2003 IEEE International Conference on Indium Phosphide and Related Materials (IPRM)
2003 IEEE International Conference on Indium Phosphide and Related Materials (IPRM) The IEEE International Conference on Indium Phosphide and Related Materials (IPRM) will be held 12-16 May 2003 in Santa Barbara, CA. IPRM will continue its tradition of highlighting a variety of important developments in InP-related materials, devices, processing and system applications. The conference venue will be at the Fess Parker Doubletree Resort just 1 mile from downtown Santa Barbara. The conference site is located on some of Southern California’s most beautiful coastline just a few steps away from a sandy beach for swimming, volleyball and sailing. Santa Ynez Mountains are just a short drive from the conference site. Also nearby are the Santa Barbara Mission, zoological gardens, museums, great shopping, and Stearns Wharf.
An important feature of this meeting will be the participation of the leading purveyors of equipment, materials, and substrates showcasing their latest products. As has been the tradition, several of the important conference events will be sponsored or hosted by these companies. A conference banquet is being organized which promises to be a unique and entertaining event that you will not want to miss! Other excursions include a wine tasting tour, a boat tour of the waters around the Santa Barbara area, and the traditional golf tournament. The following five topical areas comprise the scope of the Conference and papers:
• Optoelectronics – Sessions will highlight new levels of performance improvements in VCSEL technology. Advances in optical modulators and amplifiers, waveguide-based devices, quantum structures, photodetectors, photonic and optoelectronic integration of devices, and high-speed receivers are also solicited. New devices for optical switching, networking and signal processing are of interest as well as papers describing the properties and performance of photonic-bandgap structures for enhanced optical signal processing.
• Electron Devices – Papers are solicited that show marked improvements in HEMT, PHEMT, JFET, HFET, HBT, or RTD device and circuit performance. Topics include low-noise, low-voltage, power, and switching characteristics as well as scaling issues and the development of integration techniques employing HEMTs, HBTs, RTDs, etc. Contributions describing unique electron-device concepts based on tunneling, quantum confinement, mesoscopic, or single-electron phenomena are encouraged.
• Epitaxy – Sessions will deal with advances in growth methods, the understanding of epitaxial and heteroepitaxial growth processes, and selective-area growth. Topics related to the growth of low-dimensional structures including quantum dots are also encouraged. Papers describing growth and characterization of lattice-mismatched heteroepitaxial materials, and other InP-based and related materials, e.g. TiInGaP, GaInNaS, InGaAsSb are of interest. Epitaxy sessions will also focus on methods of monitoring, self-assembly processes, and growth-mode control.
• Processing and Materials Integration – Sessions will highlight advances in etching, lithography, metalization, dielectrics, and planarization, as will as wafer-bonding, compliant-substrates and transferred-substrate techniques. Topics include Schottky and ohmic contacts, low-damage deposition processes, passivation, and reliability issues. Papers are also solicited describing innovation in nanostructure fabrication techniques for realization of arrays of quantum wires and boxes, harmonized processing for integration of heterogeneous devices, in-situ processing, and novel selective etching methods.
• Characterization and Bulk Materials – Papers will focus on novel methods and new results on the characterization of materials (both bulk and epitaxial) and devices as well as in-situ control of processing steps with emphasis on quality control and reproducibility. Sessions will also focus on advances in bulk crystal growth technology. New characterization methods for impurity identification, improvements in homogeneity and purity in crystals, and wafer annealing are of interest.
• InP Circuits and Applications –Papers emphasizing demonstration of circuits and application using InP devices are encouraged. Application areas include fiber optic data communication circuits, mixed signal data converters, microwave and millimeter wave MMICs.
The IPRM will also offer four Short Courses:
• InP Electron Devices, Dr. Peter Asbeck, University of California at San Diego
• InP IC Fabrication, Dr. Chanh Nguyen, GCS
• InP epitaxy for Microwave Devices, Dr. Noren Pan, MicroLink
• InP optical devices - TBD
The IEEE Lasers and Electro-Optics Society (LEOS) and IEEE Electron Devices Society (EDS) are the sponsors of the conference. For additional conference program and registration information, please view our website at http://www.ieee.org/leos,http://www.ece.ucsb.edu/IPRM03/ or contact IEEE LEOS at: Tel: 732-562-3897; FAX: 732-562-8434; E-MAIL: leosconferences@ieee.org.
Joseph F. Jensen
HRL Laboratories
Malibu, CA, USA