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30 EDS Members Elected to the IEEE Grade of Fellow Effective 1 January 2002
Vasudev Kalkunte Aatre,
Defense R&D Organization, Government of India, New Delhi,
India, For leadership in research and development for strategic
electronics and defense systems Narain Das Arora,
Simplex Solutions, Inc., Sunnyvale, CA, USA, For contributions
to the development of MOSFET compact models for circuit simulation Keh-Yung Cheng,
University of Illinois at Urbana Champaign, Urbana, IL, USA, For
contributions to semiconductor heterostructure materials and devices
using molecular beam epitaxy Bijan Davari,
IBM, Hopewell Junction, NY, USA, For contributions to high performance
deep-submicron CMOS technology development Nico De Rooij,
University of Neuchatel, Neuchatel, Switzerland, For contributions
to microelectrical/mechanical systems and technology transfer
to the marketplace Toshio Goto,
Nagoya University, Aichi, Japan, For contributions to plasma processing,
gaseous electronics and lasers James W. Haslett,
University of Calgary, Calgary, Canada, For contributions to high
temperature instrumentation and noise in solid-state electronics Allen Ray Hefner,
National Inst. of Standards and Tech., Gaithersburg, MD, USA,
For contributions to the theory and modeling of power semiconductor
devices Chang-Gyu Hwang,
Samsung Electronics Co., Ltd., Yongin, Korea, For contributions
to, and leadership in, device and process technologies for high
density memories Chennupati Jagadish,
Australian National University, Canberra, Australia, For contributions
to III-V compound semiconductor optoelectronic device integration Ralph Boyd James,
Brookhaven National Laboratory, Upton, NY, USA, For contributions
to and leadership in the development of wide band-gap compound
semiconductor devices used for detecting and imaging X- and gamma-ray
radiation Allan Hugh Johnston,
Glendale, CA, USA, For contributions to the understanding of space
radiation effects in optoelectronics Rajiv V. Joshi,
IBM Research Division, Yorktown Heights, NY, USA, For contributions
to chip metallurgy materials and processes, and high performance
processor and circuit design Jack C. Lee,
The University of Texas at Austin, Austin, TX, USA, For contributions
to the understanding and development of ultra-thin dielectrics
and their application to silicon devices Si-Chen Lee,
National Taiwan University, Taipei, Taiwan, For contributions
to heterojunction bipolar transistor technology in low noise and
high gain applications Neville Clinton Luhmann,
University of California, Davis, CA, USA, For advances in millimeter/submillimeter
wave plasma diagnostics, intense microwave plasma interactions,
and coherent radiation generation Leda M. Lunardi,
JDS Uniphase Corp., Freehold, NJ, USA, For contributions to the
development of high-performance 1.55 um monolithically integrated
photoreceiver for optical communication Akira Matsuzawa,
Matsushita Electric Industrial Co., Ltd., Osaka, Japan,For contributions
to high-speed A/D converters and mixed-signal integrated circuits Ulrich Lothar Rohde,
Synergy Microwave Corp., Paterson, NJ, USA, For contributions
to and leadership in the development and industrial implementation
of microwave computer-aided design technology Tadashi Saitoh,
Tokyo University of Agriculture & Technology, Tokyo, Japan,
For contributions to development of crystalline silicon solar
cells and materials for photovoltaic applications Naoyuki Shigyo,
Toshiba Corporation, Semiconductor Company, Yokohama, Japan, For
contributions to the development of technology-oriented computer-aided
design of semiconductor devices Rajendra Singh,
Clemson University, Clemson, SC, USA, For contributions to and
technical leadership in the materials processing and manufacturing
of semiconductor devices Albert J.P. Theuwissen,
Philips Semiconductors, Eindhoven, Netherlands, For contributions
to the development of CCD image sensors for still photography
and HDTV applications Tseung-Yuen Tseng,
National Chiao Tung University, Hsinchu, Taiwan, For contributions
to ceramic capacitor and sensor technologies Toshiaki Tsuchiya,
Shimane University, Shimane, Japan, For contributions to the understanding
of the reliability physics of MOS devices and the development
of hot-carrier-immune CMOS technologies Charles Wuching Tu,
University of California, San Diego, La Jolla, CA, USA, For contributions
to molecular beam epitaxy of novel III-V semiconductors Jan Van der Spiegel,
University of Pennsylvania, Philadelphia, PA, USA, For contributions
in biologically motivated sensors and information processing systems Ming C. Wu,
University of California, Los Angeles, CA, USA, For contributions
to optical micro-electro-mechanical systems and high speed optoelectronics Toshiaki Yachi,
NTT Telecommunication Energy Laboratories, Tokyo, Japan, For contributions
to power semiconductor and micro-magnetic devices The Nominations of the Following IEEE
Members Were Evaluated by EDS But the individuals are Not Current
Members of EDS Austin Michael Andrews,
II, Alexandria, VA, USA, For technical leadership of government
research and development programs Joachim N. Burghartz,
Zoetermeer, The Netherlands, For contributions to integrated high-speed
and radio-frequency silicon devices and components Paul Siu-Chung Ho,
The University of Texas at Austin, Austin, TX, USA, For contributions
to metalization of and metrology for multilevel interconnects
and electronic packaging Nicholas Reinhardt,
Lexington, MA, USA, For contributions to hydrogen thyratrons,
high voltage pulse power, high voltage transmission and distribution Larry F. Weber, Plasmaco, Inc., Highland, NY, USA, For contributions to plasma display technology |