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EDS
Members Named Winners of the
Six EDS Members were among the winners of
the 2002 IEEE Technical Field Awards. They are:
Dimitri A. Antoniadis,
of MIT won the 2002 IEEE Andrew S. Grove Award. His citation states,
“For seminal contributions to field-effect devices and silicon
process modeling.” Known for his intuitive approach to complex
technologies, Dr. Dimitri A. Antoniadis has had a tremendous effect
on several areas of microelectronics technology, especially in
field-effect controlled, quantum-effect devices and silicon process
modeling. At Stanford in the mid-1970s, Dr. Antoniadis
played a key role in developing the SUPREM I and II, which became
the first widely used process simulation tools in industry and
the basis of programs in use today. After joining the faculty
of the Massachusetts Institute of Technology (MIT) in 1978, Dr.
Antoniadis led a program that proved and quantified the dual,
vacancy-interstitialcy diffusion mechanism of substitutional dopant
atoms in Si. This dual diffusion model remains at the core of
all modern process simulators. In the 1980s, Dr. Antoniadis, with his colleagues
at MIT, established a bold research program into field-effect
devices that took advantage of cutting-edge extreme sub-micron
lithography techniques. The program produced many groundbreaking
demonstrations, including those of lateral-surface superlattice
and quasi-one-dimensional channels in silicon and GaAs, and the
first silicon single-electron transistor. Working with his students, Dr. Antoniadis
has made many pioneering contributions to Bulk-Silicon and Silicon-
on-Insulator MOSFET research that had major impact on key aspects
of device design for today’s high perfomance silicon MOSFETs.
His current research focuses on the physics and technology of
extreme-submicron Si, SOI and Si/SiGe MOSFETS. He is author and
co-author of more than 200 technical aritcles. Dimitri A. Antoniadis was born on 1 January
1947, in Athens, Greece. He received his B.S. in Physics from
the National University of Athens in 1970, and his Ph.D. in Electrical
Engineering from Stanford University in 1976. In 1978, Dr. Antoniadis joined the faculty
at MIT where he co-founded and was the first Director of the MIT
Microsystems Technology Laboratories. He later directed the SRC
MIT Center of Excellence for Microsystems Technology. Currently,
he holds the Ray and Maria Stata Chair in Electrical Engineering
and directs the Multi-University Focus Research Center for Materials
Structures and Devices. Dr. Antoniadis is a Fellow of the IEEE. His
awards include the IEEE Paul Rappaport Award and the Solid State
Science and Technology Young Author Award of the Electrochemical
Society. At the IEEE, he has served as Editor of the IEEE Transactions
on Electron Devices, and on various technical committees.
Dr. Young-Kai Chen,
a Bell Laboratories research group Head, won the 2002 IEEE David
Sarnoff Award. His citation states, “For contributions to
ultrahigh-speed heterostructure transistors and seminal work on
colliding pulse mode-locked semiconductor lasers.” Dr. Young-Kai Chen’s outstanding career
in semiconductor device physics, design, and technology has included
many important milestones. A pioneer of many key devices Dr. Chen and
his team demonstrated operational frequencies well beyond 100
GHz in InP-based heterojunction bipolar-based transistors in 1988
at Bell Laboratories. When he first introduced the technology,
it paved the way for intense research worldwide. Since then, the
work’s importance has endured: It remains the basis for high-speed
commercial technology today. Another of Dr. Chen’s revolutionary contributions
to ultrafast semiconductor devices involves a groundbreaking colliding
pulse mode-locked semiconductor laser, which generates 600 femto-second
pulses at a 350 GHz repitition rate. His work in this area, along
with Dr. Ming Wu, set the standard by which subsequent developments
have been judged. It is now in use in many high-speed communications
systems, including optical clock regenerators and phase-locked
wavelength division light sources, and numerous other wireless
applications. Young-Kai Chen was born on 7 October 1953,
in Taipei, Taiwan. He received a B.A. in Electrical Engineering
from the National Chiao Tung University in Taiwan, an M.A. from
Syracuse University, and a Ph.D. from Cornell University. Dr. Chen joined the technical staff of General
Electric in 1980, before starting research at Cornell University
in 1985. Upon earning his Ph.D. in 1988, he joined the staff of
Bell Laboratories in Murray Hill, where he became Director of
the High Speed Electronics Research Department in 1994. He currently
heads a Bell Laboratories research group that explores high-speed
electronics and optoelectronics for advanced optic-fiber communication
networks. A Fellow of the IEEE, Dr. Chen holds 10 patents
and has contributed to more than 100 papers. The many honors he
has earned include the Young Scientist Award at International
GaAs Symposium. He has been a Member of Technical Program Committees
at many IEEE conferences and meetings, and has organized IEDM
courses. He has also chaired or advised numerous conferences and
organizations, including those of the NSF and NIST.
Supriyo Datta,
a member of the faculty at Purdue University, won the 2002 IEEE
Cledo Brunetti Award. His citation states, “For significant
contributions to the understanding and innovative simulation of
nano-scale electronic devices.” Supriyo Datta has long been a leading figure
in the modeling and understanding of nano-scale electronic conduction.
His work has vastly expanded the knowledge and technology of nanoelectronics. Since 1981, Dr. Datta has been a member of
the faculty at Purdue University where he is currently the Thomas
Duncan Distinguished Professor of Electrical and Computer Engineering.
He began his work in nano-scale electronics in 1985 and his early
work with his students Micahel McLennan, Roger Lake and Gerhard
Klimeck, laid the foundation for the development of quantum-transport
simulation tools based on the non-equilibrium Green’s function
(NEGF) formalism. Dr. Datta then went on to pioneer the application
of the NEGF formalism to molecular electronic devices. In a joint effort with Mark Lundstrom, Dr.
Datta has pioneered new models for electronic-flow simulation
in ultra-small devices and, in doing so, has greatly expanded
the world’s understanding of nano-scale electronic flow.
Using the NEGF formalism and a unique “scattering model,”
Drs. Datta and Lundstrom have revolutionized the methods for simulation
and prediction of ultra-small scale electronics by developing
approaches that apply to conventional transistors at the scaling
limit, as well as to radically new technologies. Dr. Datta is
well-known for his seminal contributions to emerging fields such
as spintronics and molecular electronics. Supriyo Datta was born 2 February 1954, in
Dibrugarh, India. He was awarded a B.Tech. in Electronics from
the Indian Institute of Technology, with the President of India
Gold Medal, in 1975. He received an M.S. in Electrical Engineering
in 1977, and a Ph.D. in Electrical Engineering in 1979, both from
the University of Illinois at Urbana-Champaign. Dr. Datta has authored three books, including
the lauded Electronic Transport in Mesoscopic Systems, and numerous
articles and papers on nano-scale electronic conduction. He is
a Fellow of the IEEE, the American Physical Society, and the Institute
of Physics. Dr. Datta has received many awards and honors for
his work, including the IEEE Centennial Key to the Future, the
National Science Foundation Presidential Young Investigator Award,
the D.D. Ewing Teaching Award from the Purdue University School
of Engineering, and the Frederick Emmons Terman Award of the American
Society of Engineering Education.
Chenming Hu,
Chief Technology Officer of TSMC in Taiwan. won the 2002 IEEE
Solid-State Circuits. His citation states, “For contributions
to MOSFET physics and development of the BSIM model for CMOS circuit
simulation.” Working with Professor PingKo, Professor Chenming
Hu contributed to key physical models for nearly all features
of the electrical behavior of modern MOSFETs. The duo’s leadership
also led to the Berkeley Short-Channel IGFET Models (BSIM), which
resulted in a groundbreaking device model that became an industry
standard while remaining entirely in the public domain. The BSIM1 and BSIM2 models were widely used
for IC design. The BSIM3 model incorporates numerous novel physical
elements, and broke new ground in accuracy, ease of parameter
extraction, and the ability to predict how MOSFET characteristics
would change with variations in manufacturing parameters. Subsequent
updates and releases include an important thermal noise model,
models for RF circuit design for the wireless industry, and a
model for SOI product design. Chenming Hu was born on 12 July 1947, in Beijing,
China. He earned a B.S. from the National Taiwan University, and
M.S. and Ph.D. degrees from the University of California at Berkeley.
He joined the faculty of Berkeley in 1976,
where he is a TSMC Distinguished Professor of Electrical Engineering
and Computer Sciences. He is currently on leave from Berkeley
and is the Chief Technology Officer of TSMC in Taiwan. Professor Hu is involved in a number of professional
activities, and has been a key organizer, speaker, or committee
member for numerous IEEE conferences and activities. He has been
involved in developing numerous standards, and created some tutorials
and University of California Extension courses that have reached
thousands of engineers. Professor Hu has authored or co-authored
more than 700 papers and five books. Professor Hu is a Fellow
of the IEEE and the Institute of Physics as well as a member of
the National Academy of Engineering. The many awards he has won
include the IEEE’s Jack A. Morton Award, Berkeley’s
Distinguished Teaching Award, Sigma Xi’s Monie A. Ferst Award,
the Pan Wen Yuan Foundation Award, and a DARPA Most Significant
Technological Accomplishment Award.
Ping-Keung Ko,
a Vice Chairman and Chief Strategy Officer of Authosis Inc., won
the 2002 IEEE Solid-State Circuits Award. His citation states,
“For contributions to MOSFET physics and development of the
BSIM model for CMOS circuit simulation.” Practically every silicon foundry, integrated
device manufacturer, and fabless company benefits from the work
of Professor Ping-Keung Ko. Working with Professor Chenming Hu, Professor
Ko helped to pioneer key physical models for nearly all features
of the electrical behavior of modern MOSFETs. The duo’s leadership
also led to the Berkeley Short-Channel IGFET Models (BSIM), which
resulted in a groundbreaking device model that was an instant
industry standard while remaining entirely in the public domain.
The BSIM1 and BSIM2 models were widely used
for IC design. The BSIM3 model incorporates numerous novel physical
elements, and broke new ground in accuracy, ease of parameter
extraction, and the ability to predict how MOSFET characteristics
would change with variations in design and manufacturing. Subsequent
updates and releases include an important thermal noise model,
models for RF circuit design for the wireless industry, and a
widely used model for SOI product design. A native of Hong Kong, Professor Ping-Keung
Ko earned his B.S. with special honors from Hong Kong University
in 1974, and M.S. and Ph.D. degrees in Electrical Engineering
and Computer Science (EECS) from the University of California
at Berkeley, in 1978 and 1982, respectively. In 1982, Professor Ko joined Bell Labs as
a Member of the Technical Staff. He joined the Berkeley faculty
in 1984, and was Vice Chairman of the EECS department and Director
of the Berkeley Microfabrication Laboratory before returning to
Hong Kong University of Science and Technology (HKUST) in August
1993, where he served as Dean of Engineering from 1994 to 2000.
In Hong Kong, he has also been chairman of the Research Grants
Council, a member of the University Grants Committee, a member
of the Industrial Technology Development Council, and a Justice
of Peace. He is currently on professional leave from HKUST and
is Vice Chairman and Chief Strategy Officer of Authosis Inc.,
a VC firm focuses on funding IC fabless design companies targeting
the China market. Professor Ko holds six patents and has authored
or co-authored hundreds of papers and a book. Together with Professor
Hu, he has authored about 200 papers on the physical models of
MOSFET. A Fellow of both the IEEE and the Hong Kong Institute
of Engineers, his many awards include a Best Paper Award from
the International Reliability Physics Symposium and the IBM Faculty
Development Award. He is involved in start-up ventures in Silicon
Valley and China .
Mark Lundstrom,
Professor at Purdue University, won the 2002 IEEE Cledo Brunetti
Award. His citation states, “For significant contributions
to the understanding and innovative simulation of nano-scale electronic
devices.” Dr. Mark Lundstrom’s groundbreaking effort
in the simulation of electronic flow in ultra-small devices has
revolutionized the field. His innovative work has laid the foundation
for rapid advances in the modeling and understanding of nano-scale
electronics. After joining Purdue University in 1980, Dr.
Lundstrom began research in the physics and modeling of semiconductor
devices, including work on III-V solar cells and heterojunction
devices, bandgap narrowing and minority carrier transport, computer
simulation of semiconductor devices, carrier transport theory,
and the physics of deep sub-micron MOSFETs. Working with colleagues
N.H. Kapadia and J.A.B. Fortes, Dr. Lundstrom pioneered the PUNCH
project to develop a web-based infrastructure for delivering computing
services, and co-founded Cantiga Systems, Inc., to commercialize
the PUNCH technology. In a joint effort with Supriyo Datta, Dr.
Lundstrom has pioneered new models for electronic-flow simulation
in ultra-small devices and, in doing so, has greatly expanded
the world’s understanding of nano-scale electronic flow.
Using the NEGF formalism and a unique “scattering model,”
Drs. Lundstrom and Datta have revolutionized the methods for simulation
and prediction of ultra-small scale electronics by developing
approaches that apply to conventional transistors at the scaling
limit as well as to radically new technologies such as molecular
electronics. Their work has provided practical simulation tools
that provide complete I-V characteristics as well as a conceptual
view that is useful for illuminating the complexities and limitations
of nano-scale MOSFETs. For example, their pioneering studies provided
new insights into the velocity limit at the source end of the
channel the role of carrier backscattering in a MOSFET. Mark Lundstrom was born on 8 June 1951, in
Alexandria, Minnesota. In 1973, he received a bachelor’s
degree in electrical engineering with high distinction, and in
1974, he earned an M.S. Both degrees came from the University
of Minnesota. In 1980, he was awarded a Ph.D. from Purdue University. Dr. Lundstrom is a Fellow of both the IEEE
and the American Physical Society. He has authored over 200 conference
and journal papers, along with a textbook, Fundamentals of Carrier
Transport. He has been the recipient of numerous awards and honors
for his work, including the Frederick Emmons Terman Award of the
American Society of Engineering Education, the D.D. Ewing Teaching
Award from the Purdue University School of Engineering Education,
and the Purdue University AA Potter Best of Engineering Award. Alfred U. Mac
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