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2001 EDS Distinguished Service Award
The IEEE Electron Devices Society is extremely
proud of the services that it provides to its members. Its members
generate the premier new developments in the field of electron
devices and share these results with their peers and the world
at large by publishing their papers in EDS journals and presenting
results in its meetings. This is a global activity that is effective
because of the efforts of numerous volunteers. Many of these volunteers
labor in relative obscurity, with their only reward being the
satisfaction that they receive in being an important part of a
successful organization, namely of the Electron Devices Society.
They should be thanked. The Electron Devices Society Distinguished
Service Award was established to honor an outstanding volunteer
each year. It is a challenge to select just one outstanding volunteer
each year. There are numerous outstanding volunteers in EDS and
it is a shame that they can’t all be given significant recognition.
In 2001, we are pleased to single out one of those volunteers
for his contributions. We honor H. Craig Casey, Jr. as the recipient
of this award. Craig Casey was born in 1934 in Houston, Texas.
He received a BS degree in electrical engineering in 1957 from
Oklahoma State University and joined Hewlett-Packard in Palo Alto,
California. While at H-P, he attended Stanford University as a
half-time graduate student. During this time at H-P he joined
HPÕs new semiconductor division, HP Associates. In 1962,
he left H-P to complete his PhD in electrical engineering at Stanford
University. Upon completion of his PhD in 1964, Craig
joined Bell Telephone Laboratories in Murray Hill, New Jersey.
His initial assignment was the investigation of electroluminescence
in GaAs p-n junction diodes. During this time, he began to collaborate
with Mort Panish on the impurity incorporation and diffusion in
GaAs. In 1972, the collaborations with Panish began to include
properties that influence the behavior of GaAs-AlGaAs heterostructure
lasers such as the compositional dependence of the energy gap
of AlGaAs and the refractive indices. With Panish, semiconductor
laser improvements such as the reduction of the threshold current
density by adding layers to have separate optical and carrier
confinement with the separate confinement heterostructure (SCH)
laser were made. With Sasson Somekh and Mark Ilegems in 1975,
the SCH laser was used with a grating in the optical waveguided
region to obtain room temperature operation in a distributed-feedback
(DFB) laser. He became an IEEE Fellow in 1984 for contributions
to III-V compound semiconductors. In 1979, Dr. Casey joined the
Electrical Engineering Department at Duke University as Professor
and Chairman. In 1996, he turned the Chairman duties over to his
successor and became a full-time teacher and began research in
the recently developed wide-energy gap group-III nitrides. Craig became involved with the Electron Devices
Society as a member of the Device Research Conference Program
Committee in 1975 and served as Conference Chairman in 1983. He
became an elected AdCom member in 1981 and served as President
in 1988-1989. Since that time, he has been involved in a variety
of EDS activities. Craig has found North Carolina to be a great
East Coast location. There are many activities in the Durham-Raleigh-Chapel
Hill area during the school year. In the summer, Craig and his
wife Jackie go to their house in the North Carolina mountains
near Blowing Rock. Blowing Rock is like Andy GriffithÕs
Mayberry, but with great restaurants, summer theater, concerts,
and a variety of outdoor activities. With the internet, call forwarding,
and express mail, telecommuting from the mountains works during
the summer break. Also, it is actually cool in these southern
mountains in the summer. They look forward to the time when they
can also be there for the fall leaf season. W. Dexter Johnston,
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