2002 EDS GEORGE E SMITH AWARD
The George E. Smith Award was
established in 2002 to recognize the best paper appearing in a
fast turnaround archival publication of the IEEE Electron Devices
Society, targeted to IEEE Electron Device Letters. This award
has been named after the founding editor-in-chief of the publication,
George E. Smith. Among other selection criteria, an equally important
one, is comprehensive and fair referencing of prior art.
The first-ever paper winning the George E. Smith has been selected.
The winning paper is entitled "Self-Aligned SiGe NPN Transistors
with 285 GHz fMAX and 207 GHz fT in a Manufacturable Technology".
The paper appeared in the May 2002 issue of Electron Device Letters
and the authors are: D. Ahlgren, D. Angell, H. Chen, J. Florkey,
G. Freeman, F. Golan, D.R. Greenberg, R. Groves, B. Jagannathan,
S.J. Jeng, J. Johnson, M. Khater, E. Mengistu, F. Pagette, J.-S
Rieh, C.M. Schnabel, K.T. Schonenberg, P. Smith, K. Stein, A.
Stricker, and S. Subbanna. The recipients are awarded a certificate
and a check for $2,500. The 2002 award will be presented at the
IEDM on 8 December, 2003 in Washington, D.C. The following are
brief biographies of the twenty-one winners.
David
C. Ahlgren received his BA from DePauw University, Greencastle,
IN, in 1973 and PhD in Chemical Physics from The University of
Michigan, Ann Arbor, MI, in 1979. He joined IBM in Hopewell Junction,
NY in 1979 conducting semiconductor process development. He is
currently Senior Engineering Manager of SiGe Advanced BiCMOS Technology
Development.
Dr. Ahlgren has published over 50 technical papers and holds 9
patents in semiconductor device and process technology.
David Angell (photo not available) received
a Doctorate in Physics from State University of New York at Albany,
concentrating on defects in semiconductor materials. Worked for
IBM in research, development and production of semiconductor chips.
Current assignment is in Real-time Process Monitoring and Control
in IBM's 300mm chip manufacturing facility at East Fishkill, New
York.
Huajie
Chen re-ceived his B.S. and M.S. in physics from Fudan University,
Shanghai in 1993 and 1996, respectively, and Ph. D. in physics
from Carnegie Mellon University, Pittsburgh in 2000. He is currently
a development engineer at IBM Semiconductor Research and Development
Center, working on Si/SiGe materials, SiGe BiCMOS, and strained
Si CMOS.
John Florkey (photo not available) received the B.S. and M.S. degrees in Materials Science at The Ohio State University, in 1997 and 2001, respectively. From 1997 to 1999, he worked at Seagate Technology Incorporated's Recording Head Operations in Bloomington, MN. In 2001, he joined the Silicon Germanium Passives Integration Group, IBM Microelectronics.
Greg
Freeman received his PhD in EE from Stanford University in
1991, and has since worked at IBM Microelectronics in East Fishkill
NY. He currently is a senior engineering manager, managing a department
with responsibility for high performance SiGe and RFCMOS device
design, RF characterization, and compact modeling.
Frank
Golan, prior to working in silicon germanium microelectronics
process integration, worked since 1998 in photolithography metrology
and chemical mech-anical planarization process development with
IBM in Hopewell Junction, NY. He was previously employed with
Philips Semiconductor (formerly Micrus) as an equipment engineer
in CMP while working on his undergraduate degree in chemical engineering
which he received in 1998 from Rensselaer Polytechnic Institute.
David
R. Greenberg is a semiconductor device researcher working
in advanced RF technology development and assessment. He earned
a B.S. degree in electrical engineering at Columbia University
under a Pulitzer scholarship in 1988 and completed both his M.S.
and Ph.D. at M.I.T under Hertz and Intel Foundation fellowships
in 1990 and 1994, respectively. Dr. Greenberg joined IBM in 1995.
He is an author or coauthor of 4 patents and over 30 technical
papers and is a member of Tau Beta Pi and the Institute of Electrical
and Electronics Engineers.
Robert
A. Groves received the B.S.E.E degree from the State University
of New York in 1996. He joined IBM Corporation, Microelectronics
Division in East Fishkill, NY in 1989 as a Development Lab Technician.
Since 1994, he has worked on SiGe technology development, with
an emphasis on high frequency modeling and characterization. His
current interest is in microwave passive devices on silicon (interconnect,
capacitors, and inductors), particularly integrated spiral inductor
optimization and modeling.
Basanth
Jagannathan obtained B.Tech. degree from IIT, Kharagpur, India
and M.S and Ph.D from State University of New York at Buffalo.
He is with IBM Microelectronics where his current research interests
lie in CMOS/BiCMOS technology development for rf and high speed
communication systems.
Shwu-Jen
Jeng received the Ph.D. degree in Materials Science and Engineering
from University of Illinois, Champaign-Urbana. She joined IBM
in 1986 and worked on reactive ion etching damage, in-situ oxide
removal and silicidation of silicon as well as wide band gap emitter.
In 1994, she joined IBM, SRDC and has been working on SiGe BiCMOS
Device and Process Development.
Jeffery
Johnson, after receiving a Ph.D. degree in electrical engineering
from Carnegie-Mellon University in 1987, he joined IBM to work
on technology CAD. He is currently a Senior Technical Staff Member.
Marwan
H. Khater received B.S. degree in Physics from Middle East
Technical University, Turkey, M.S. degree in Physics, with Computer
Science minor, from Southwest Texas State University, and Ph.D.
in Electrical Engineering from the University of Texas at Dallas.
Currently he is working at IBM Microelectronics on development
of Silicon-Germanium bipolar transistor technology for high speed
applications.
Endeshaw
H. Mengistu was born in Addis Ababa, Ethiopia, in 1968. He
received the B.S. and M.S degrees in Physics from Addis Ababa
University, Addis Ababa, in 1989 and in 1995 respectively. He
received an M.S degree in Physics from Clemson University, Clemson,
South Carolina, USA, in 1997 and received an M.S degree in Electrical
engineering from Brigham Young University (BYU), Provo, Utah,
USA, in 1999.
In 1994, he was with KFA , Juelich, Germany. From 1999 to 2001,
he worked with IBM.
Currently, he is with HaloLSI Device inc. working as a Test/Device
engineer in MONOS flash memory.
François
Pagette received the B.S. degree in Physics from Univesité
de Sherbrooke, Québec (1992) and the MS degree in electrical
engineering from Carleton University, Ontario (1995). He occupied
various BiCMOS process development positions at Nortel Networks,
Ontario (1990-1994). He was a photolithography engineer at Texas
Instruments, Dallas, (1995-2001). He since joined IBM's SiGe integration
team.
Jae-Sung
Rieh received B.S. and M.S. degrees in electronics engineering
from Seoul National University, and Ph.D. degree in electrical
engineering from the University of Michigan, Ann Arbor. Since
1999, he has been with IBM Semiconductor R&D Center, Hopewell
Junction, NY, where he is involved in high-speed SiGe HBT device
design and characterization.
Christopher
Schnabel received the B.S. and M.S. degrees in electrical
engineering from Case Western Reserve University, Cleveland, Ohio
in 1999 and 2000, respectively. He joined IBM Corporation, Hopewell
Junction, NY, in 2000, where he is working on analog and mixed
signal technology development.
Kathryn
Schonenberg received a B.S. in Chemical Engineering from Purdue
University in 1985. She joined IBM as a process engineer in 1985,
working in photomask manufacturing, semiconductor manufacturing.
She received a M.S. in Materials Science from Columbia University
in 1996. She currently works for the IBM T.J. Watson Research
Center in Yorktown Heights, NY as a SiGe process integration engineer.
Peter
Smith received the B.S. and M.S. degrees in Electrical Engineering
from the Pennsylvania State University in 1999 and 2001. He subsequently
joined the IBM Semiconductor Research and Development Center as
a Staff Engineer. His work primarily involves development, design,
and characterization of high performance SiGe heterojunction bipolar
transistors.
Kenneth
J. Stein is an Advisory Engineer in the Silicon Germanium
BiCMOS Department, with responsibilities in the areas of FEOL,
BEOL and Passives process integration. He has held both management
and process integration positions in both Research and Microelectronics
Divisions, and holds a number of patents in bipolar and passive
devices.
Andreas
D. Stricker was born in Bern, Switzerland, in February 1965.
In January 1992, he received his M.S. degree in applied physics
from the University of Bern where he worked in the field of LASER
interactions with solid state materials. Andreas Stricker started
his Ph.D. studies at the Integrated Systems Laboratory. He published
his thesis, "TCAD of ESD Protection devices", in November
2000. Andreas Stricker is now with IBM Microelectronics, Burlington,
Vermont where he joined the SiGe RF device and modeling group.
Seshadri
Subbanna received the Ph.D. degree in electrical engineering
and materials science from the University of California, Santa
Barbara. Since joining IBM Microelectronics, East Fishkill, NY,
he has held positions in base technology development, 0.22mm CMOS
and SRAM technology development from 1989 to 1996. Currently he
is with the Microelectronics division, systems Group Business
Unit, as program manager involved with advanced technology development
& integration into systems.
Renuka P. Jindal
University of Louisiana at Lafayette
Lafayette, LA, USA