USA, Canada and Latin America (Regions 1-6, 7 & 9)

ED Washington/Northern Virginia

- by Michael Hurt

On September 18, the Washington / Northern Virginia EDS Chapter hosted National Medal of Technology Laureate and IEEE EDS Distinguished Lecturer, Dr. Jerry Woodall. Dr. Woodall gave a lively presentation entitled “An InAs Based Transistor Approach to Terahertz Electronics: Concepts and Materials Science.” The talk took place at George Mason University in Fairfax, VA. The Chapter’s web site is http://ewh.ieee. org/r2/no_virginia/eds/.

In this talk, Dr. Woodall described InAs as an appealing candidate for low power and ultra-high speed (THz) device applications due to the material’s electronic properties including small band gap, high electron mobility, and high saturation drift velocity. Historically, InAs has not been well studied because of the lack of a suitable lattice-matched substrate or latticed-matched heterostructure to facilitate the design and fabrication of desirable transistors. Specifically, InAs substrates are “lousy” in that they are soft and have an n-type bare surface. The approach of Dr. Woodall and his research team has been to grow InAs and related alloys on GaP substrates. GaP is a key enabler being that the substrate material is very common (used for LEDs), can be semi-insulating, and acts as a high-k dielectric.

InAs on GaP is a metamorphic process (lattice matched) as opposed to pseudomorphic (strained). At the InAs/GaP interface, 90 degree edge misfit dislocations appear. These “dreidle” defects at the interface act as shallow dopants by contributing donor level states. However, without optimization of the epitaxial structure, the sheet carrier concentration and resulting mobility varies as a function of Si depth, instead of being independent of Si depth (based on electrochemical profiles of n, p doping in InAs on GaP).

Dr. Jerry M. Woodall, Eds Distinguished Lecturer

A key feature of InAs grown on GaP is the self annihilation of threading dislocations generated by the 11% lattice mismatch between InAs and GaP. This annihilation results in differential electron mobilities of 20,000 cm2/volt-sec for only 2 microns of epilayer growth, a surprising and happy result in the quest of THz devices. Simulated results of an improved epitaxial structure containing an InAs buffer layer and 0.5 um lithography predict InAs devices having ft=9.6E11 Hz and fmax=1.1E12 Hz.

Dr. Woodall is the C.Baldwin Sawyer Professor of Electrical Engineering Yale University in New Haven, Connecticut. His approach as a professor is to mesh the academic environment with business models, so that his students are able to apply traditional university research methods with practical applications in mind. The areas of interest for his research include epitaxial growth, thermochemistry, and device applications.

---

ED Mid-Hudson Valley

- by Michael Hargrove

The IEEE Mid-Hudson Valley Electron Devices Chapter has had a busy 2002 Spring term and looks forward to exciting Fall and Winter terms. Since summertime is typically a quiet time of year for the Chapter due to vacations, etc., we usually kick off the Fall term by participating in the annual barbecue/picnic sponsored by the local IEEE Section in late August.

This activity provides us with the opportunity to not only get the Chapter together, but also meet with the other local members of the IEEE who participate. It is at this meeting that we organize and plan for the upcoming year and decide what chapters are responsible for obtaining speakers and coordinating specific monthly meetings. Our ED Chapter usually sponsors two meetings and cosponsors one to two other meetings, usually in collaboration with the Computer Society Chapter. We had our barbecue/meeting on September 12th this year. At this meeting, we planned our first general public meeting for the upcoming Fall 2002. Our Chapter will be sponsoring the meeting and the present plan is to have Dr. Casimer DeCusatis of IBM Poughkeepsie speak on Fiber Optical Networks. This meeting is slated for the third week in October 2002. We look forward to hearing Dr. DeCusatis talk.

—Murty Polavarapu, Editor

---

ED/SSC Kitchener-Waterloo

- by Arokia Nathan

The newly formed ED/SSC Chapter has been very active over the last year in hosting several very interesting and well-received lectures at the University of Waterloo:

Starting Fall 2002, the ED/SSC Chapter will be co-hosting a seminar series on Giga-to-Nano Electronics, which will be held at the University of Waterloo. The series addresses new and emerging research areas in large area electronics on glass and flexible plastic substrates, and are intended for multi-disciplinary researchers, including graduate students, from the Faculties of Engineering and Science. A list of internationally renowned scientists will participate as guest speakers:

—Arokia Nathan, Editor

---

ED México

-by Rodolfo Quintero Romo

The Mexico City Electron Devices Chapter announces the “Lectures on Semiconductor Device Physics, Characterization and Simulation” to be held at the “Benemérita Universidad Autónoma de Puebla”in Puebla, Mexico, on November 14th, 2002. These lectures will include presentations by three IEEE-EDS distinguished lecturers. Professor Dieter K. Schroder, from Arizona State University, will present a talk entitled “Materials/Device Characterization Challenges”. Professor C.L. Claeys, from IMEC Leuven, Belgium, will give a presentation on “Grown-in and Process-Induced Defects in Silicon - Nucleation, Growth Kinetics and Impact on Electrical Device Properties”. Finally, Professor Ramesh K. Agarwal, from Washington University in St. Louis, USA will discuss “Computational Electromagnetics and Semiconductor-Device Simulation”. For further information, please contact Professor Rodolfo Quintero Romo rquinter@mail.cinvestav.mx from CINVESTAV-IPN, DF Mexico or visit http://www.sees.cinvestav.mx/conferencia/default.html.

---

ED South Brazil

- by J. W. Swart

The ED South Brazil Chapter was founded on December 28, 2001. The Chapter Chair, Prof. Jacobus W. Swart, attended the EDS Region 9 Chapter Meeting in Aruba, April 17, 2002. Details on the chapters present and their future activities can be found on the ED South Brazil home page http://www.ccs.unicamp.br/ieee-eds. The first important Chapter activity for South Brazil was its involvement in the 17th SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, (SBMICRO-2002), also called CHIP IN THE PAMPA, which was successfully held from 8 to 14 September 2002, at Porto Alegre, BRAZIL. The SBMicro, which is held annually in Brazil, is a forum dedicated to fabrication of integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of process, materials, characterization, modeling and TCAD of integrated circuits and MEMS. This conference was organized by the Brazilian Microelectronics Society, with technical co-sponsorship from IEEE EDS and others. About 200 participants from South America, USA, Mexico and Europe attended the conference. Prof. Cor Claeys, from IMEC Leuven, Belgium, who is the Partner of the Brazilian Chapter, attended the conference. His visit was organized with support of the EDS Distinguished Lecture Program. During his visit he gave two lectures: “Grown-in and Process-Induced Defects in Silicon Nucleation, Growth Kinetics and Impact on Electrical Device Properties” and “Technology Challenges Related to Ultimate CMOS and the End-of-Roadmap Microelectronics”. A special IEEE chapter meeting of EDS was hosted on the evening of 12 September. For additional information, please visit the conference web site at: http://www.sbmicro.org.br/sbmicro/sbmicro2002/index.html, or send an email to Jacobus W. Swart at Jacobus@led.unicamp.br

—Adelmo Ortiz-Conde, Editor

 

---

Europe, Middle East & Africa (Region 8)

MTT/ED/CPMT/COM/SSC Novosibirsk

- by Vyacheslav P. Shuvalov

Now we would like to present the technical, professional and business activity of the Joint Novosibirsk ED/MTT/ CPMT/COM/SSC Chapter from September 1, 2001 to October 1, 2002.

First of all, at the elections held in October, 2001, I was elected as Chair of the Joint Chapter and Associate professors Alexander Gridchin and Vasily Snournitsin were elected to be vice-chairs for the ED/CPMT and MTT/SSC groups accordingly.

The total membership of the chapter is 65, with the total IEEE membership in Novosibirsk being about 120. There are 2 chapters and 2 student branches at Novosibirsk State Technical University (NSTU) and Siberian State University of Telecommunication and Informatics (SibSUTI).

The recent technical activity of the chapter included:

The contacts with the other Russian regions and IEEE chapters and student branches are developing. Now our chapter has contacts with specialists from many cities of the Siberian Region (Omsk, Tomsk, Krasnoyarsk, Irkutsk, etc.) as well as from Moscow, St. Petersburg, Saratov (Russia) and Kiev, Lviv and Vinnica (Ukraine). Our further plans are:

Preparing the first issue of the IEEE Siberia Newsletter. The frequency of this Newsletter is planned to be 4 or 6 times per year.

Chapter Chair and Vice-chair Vyacheslav Shuvalov (right) and Alexander Gridchin (left) near the exposition of IEEE resources, Siberian Fair, Novosibirsk

---

AP/ED/EMC/MTT/COM Tomsk Joint Chapter & Student Branch

- by Oleg V. Stoukach and Eugene I. Golovin

During March 19-20, 2002 in Tomsk, Russia, the IEEE-Siberian Conference on Electron Devices and Materials SIBEDEM-2002 was successfully held. The SIBEDEM was organized by the Tomsk Chapter & ED/MTT/CPMT/COM/SSC Student Branch with support of the Russian Foundation for Basic Research, and with IEEE EDS technical co-sponsorship. The Conference was also organized by the IEEE Novosibirsk Chapter, the IEEE Student Branch of Novosibirsk State Technical University and the GOLD Affinity Group of the Russian Section.

The plenary meeting was opened by professor Stanislav Shandarov, head of the Electron Devices department. His workshop was devoted to modern advances in UHF electronics, medical electronics, etc.

The conference sessions included a wide spectrum of topics like the methods of computing for studying the physical phenomena in electronic devices and materials. Also, the application of electron devices to biomedicine was highlighted. The aura of the conference was warm and friendly. As a result of this, we had a great experience in interaction with foreign colleagues and now feel the need for further international cooperation.

—Alexander V. Gridchin, Editor

---

10th International Conference MIXED Design of Integrated Circuits & Systems - MIXDES 2003

- by Andrzej Napieralski

The Department of Microelectronics and Computer Science of the Technical University of Lodz is organizing, the 10th International Conference, MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS - MIXDES 2003, which is also co-organized by the IEEE CAS & ED Chapters of the Polish Section.

The conference gathers teachers, scientists, professional organizations and industry leaders from around the world to continue the dialogue on education, teaching experience, training and technology transfer in the domain of mixed design and the application of integrated circuits and microsystems.

During the past years, MIXDES has been expanding and adapting its topics to meet the needs of contemporary electronic and microsystems engineers. The number of participants has growen continuously, starting at 40 in 1994 and reaching 140 at the last conference in 2002.

In a relatively short period of time, the conference has become a significant event in Central Europe, encompassing research in design, modelling, simulation, testing and manufacturing in micro- and nanoelectronics, semiconductors, sensors, actuators and power devices.

In 2003, the MIXDES Conference will celebrate its 10th anniversary. The conference will be held from 26 - 28 June in Lodz – the organizers’ home city. Lodz is not only known for its textile, electronic and electrical industry but is also a cultural centre of many theatres, an opera house, museums and several university level schools. Lodz is well known for its modern shopping area and it is also noted for the beauty of its attractive surrounding countryside and forests. It has the largest wood park in the city area in Europe. The organizers plan the following topics during the conference:

1. Design of Integrated Circuits and Microsystems – Design methodologies. Digital and analogue synthesis. Hardware-software co-design. Reconfigurable hardware. Hardware description languages. Intellectual property-based design. Design reuse.

2. Thermal Issues in Microelectronics – Thermal and electro-thermal modelling, simulation methods and tools. Thermal mapping. Thermal protection circuits.

3. Analysis and Modelling of IC and Microsystems – Simulation methods and algorithms. Behavioural modelling with VHDL-AMS and other advanced modelling languages. Microsystems modelling. Models reduction. Parameters identification.

4. Microelectronics Technology and Packaging – New microelectronic technologies. Packaging. Sensors and actuators.

5. Testing and Reliability – Design for testability and manufacturability. Measurement instruments and techniques.

6. Power Electronics – Design, manufacturing, and simulation of power semiconductor devices. Hybrid and monolithic Smart Power circuits. Power integration.

7. Signal Processing – Digital and analogue filters, telecommunication circuits. Neural networks. Artificial intelligence. Fuzzy logic. Low voltage and low power solutions.

8. Medical Applications – Medical and biotechnology applications. Thermography in medicine.

9. Education – Education methodology, software, and tools. Web-based teaching.

Following suggestions made at the previous MIXDEX meetings, a new topic, Medical Applications will be introduced at the conference in 2003.

The deadline for the full paper submission is 28 February 2003. Papers will be accepted in electronic form (MS Word, PostScript or pdf) only. More information can be found at http://www.mixdes.org. Any questions can be sent to mixdes@dmcs.p.lodz.pl.

—Andrzej Napieralski, Editor

---

ED Israel

- by Nathan Croitoru and Gady Golan

On Sunday, July 7, 2002, at the Holon Inst. of Technology (HAIT) - Holon. Subject of meeting: “TUNABLE PHOTONIC CRYSTALS”, Guest lecturer was Prof. Peter Halevi from Instituto Nacional de Astrofisica, Optica Electronica, Mexico. Chairmen of the meeting: Prof. Nathan Croitoru and Dr. Gady Golan -30 people, students and academic staff, attended the meeting in Holon. In his lecture, Prof. Halevi focused on an emerging topic of interest which is the tunable PCs, that is, making use of some external agent in order to change the optical response of the PC.

Here he focused on two such methods, proposed recently:

A. Semiconductor with a substantial density of free carriers. By raising the temperature or by charge injection, one can increase the density of electrons or holes, thereby altering the optical properties of the PC. This behavior can be described by means of a simple plasma model.

B. Based on a 2D array of cylindrical holes in some host material. If these holes are infiltrated by means of a liquid crystal, then an external electric field will change the optical properties of the PC. A simple description of the dielectric response of the liquid crystal, enclosed by a cylinder, leads to considerable sensitivity of the photonic band structure on the applied electric field.

---

MTT/ED/AP/LEO UK&RI

-by Terry Oxley

The 7th IEEE High Frequency Postgraduate Student Colloquium (HFPSC2002) was hosted by Imperial College and held at The Imperial Hotel in London, on the 8th and 9th of September 2002. Coordinated by Dr Stavros Lucyszyn (Imperial College London), the event was organised by Imperial College London and the Chapter, with technical co-sponsorship from MTT-S and EDS.

The first day consisted of an Invited Talk given by Professor Iain Thayne from the University of Glasgow, with the title, “The high frequency of RF techniques in contemporary systems, from GHz PCs through UWB/software radio to autonomous sensor networks”. Professor Thayne gave an excellent high-level view of current and future technologies for underpinning modern RF applications; this not only included descriptions of what is possible, but also highlighted technological problem areas for future researchers to address. Later that evening a lively reception dinner was held within the hotel.

The second day saw the main business of the Colloquium. Opened by an address from the Conference Chairman, Dr Stepan Lucyszyn (Imperial College London), the technical programme presented some 20 papers in four sessions covering the topics of Passive Microwave Components, Microwave Circuits and Systems, Millimetre-Wave Components and Applications, and Optical Components and Circuits. Presentations included contributions from Imperial College London, UMIST, The Queens University of Belfast, Sheffield Hallam University, Aston University, Lancaster University, City University and the Universities of Essex, Glasgow, Surrey, Leeds, Liverpool and Glamorgan. The Colloquium Prize of a certificate and £100 went to Yicheng Lai, from Aston University, for his paper entitled, “High frequency signal generation for fibre-radio applications based on a novel fibre laser structure”. This paper was co-authored by W. Zhang and J. A. R. Williams, under a joint collaboration with Aston University and Indigo Photonics Ltd. The paper will also be reprinted in Microwave Engineering Europe, published by CMP Europe. Yicheng Lai, from Singapore, is a second year PhD student and he gave an excellent presentation of his work. The paper describes an all-fibre optical device for producing a stable millimetre-wave beat frequency at 32.5 GHz. Potentially, this work could dramatically reduce the cost of generating millimetre-wave power, as it does not require extensive feedback control or an external frequency synthesizer.

Yicheng Lai (Winner of the Student Prize) and Dr. Stepan Lucyszyn (Chairman of the HFPSC 2002).

The 8th HFPSC (HFPSC2003) will be hosted by The Queen’s University of Belfast. Please contact Prof. Vincent Fusco for further details: vf.fusco@ee.qub.ac.uk

For further information on Chapter news, please contact the Chapter Chairman: Ali A Rezazadeh, Professor of Microwave Engineering, Dept. of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST), P.O. Box 88, Manchester M60 1QD, UK. Tel: +44 (0)161 200 4708 (Sec.4801). E-Mail: a.rezazadeh@umist.ac.uk.

—Gady Golan, Editor

---

Asia & Pacific Region 10

AP/ED Bombay

- by Prof. V. Ramgopal Rao

On July 2, 2002, Dr. Malay Trivedi (Primarion, USA) gave a talk entitled “Digital Multiphase Power: Changing the landscape of processor power” at IIT Bombay which was attended by over 100 students. The Chapter also organized an All India EDS Chapters meeting in Bombay on July 20, 2002. All the EDS India chapters were represented at this meeting. The India EDS chapters’ partners, Dr. Renuka Jindal (University of Louisiana at Lafayette, USA), Dr. Radhakrishnan (Philips, Singapore) and Prof. J. Vasi (IIT Bombay), participated in the deliberations. Various issues concerning the EDS activities in India and their functioning were discussed.

On July 20, the Chapter and the IEEE Bombay Section jointly organized an IEEE EDS Distinguished Lecture given by Dr. Jindal at IIT Bombay. Dr. Jindal discussed the Nano-FET fluctuation physics and random noise and its manifestation in the MOSFET structure.

On August 6, the Chapter organized a Seminar given by Prof. Gianchandani of the University of Michigan entitled “Microplasmas, Microactuators, Microscopy: A Cross-Section of MEMS Structures”. The talk was extremely well received by the students.On September 5, a seminar was given by Prof. Sheila Prasad of Northeastern University on “High Frequency Characterization of HBTs”.

On September 30, a one day Microelectronics workshop was held at the Thadomal Shahani College of Engineering. Over 100 students registered for this workshop from all over Bombay.

For more information, please contact Prof. Ramgopal Rao, Electrical Engineering Department, IIT Bombay, Powai, Mumbai 400076, India, Fax: 91-22-5783480, Email: rraol@ee.iitb.ac.in

The All India EDS Chapters Meeting held in Bombay. Standing from left to right: M.B. Patil, ED Bombay chapter, Navakant Bhat, ED Bangalore chapter, Ramgopal Rao, ED Bombay chapter, Govind, India ED chapter, New Delhi, Sarkar, IEEE Calcutta Section representative, and Shaligram, ED Bombay chapter. Seated from left to right: India EDS Chapters' partners, J. Vasi, Renuka Jindal and M.K. Radhakrishnan.

ED/SSC Bangalore

-by Prof. Navakant Bhat

A one day workshop entitled “VLSI: Challenges and Opportunities in the Nanometer Era” was organized on 6 July 2002 with 4 seminars: ‘Design challenges in Nanometer era’, given by V. Menzes (Texas Instruments); ‘Technology challenges in Nanometer node’, given by P.R. Suresh (Texas Instruments); ‘Impact of transistor mismatch on sense amplifier design’, presented by N. Bhat (Indian Institute of Science) and ‘Quantum Electronics devices’, given by P. Ray (National Semiconductor). This workshop was attended by more than 100 students.

The IEEE Distinguished Lecture “Nano-FET Fluctuation Physics”, was presented by R. Jindal on 22 July 2002. The ED/SSC Bangalore chapter co-operated with the VLSI Society of India in arranging “VLSI Design and Test Workshops 2002” from 29 to 31 August at the Indian Institute of Science. There were more than 300 delegates attending this event. The Chapter organized a special session on MEMS and set-up an IEEE exhibit booth for the delegates, showcasing various publications of the ED and SSC societies.

The Chapter organized a short course on “Quantum Electronics Devices” to enable the students and professionals to learn about this fascinating field. This course was conducted by Dr. Partha Ray of National Semiconductor. The response was very good with about 70 attendees in the first lecture.

For more information, please contact Prof. Navakant Bhat, ECE Department, Indian Institute of Science, Bangalore, India-560012, Email: navakant@ece.iisc.ernet.in.

From left to right: Navakanta Bhat, (Chair), Renuka P. Jindal (Chapter partner), R. Suresh (Vice Chair) and Santosh Salunkhe (Treasurer/Secretary)

ED/MTT India

- by Dr. K.S. Chari

The Chapter participated in the All-India EDS Chapters’ Meeting at IIT Bombay on 20 July and discussed issues such as organizing joint international conferences, diversifying chapter activities, international collaboration between chapters, membership upgradation, awards, etc.

Dr. R. Jindal visited the Chapter on 24 July. Various issues were discussed such as raising resources from industry and the parent India council/Delhi section, and spreading regional activities. The Chapter organized a DL Talk, “Silicon on Insulator MOSFETS for Analog Applications” , given by Prof. Juzer Vasi on 23 August. The Talk was attended by 30 participants.

Prof. Ajay Malshe of the University of Arkansas gave a lecture on ” Interrogated Micro and Nano systems – Challenges & Opportunities “ at Delhi on 6 August. The talk was attended by 40 participants.

The Chapter jointly organized, with Shanmugha Arts, Science, Technology & Research Academy, a 3 day National Workshop on Embedded Systems during September 12-14, 2002. The Workshop received an overwhelming response with 134 registered delegates. The Chapter Chair visited the University of Hyderabad on 19 September and addressed the students and faculty members on the importance of IEEE/EDS activities.

CPMT/ED/R Singapore

- by M.K. Radhakrishna

The 9th International Conference on Physical and Failure Analysis of Integrated Circuits (IPFA 02), which was held from 8 to 12 July, at Raffles City Convention Centre, was a great success. Four tutorials by four experts in the field were given and attended by more than 100 engineers /managers from the industry in Singapore and the region. The symposium had 51 papers presented in 12 sessions, including 5 invited papers and 2 Best Paper exchanges between ESREF and ISTFA. About 150 participants from 16 countries attended the symposium. An equipment exhibition was held along with IPFA.

The Chapter donated a Book Prize at the School of Electrical and Electronics Engineering, Nanyang Technological University (NTU), Singapore to reward the best student in microelectronics. The book prize is given yearly and is known as the IEEE R/CPMT/ED Chapter Book Prize.

An EDS distinguished lecturer, was given by Prof. Juzer Vasi on 8 July 2002, at the Indian Institute of Technology, Bombay on “Silicon-on Insulator MOSFETs for Analog Applications”, which was organized in collaboration with the National University of Singapore. The lecture was attended by more than 30 people from academia and industry.

For more information on Chapter activities, please contact Chapter Chair: Dr. Radhakrishnan, email: radhakrishnan@ieee.org.

NTU Book Prize MOU signing: Prof. Er Meng Hua, NTU Dy. President and the Head of Departments with Chapter Chairman and Vice-Chair

ED Malaysia

- by Burhanuddin Yeop Majlis

The ED Malaysia chapter has organized a workshop on Design and Analysis of Experiment at the Faculty of Engineering, Universiti Kebangsaan Malaysia on July 16-17, 2002. The workshop was attended by postgraduate students and lecturers from local universities and research officers from research institutions. The analysis of variance (ANOVA) technique was used to analyze observational as well as experimental data. Hands on exercises and interpretation of results from SPSS package were stressed, so as to instill a thorough understanding of the underlying ANOVA techniques. An introduction on the important concepts in designing an experiment was also discussed. The workshop was led by Dr. Abu Hassan Shaari Mohd from the Universiti Kebangsaan Malaysia.

Attendees of the worshop on Design and Analysis of Experiment held 16-17 July 2002 at the Universiti Kebangsaan Malaysia.

For more information, please contact Prof. Majlis, Department of Electrical, Electronics and System Engineering, Universiti Kebangsaan Malaysia. Tel: 603-89265861, FAX: 603-89259080, Email: burhan@eng.ukm.my.

—Wee Kiong Choi, Editor

ED Japan

- by Yuu Watanabe

Dr. Naoki Yokoyama, ED Chapter Chair

The Chapter has started to fund an “EDS Japan Chapter Award” to encourage and support the research activities of young student members in the chapter. The award is given to the individuals who make distinguished contributions to the electron devices engineering. The Japan Chapter will select the winner of the award in December based on the papers presented at the international conferences such as IEDM, Symposium on VLSI Technology, Device Research Conference and other electron devices related Symposiums. It is not necessary to submit an application form, but recommendations are welcome.

The first winners of the “EDS Japan Chapter Award” will be honored at the annual chapter meeting held in January 2003, Tokyo, Japan, presented with prize money and memorial plates. For more information, please contact Y. Watanabe, email: yuu.watanabe@jp.fujitsu.com.

ED Kansai

- by Hiroshi Nozawa

The ED Kansai Chapter held a technical meeting and an administrative meeting for the third quarter of 2002. The Chapter held the Kansai Colloquium Electron Devices Workshop at Osaka Univ. Convention Center, Osaka, Japan on 11 July 2002. There were 25 participants including students.

Dr. A. Misaka of Matsushita Electric Industry, the winner of MFSK Award

At the opening, the first winner of the MFSK (Message From Spirited Kansai) Award, Sigenobu Maeda of Mitsubishi Electric Corporation, was honored with an engraved memorial wall plaque. At the Kansai Colloquium Electron Devices Workshop a contest was held for the second MFSK (Message From Spirited Kansai) Award. The nominated candidates were 9 persons who presented technical papers. The chair of the award, H. Inoue filling in for T. Nishimura, organized an evaluation committee of 6 referees. The referees independently ranked the candidates based on technical level, impact for the future and presentation skill. The evaluation committee selected fairly, A. Misaka of Matsushita Electric Industry, as the winner. The title of his paper was “Super-Resolution Enhancement Method With Phase-Shifting Mask Available for Random Patterns”. The Executive Committee of the ED Kansai Chapter, which held a meeting in conjunction with the workshop, approved the award procedure after critical examination. The winner of the second MFSK Award will be honored at the next Kansai Colloquium Electron Devices Workshop, January 2003 with an engraved memorial wall plaque. In addition, the ED Kansai Chapter is in cooperation with three technical meetings. One was a workshop sponsored by JSAP, at Osaka, June 2003. The other two are international conferences, 2003 SISPAD in Kobe and 2003 SSDM in Nagoya. The ED Kansai Chapter contributes to circulating information about these conferences to EDS members and many members contribute to the organization and paper presentation.

—Hisayo S. Momose, Editor

ED/SSC Hong Kong

-by Hei Wong

The ED Hong Kong Chapter reaches a major milestone this year, as we enter our 10th year as a chapter. To enhance the collaboration with the solid-state circuits experts, to reflect the broad interests of our EDS members, and to further boost the number of local members, the Chapter has now evolved into a new joint chapter, the ED/SSC joint chapter. In addition, to organize more high-quality technical activities in both areas, our new role and mission will be facilitating interaction between ED and SSC members.

We had organized several major technical activities this year. On February 18-21, 2002, a short course, “Thin Film Science and Technology & The State-of-Art Applications”, was run by Professor Huey-Liang Hwang of the National Tsinghua University. On June 22, 2002, we organized our annual major event, The Hong Kong Electron Devices Meeting. Two EDS distinguished lecturers, J. B. Kuo and J. J. Liou, were invited to deliver invited talks on the latest development on “modeling of fringing effect in SOI NMOS devices” and “RF/microwave transistors”, respectively at the Conference. We will also sponsor the IEEE International Conference on Field-Programmable Technology (FPT) to be held during 16-18 December 2002.

Ed Distinguished Lecturers J. B. Kuo and J. J. Liou, members of IEEE Hong Kong Chapter and other participants at the 2002 Hong Kong Electron Devices Meeting.

To celebrate the 10th Anniversary of the IEEE ED Hong Kong Chapter and the establishment of the new ED/SSC joint Chapter, the new Chapter is organizing a three-day international conference, the IEEE Conference on Electron Devices and Solid-State Circuits. The Conference will be held at the New World Renaissance Hotel from July 3 to 5, 2003. The three-day program comprises broad areas in electron devices, materials and solid-state circuits. The aims of this conference are to bring together scientists, engineers, and students to discuss the latest achievements in electron devices and solid-state circuit designs and to facilitate interactions among local researchers as well as their international counterparts. Tentative invited talks of the Conference include: The Sisoft project (C. Y. Chang, National Chiao Tung Univ.,Taiwan); Nonvolatile RAMs in silicon carbide (S. Dimitrijev, Griffith Univ., Australia); Design of SONOS memory transistor for terabit scale EEPROM (V. A. Gritsenko, Inst. of Semicon. Phys., Russia); Ultralow-voltage memory technology: Current status and future trends (K. Itoh, Hitachi, Japan); Advanced CMOS Technologies for technology nodes of sub-70 nm and below (H. Iwai, Tokyo Inst. of Techno., Japan); Recent progress in compound semiconductor photonic integrated circuits (C. Jagadish, Australian National Univ., Australia); Challenges of SOI CMOS VLSI (J. B. Kuo, Waterloo Univ., Canada); Trapping centers in hafnium and zirconium oxide/silicon systems (P. Lenahan, Penn. State Univ., USA); RF CMOS: Recent advances and future applications (J. J. Liou, Univ. of Central Florida,USA); Challenges and recent advances in SiC device technology (M. Ostling, Royal Inst. of Technol., Sweden); Semiconductor manufacturing in the 21st century: Trends and impact of potential disruptive technologies (R. Singh, Clemson Univ.,USA); Effects of electrical stressing in power VDMOSFETs (N. Stojadinovic, Univ. of Nis, Yugoslavia); Biologically inspired smart vision sensors in CMOS technology (J. Van der Spiegel, Univ. of Penn., USA); A possible roadmap for nanoelectronics (K.L. Wang, HK Univ. of Sci. & Technol., Hong Kong); and Beyond the conventional transistor (H.-S. Philip Wong, IBM, USA)

For further information, please contact: Dr. Hei Wong, General Chair of EDSSC’03, Dept. of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong. Fax: (852) 2788 7791, Email: eehwong@cityu.edu.hk; Or visit our Conference Web Site: http://www.ee.ust.hk/ieee_eds/EDSSC.htm

—Tahui Wang, Editor