (1987), Karpinski Prize (1989), Ioffe Prize (1996), and OSA Holonyak Award (2000).
Nick Holonyak
University of Illinois
Urbana, IL
The IEEE Electron Devices Society invites the submission of nominations for the 2001 J. J. Ebers Award. This award is presented annually by EDS to honor an individual(s) who has made either a single or a series of contributions of recognized scientific, economic, or social significance to the broad field of electron devices. The recipient(s) is awarded a certificate and a check for $5,000, presented at the International Electron Devices Meeting (IEDM).
Nomination forms can be requested from the EDS Executive Office (see contact information on page 2). The deadline for submission of nominations for the 2001 award is July 13, 2001.
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Robert Adler, inventor of the TV remote control, receives his medal from Past IEEE President, Ken Laker. |
The highlight of the 2000 EDS AdCom Meeting in San Francisco was the EDS Millennium Medals Award Luncheon, which was held on Sunday, December 10. As part of IEEE's Third Millennium celebration, EDS presented its allotment of 45 IEEE Millennium Medals to its honored recipients, "For their outstanding contributions to the Electron Devices Society and to the field of electron devices." Presenting the awards were IEEE Past President Ken Laker and EDS President Cary Yang. Included in the ceremony were historical and personal anecdotes and information on each recipient prepared by the past EDS President and Awards Chair, H. Craig Casey Jr. Among the recipients were AdCom members, EDS Officers, and past editors of EDL, T-ED, and the EDS Newsletter.
Attending and receiving their medals were Robert Adler, Shojiro Asai, Frank S. Barnes, Dennis D. Buss, H. Craig Casey, Jr., Frederick H. Dill, Jr., Lester F. Eastman, James F. Gibbons, James S. Harris, Cyril Hilsum, David A. Hodges, James A. Hutchby, Renuka P. Jindal, Stephen Knight, Matt Kuhn, Alan L. McWhorter, James L. Merz, Richard S. Muller (represented by his wife), Harvey C. Nathanson, William T. Pietenpol, James D. Plummer, Robert H. Rediker, Joseph E. Rowe, J. Earl Thomas, Jr., Richard B. True, Glen Wade and Jerry M. Woodall. Recognized but not in attendance were recipients Willis A. Adcock, M. George Craford, Rudolf S. Engelbrecht, Clifford E. Fay, A. George Foyt, Eugene I. Gordon, Robert N. Hall, Nick Holonyak, Jr., Aleksandar B. Jaksic, Lucian A. Kasprzak, G. Ross Kilgore, Toivo Liimatainen, Hebert J. Reich, Ian Munro Ross, John S. Saby, John B. Singleton, Earl L. Steele, and Clare G. Thornton. EDS is proud to salute and reward these distinguished individuals, and deeply appreciates their efforts on behalf of the Society.
John K. Lowell
PDS Solutions Inc.
Richardson, TX
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Bernard S. Meyerson |
The 2000 J. J. Ebers Award, the prestigious Electron Devices Society award for contributions to electron devices, was presented to Dr. Bernard J. Meyerson of IBM at the International Electron Devices Meeting in San Francisco, CA, on December 11, 2000. This award recognizes his "Seminal Contributions to the Growth of Si/SiGe Heterostructures and Leadership in its Application to Telecommunications Integrated Circuits." This emerging technology has been applied to the manufacture of high-speed integrated circuits and promises to make a major impact on the technology that is utilized to manufacture integrated circuits that are used in high speed and wireless communications systems.
Bernard was born in New York City and attended the Bronx High School of Science. He then completed a BS in Physics at the City College of New York. Dr. Meyerson received a PhD in Solid State Physics from the City College of the City University of New York in 1980. His thesis work examined the growth and electrical properties of hydrogenated amorphous carbon, and this began his period of ten years work in the study of materials growth and analysis.
Upon completion of his PhD requirements, he joined IBM as a Research Staff member and focused his attention on studies of the fundamentals of the chemical deposition of thin films and their electrical properties. These studies spanned many materials, ranging from amorphous silicon to gallium arsenide. In the mid-1980's, he incorporated his understanding of these chemical systems into the growth of thin films by Ultra-High-Vacuum/Chemical Vapor Deposition. The most significant result of these studies was the deposition and growth of Silicon-Germanium epitaxial layers at temperatures of 500¡C and below, leading to the development of manufacturing techniques for the production of extremely high speed Si/Ge Heterojunction Bipolar Transistors (HBT).
Dr. Meyerson led a team of IBM research personnel to apply this Si/Ge HBT technology to the design and fabrication of integrated circuits, first for computer and then for communications applications. He then was instrumental in the formation of alliances between IBM and numerous corporations to leverage this high-speed technology to the manufacture of commercial products. Early consumer and commercial products included a 10 Gbps SONET data system and an 802.11b wireless LAN card.
IBM's analog and mixed signal development and subsequent commercialization of this technology was consolidated under Dr. Meyerson in 1998. He is presently Vice-President of the Communications Research and Development Center in IBM. This organization encompasses IBM's worldwide communications technology and circuit designs efforts and supports a rapidly increasing customer base.
Dr. Meyerson received IBM's highest honor in 1998, that of IBM Fellow. He is a Fellow of the American Physical Society. He holds over 40 patents and has published several hundred papers. He has received several awards for his work, including the Materials Research Society Medal in 1991, the Electrochemical Society Electronics Division Award in 1993, and was cited as "Inventor of the Year, 1997" by the New York State Legislature. The US Patent Office honored him with the "United States Distinguished Inventor of the Year" award in 1999 and he received the 1999 IEEE Ernst Weber Award for the leadership in the commercialization of the Si/Ge HBT technology.
The IEEE Electron Devices Society is pleased to recognize Dr. Meyerson for his pioneering work in this Si/Ge HBT technology. He has turned this laboratory activity into an emerging technology that has been commercialized to manufacture high-speed integrated circuits with application in the consumer and commercial sector of the electronics industry.
Alfred U. Mac Rae
Mac Rae Technologies
Berkeley Heights, NJ
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Michael S. Adler |
The IEEE Electron Devices Society is extremely proud of the services that it provides to its members. Its members generate the premier new developments in the field of electron devices and share these results with their peers and the world at large by publishing their papers in EDS journals and presenting results in its meetings. This is a global activity that is effective because of the efforts of numerous volunteers. Many of these volunteers labor in relative obscurity, with their only reward being the satisfaction that they receive in being an important part of a successful organization, namely of the Electron Devices Society. They should be thanked.
The Electron Devices Society, Distinguished Service Award was established to honor an outstanding volunteer each year. It is a challenge to select just one outstanding volunteer each year. There are numerous outstanding volunteers in EDS and it is a shame that they can't all be given significant recognition. In 2000, we are pleased to single out one of those volunteers for his contributions. We honor Michael S. Adler as the recipient of this award. Mike is well known among the active members and volunteers. His leadership has played an important role in making EDS into such a successful Society. His achievements are numerous. As is the case of many EDS volunteers, he started as a member of a technical committee for the EDS flagship meeting of the year, namely the IEDM. He assumed the positions of the Technical and the General Chair in the 1981-1983 time frame. During this period he was instrumental in establishing the popular Sunday tutorials and the Tuesday night panel sessions. Subsequently, he became the EDS Meetings Chair from 1985 to 1992 and then EDS President from 1992 to1994. As President, Dr. Adler led a successful effort to increase the global outreach of the Society with the most significant accomplishment being the growth in the number of chapters in Region 8 from eight in 1992 to almost thirty-five in 1995. These activities have also expanded into Regions 9 and 10. He initiated a series of chapter chair meetings, which have served as a forum for the exchange of information between the chapters, the Regions, and EDS. There is no doubt that Mike's efforts have resulted in EDS becoming a truly global society.
Mike Adler has extended his outstanding technical and leadership talent by assuming IEEE positions. He was elected Division I Director in 1999. He utilized his EDS experience in this position by leading the Division I Societies into more global activities. All the Chapters of the Division I Societies now meet annually to share ideas. The last meeting attracted 80 people, from all over the globe. In 1999, he became the first elected Vice President of the IEEE Technical Activities Board, with oversight of the 40 Societies and Councils. In 2000, he was the Vice President of IEEE Publication Activities, an extremely important responsibility. IEEE is the largest publisher of electrical and electronic engineering and related fields, with over 100 journals and magazines. I expect Mike will have a major influence on improving the effectiveness of IEEE serving its members.
Dr. Adler received his BS and PhD degrees from MIT. His PhD studies were in solid-state physics. He then joined the Research and Development Center of General Electric in Schenectady, NY and retired in 2000, when he managed the Control Systems and Electronic Technologies Laboratory. In this position, he directed the work of about 150 engineers and scientists. Presently, Mike is VP of Technology at Mechanical Technologies where he is involved in the investigation of opportunities in renewable energy. He is also a Research Professor at RPI, investigating advanced power devices and associated electronics. His honors include being elected to Fellow of the IEEE in 1987 for his contributions to the CAD of Power Semiconductor Devices.
Dr. Adler continues to live in Schenectady. NY, but he also spends considerable time at his other homes in Schroon Lake, NY and Jackson, WY. His wife Virginia and son Jerry are the joys of his life. He is a passionate sailor, skier, and hiker. His other interests include coin collecting and astronomy.
I have worked with Mike on EDS and IEEE activities for over 20 years. He is a delightful person. His technical, leadership and human interaction skills are outstanding. His impact on EDS and the IEEE has been impressive. Indeed, he is the kind of person that I would like to have living next door to me.
I would be remiss in this write-up if I did not encourage the readers of this article to become volunteers in EDS's activities. There are numerous opportunities for you to work on a global, local or at the EDS level. The success of this outstanding society is dependent on the leadership and activities of its volunteers. Don't hesitate to contact Bill Van Der Vort, the EDS Executive Director on w.vandervort@ieee.org. I am sure that he will find a rewarding opportunity for you.
Alfred U. Mac Rae
Mac Rae Technologies
Berkeley Heights, NJ
On December 10, 2000, at the IEDM held in San Francisco, CA, the ED/SSC Yugoslavia Chapter received the EDS Chapter of the Year Award which included a certificate and check for $1,000. The Chapter was founded at the end of 1994, and since its start, the number of regular members has increased from 15 to 45. Student membership has also grown, with the current number of members being 16. The increase in membership would have been even more impressive, if there had not been a significant ongoing flow of graduated electrical engineers to developed countries.Since 1994, the Chapter has been steadily increasing its level of activity which has had a significant impact on related communities in Yugoslavia. During the past year, the Chapter has organized the International Conference on Microelectronics (MIEL), held an annual administrative meeting and three regular meetings (with Distinguished Lecturer presentations, invited lectures, and video tape presentations), and organized a session on Microelectronics and Optoelectronics at the national conference, ETRAN. The Chapter coordinates a very active STAR Program with six major events being held last year (plant tours, museum visits, picnics, and other social events). Also, the Chapter is very active in helping and participating in the activities of the ED/SSC University of Nis Student Branch Chapter, which has held 5 major events during last year.
Hiroshi Iwai
Tokyo Institute of Technology, Yokohama, Japan
As of January 1, 2001, there has been a restructuring of the Regions/Chapters Committee (RCC) and a planned rejuvenation of the Chapter Partners Program, while the Region Champions Program has been terminated. As part of the restructuring, there have been five new Subcommittees for Regions and Chapters (SRCs) formed as follows:
| Subcommittee | Corresponding Region | Chair/Vice-Chair |
| North America East (NAE) | Regions 1 – 3, & 7 | A. Y. Shibib (Chair), A. A. Santos (Vice-Chair) |
| North America West (NAW) | Regions 4 – 6 | P.K.L. Yu (Chair), S.Tyagi (Vice-Chair) |
| Europe, Africa & Middle East (EAM) | Regions 8 | M.L. Ostling (Chair), M.D. Profirescu (Vice-Chair), N.D. Stojadinovic (Vice-Chair) |
| Latin America (LA) | Regions 9 | M. Estrada Del Cueto (Chair), F.J Garcia Sanchez (Vice-Chair) |
| Asia and Pacific (AP) | Regions 10 | K. Lee (Chair), J. Vasi (Vice-Chair) |
The role of each subcommittee is to help support chapter activities by discussing with the chapters the most appropriate partners to be assigned to each respective chapter and organizing to have the partners and distinguished lecturers visit the chapters. It is expected that this new structure will form closer relations between EDS and its chapters.
Hiroshi Iwai
Tokyo Institute of Technology
Yokohama, Japan
D. Stewart Peck
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D. Stewart Peck |
Stewart Peck was born on October 19, 1918, in Grand Rapids, MI, the son of Arthur and Ruby Peck. Mr. Peck received his BSEE and MSEE degrees from the University of Michigan in 1939 and 1940. He began his career at General Electric Company. In 1947 he joined the Bell Telephone Laboratories, Allentown, PA. He retired from Bell Labs in 1980.
Mr. Peck died on January 9, 2001, in Chelsea, MI. Services were held on January 13th in Chelsea. Donations are being received at the Ann Arbor Hospice, 2366 Oak Valley Drive, Ann Arbor, MI 48103.
Mr. Peck became the Department Head in charge of the semiconductor reliability group when it was formed in 1958. His leadership promoted the active use of accelerated testing, including 24-hour life acceptance tests at 280 ¡C.
This activity promoted the use of accelerated stress by vendors, through the purchase specifications. For accurate evaluation, he prepared nomographs and graph papers to facilitate the use of the lognormal life distribution and the Arrhenius relationship for accelerated temperature.
The new procedures, based on the lognormal distribution, were used on all Bell System devices, providing confidence in the techniques. They have been used in all mechanisms found, such as ionic contamination, chemical and electrolytic corrosions, electromigration, and oxide breakdown. He has taught this topic to hundreds of engineers worldwide for over 20 years.
Mr. Peck has been active in the IEEE. He was a member of the Board of Directors of the International Reliability Physics Symposium (IRPS) representing the Reliability Society, and was General Chairman of the 1972 IRPS.
In 1979, Mr. Peck received an Award from the IRPS, "In recognition of his pioneering efforts in the field of Reliability Physics and on behalf of this Symposium."
Mr. Peck is a Life Fellow of the IEEE. He was an associate of Technology Associates, 1978-99. He is an author of many papers and the Accelerated Testing Handbook (Editions: 1978, 1987, & 1991).
His children, Donald Peck and Priscilla Peck Dunn, three grandchildren, and two great-grandchildren survive him.
Keats A. Pullen, Jr. ED, PE
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Keats A. Pullen, Jr. |
Dr. Keats A. Pullen, 84, a renowned scholar, died of shock trauma as the result of a fall. Dr. Pullen was born in Onawa, IA, in November 1916. He attended schools in Los Gatos, CA, followed by a B.S. in physics from the California Institute of Technology, Pasadena, CA, in 1939. He received his Doctorate in Engineering from Johns Hopkins University in 1946 and became a licensed professional engineer in Maryland in 1948.
Dr. Pullen started working at the Ballistics Research Laboratory (BRL), Aberdeen Proving Ground, MD, in June 1946, where he remained until 1978. He transferred from BRL to the U.S. Army Material Systems Analysis Activity (AMSAA) in 1978, and worked until his retirement from the Army in 1990.
While working at BRL and AMSAA, Dr. Pullen designed and evaluated designs for a wide range of electronic systems for military use, such as DOVAP, DORAN, EMA, a drone program, satellite systems, Havename, and many other systems.
During his years working at Aberdeen Proving Grounds, he was also on the faculty of several universities where he taught college courses in engineering. These included the Pratt Institute, University of Delaware, and Drexel University.
Dr. Pullen was a Life Fellow of the Institute of Electrical and Electronics Engineers, President of the Aberdeen Chapter of Armed Forces Communications and Electronics Association, member of ADPA, AUSA, Association of Old Crows, and Sigma Xi. In 1982, he received the Marconi Memorial Medal from the Veteran Wireless Operators Association.
During his lifetime, Dr. Pullen published nine books, more than 25 reports, and many more papers and letters. He also was the holder of six patents. He was active in developing improved communication systems for the Special Operations Forces, Airland Battle 2000, and developing improvements for grounding for the Army to protect the ever-increasingly more delicate systems that support the U.S. Military.
Dr. Pullen is survived by his wife, Dr. Phyllis K. Pullen, four sons, Peter, Paul, Keats III, Andrew, his daughter Victoria Leonard, and seven grandchildren.
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Rebecca J. Welty |
The University of California at San Diego ED/LEO Student Chapter was founded in April 2000. The Chapter is organized as follows: Chapter Chair Rebecca Welty, Vice-Chair Yimin Kang, Treasurer, Masaya Iwamoto, and Secretary, Jessica Fischer; our Advisor is Prof. Paul Yu. A joint Electron Devices and Lasers and Electro-Optics Chapter was chosen for two main reasons: increase student participation and increase student interaction in these two very similar disciplines. Students frequently interact within their own research groups but seldom between research groups, unless they are on a joint project. In many instances we use the same software, fabrication tools, and test equipment. With increased student interaction, students will have more opportunities to learn from each other.
The Chapter's current activities include technical seminars and student recruitment. Currently we are holding quarterly technical seminars. In the summer of 2000, Prof. Dalma Novak of the University of Melborne, Australia, gave an impressive seminar where she overviewed the research activities for future optically fed millimeter-wave radio communication systems. Students had expressed an interest to have talks from companies to learn more about what companies are doing and what are the opportunities for them. In the Fall of 2000, Dr. Don D'Avanzo from Agilent Microwave Technology Center, Santa Rosa, CA, USA, gave a seminar on GaAs HBT and HEMT technologies for Agilent instruments. Interested students also had the opportunity to meet with Dr. D'Avanzo to talk about employment opportunities at Agilent, Santa Rosa. These two seminars were very successful. Approximately 50 people attended each of the seminars.
In the Fall of 2000, we had a recruitment drive where we discussed the advantages of becoming involved in an IEEE professional society: keeping up to date with research by reading Letters and Transactions, keeping up to date with Society Newsletters where readers can find the most up to date conference listings, and most importantly, to have a forum to network with researchers both at UCSD and from other institutions. Our chapter started with 12 student members and at the membership drive we had 16 IEEE EDS or LEOs members and 12 non-members participate. To date, about 50% of the non-members have joined either ED or LEO societies, most of them enrolling via the webpage. Currently, all of the student members are Graduate Students in Electrical Engineering (EE). Further work will be done to recruit undergraduate students in EE and students from other departments.
The Chapter is currently planning outreach programs for the Winter 2001 quarter with the Preuss School. The Preuss School opened in 1998 as a college preparatory school on the UCSD campus. The School currently holds sixth through ninth grade with 419 students and will add one grade each year until twelfth grade is filled. The target enrollment of 700 will be achieved in 2004. Students come from low-income families and are chosen from a lottery once they pass the initial screening. The goal of this school is to have each student be the first in their family to attend college. A subset of the UCSD ED/LEO Student Chapter will participate with the Preuss School. Members of the Chapter will mentor them in a robotics competition, "botball". In this game students design, build, and program their robot to score points by placing balls in specified positions. Students will gain experience in programming, engineering, and teamwork. After the competition there will be another meeting with the group of students to discuss the engineering field and opportunities there are in the field, hold lab tours, and view some of the videotapes that are available from the EDS Videotape Lending Library, which are targeted for the STAR program.
The Chapter is also planning activities for 2001. We will continue to have quarterly seminars and hold recruitment drives. The Chapter plans to take advantage of the Distinguished Lecturer (DL) program, and is anticipating having at least one DL come to UCSD in 2001. We also plan to have some of our technical seminars include the IEDM short course videotapes, which are available from the EDS Videotape Lending Library.
I had the pleasure of attending the EDS Adcom Meeting and EDS Regions 1-7 & 9 Chapters Meeting in San Francisco, CA, USA, on December 10, 2000. I found the Chapters Meeting to be particularly useful in hearing other Chapters activities and also talking to other Chapter Chairs about similar problems in their Chapters, such as getting students involved when free time seems to be such a scarce commodity. In my very short experience with the Student Chapter I have already found it to be a rewarding experience and hope many more people will find the time and opportunity to get involved.
If you have any suggestions or would like any other information about our Chapter please contact me at rwelty@ece.ucsd.edu .
Rebecca J. Welty
University of California, San Diego
San Diego, CA
At its 10 December 2000 Meeting, the EDS AdCom approved changes to the EDS Constitution and Bylaws. A summary of these changes is indicated below. The complete Constitution and Bylaws may be obtained from the EDS Executive Office.
Article V/Section 9
Change the voting rights of Technical Committee Chairs from ex-officio members without
vote to ex-officio members with vote.
Section 7/Executive Office
Change the title of IEEE Staff Director for Technical Activities to IEEE Managing
Director for Technical Activities as implemented by IEEE in May 1995.
Section 12.1/Technical Committees
Change the terms of the members of technical committees from one-year renewable terms
to two-year renewable terms as approved by AdCom in October 1999. Furthermore, change the
renewable number of terms for chairs from one to an unlimited number.
Section 13/Standing Committees
Change the terms of the members of standing committees from one-year renewable terms
to two-year renewable terms as approved by AdCom in October 1999.
Section 13.2 (Part C)/Meetings Committee
Delete the part of section 13.2 (Part C) which states that the DRC chair will be an
ex-officio member of the EDS AdCom without vote and a member of the Meetings Committee, as
per both the AdCom vote in 1997 to eliminate Meeting Liaison positions and the
reorganization of the Meetings Committee in 1999.
Section 13.3/Sections/Chapters Committee
Change the name of the Sections/Chapters Committee to the Regions/Chapters Committee
as per the restructuring of the Chapters Committee in 1996.
Section 13.9/ International Technical Activities Committee
Delete section 13.9 as the committee was eliminated as per the restructuring of the
Chapters Committee in 1996.
Steven J. Hillenius
Agere Systems
Murray Hill, NJ
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From left: Badariah Bais, Farizah Saharil, Prof Hiroshi Iwai, prof. Burhanuddin Yeop Majlis, Rahman, Dr. Sahbudin Shaari, Ibrahim Ahmad and Dr. Bambang Sunaryo Suparjo. |
The ED Malaysia Chapter Meeting was held in Guoman Port Dickson on November 12, 2000, in conjunction with the 2000 IEEE International Conference on Semiconductor Electronics. The purpose of the meeting was to better understand EDS operations and to discuss how EDS could help the Malaysia Chapter. Professor Burhanuddin Yeop Majlis the Chapter Chairman, Dr. Sahbudin Shaari, Technical Program Chairman, Mr. Ibrahim Ahmad, the Treasurer, Mrs. Badariah Bais, the Secretary, Mr. Rahman Wagiran, Mr. Bambang Sunaryo Suparjo, Farizah Saharil, and Hiroshi Iwai attended the meeting. The meeting began with an overview of EDS given by Professor Iwai followed by a summary of the Malaysia Chapters activities by the Chairman of the ED Malaysia Chapter, Professor Burhanuddin Yeop Majlis. There are two main activities organized by the ED Malaysia Chapter every year: on the odd years it is the National Symposium on Microelectronics (NSM) and on the even years it is the International Conference on Semiconductor Electronics (ICSE). For the year 2000, the ED Malaysia Chapter took advantage of the EDS Video Tape Lending Library Program, by showing the two IEDM video short courses, MBE and MOCVD: New Structures and Devices and Advance Device Characterization and Test Methodologies. Both short courses were held at the Faculty of Engineering, Universiti Kebangsaan Malaysia and attended by more than 24 participants. The ICSE 2000 attracted 82 participants and 52 paper presenters.Three main program issues highlighted in the meeting were the distinguished lecturer program, the EDS subsidy, and IEEE membership. There are not a sufficient number of distinguished lecturers in the Asian region who can visit Malaysia. Iwai told of his plan to increase the number of lecturers in the Asian countries. The Malaysia Chapter proposed to Professor Iwai that the annual EDS subsidy be increased to US $2000, especially to a chapter which has proven active in running a conference. With a membership promotion, it is difficult to attract an engineer to become an IEEE member due to the high membership fees. The reduction of the fees for electronic subscription should be seriously considered for Asian countries with low average incomes. These items were reported and discussed at the Regions/Chapters Committee Meeting held this past December in San Francisco.
Hiroshi Iwai
Tokyo Institute of Technology
Yokohama, Japan
Burhanuddin Yeop Majlis
University Kebangscan Malaysia
Selangor, Malaysia
The Electron Devices Society held its 5th Annual Regions 1-7 & 9 (US, Canada & Latin America) Chapters Meeting on Sunday, December 10, 2000, in conjunction with the International Electron Devices Meeting (IEDM) in San Francisco, CA. This meeting provides a forum for EDS chapter chairs to meet one another as well as the IEEE staff and EDS AdCom members. It is an opportunity for the chapters to share their experiences and practices, as well as express their needs and concerns to the AdCom members. This year's meeting was co-hosted by Hiroshi Iwai, EDS Regions/Chapters Committee Chair, and Paul Yu, EDS AdCom elected member. Fifty-six representatives from 21 chapters attended.
After the opening remarks, Hiroshi Iwai announced the new Subcommittees of Regions/Chapters Committee (SRC) and their goals. Emily Sopensky, the EDS Short Course Manager, then gave an overview of the EDS Short Course Program, followed by James Kuo's presentation about the new Senior Member and new Membership Fee Subsidy programs. Arlene Santos gave a brief presentation informing meeting attendees of all the chapter resources available on the web at http://www.ieee.org/organizations/society/eds/chapter.html. The ED/SSC Yugoslavia EDS Chapter of the Year was announced and the Chapter Chair, Ninoslav Stojadinovic, gave a detailed account of the chapter activities. A series of chapter reports was then given: ED/LEO University of California, San Diego Student Branch Chapter by Rebecca Welty, C/ED Maine Chapter by David Potts, CAS/ED/CPMT/LEO Toronto Chapter by Ted Sargent, and ED CINVESTAV-IPN Student Branch Chapter by Jose Luis Dominguez.
After the chapter reports, Paul Yu moderated an open discussion among the participants. The discussion centered on how to support and promote chapter activities. Although the attendees expressed that they were very pleased with the EDS Videotape Lending Library, it was mentioned that it would be good if some additional materials were made available, e.g. the newly established videos from the EDS Independent Short Courses Program. The Distinguished Lecturer Program (DL), though popular, is not being utilized by a significant number of chapters, especially those located in regions that have fewer DLs. It was recommended that chapters physically located near each other make joint arrangements for a DL to present talks and also to take advantage of the DL travel funding available. It was commented that the DLs should request the society overview presentation currently available from the EDS Executive Office, so that during their chapter visits, they can brief the chapter about the Society and its various benefits to the members.
To enhance chapter meeting attendance, it was suggested that joint activities with other chapters or societies should be encouraged which will also serve as a networking opportunity for members. The general consensus among the attendees was that the selection of the topic of the lecture was vital to the meeting attendance. Current topics such as devices related to wireless and fiber optics communications can attract a large audience. Realizing that membership growth is closely linked to student membership development, there were many suggestions made to attract new students to join IEEE and attend student chapter meetings and to encourage non-student members to come to their respective chapter meetings as well. The suggested ideas included giving students academic credit for attending DL lectures, inviting DLs to act as guest lecturers for scheduled seminars, and setting chapter meeting times to be convenient for local members.
Hiroshi Iwai
Tokyo Institute of Technology
Yokohama, Japan
Paul K.L. Yu
University of California
San Diego, CA
| Barry R. Allen | Arturo A. Ayon | Henry Baltes | Mohammed M. Banat |
| Patricia Beck | Romuald B. Beck | Kristin M. de Meyer | Numan Sadi Dogan |
| Monuko M. du Plessis | Klaus Frank | Minka D. Gospodinova-Daltchena | Cynthia M. Hanson |
| Todd Hiemer | Richard Hornsey | James Irvine | * Kinam Kim |
| Can E. Korman | Byoungho Lee | Chewee Liu | Chun Ting Liu |
| Jan M. Lysko | Chris A. Mack | Karen E. Moore | Tadahiro Ohmi |
| Willem J. Perold | Yuri Poplavko | James A. Power | Elyse Rosenbaum |
| Jerzy Ruzyllo | Peter Sandborn | Jong-in Song | Zoran Stamenkovic |
| Oleg V. Stoukatch | Pieter L. Swart | Kazuo Yano | Isao Yoshida |
| * = Individual designated EDS as nominating entity | |||
| If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade of membership for which an individual can apply. New Senior members receive a wood and bronze plaque and a credit certificate for up to US $25 for a new IEEE society membership. In addition upon request, a letter will be sent to employers, recognizing the new status. For more information on senior member status, visit http://www.ieee.org/membership/gradescats.html#SENIORMEM . To apply for senior member status, fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm . | |||