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The 2001 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) will be held in Minneapolis, MN, from September 30 to October 2, 2001. BCTM provides a forum for the technical communication focused on the needs and interests of bipolar and BiCMOS engineers. The conference covers the design, performance, fabrication, testing and application of bipolar, BiCMOS and BiFET integrated circuits. This year's conference includes a short course, an evening banquet, several invited papers, a vendor exhibition, and a best student paper award.
The conference starts off with a Short Course on Sunday, September 30. The course is divided into four sessions, each 1.5 hours in length. The first session will be taught by Klaus Runge (Gtran) concerning high-speed IC circuit design for optical communications. Joerg Berkner (Infineon Technologies AG) will teach the second session and will discuss parameter extraction for bipolar compact models. The third session will be led by Jeff Johnson (IBM) on the topic of process device simulation of SiGe HBT DC/AC characteristics. David Pehlke (Ericsson) will give the final short course session on the subject of production measurement techniques. The BCTM short course has become a very popular part of the conference and attracts a large percentage of the BCTM attendees each year.
On Monday morning, the technical program begins with the keynote speaker, Behrooz Abdi, from Motorola. Mr. Behrooz will discuss communication applications for the next decade and their requirements for circuits and technologies. After the Monday morning technical sessions, everyone is invited to a luncheon with an invited speaker. A banquet will be held on Monday evening. Several exhibits by design, test/measurement, and CAD/modeling vendors will also be on display at the conference.
The conference technical sessions offer exceptional technical papers that provide the latest and most significant developments in Bipolar/BiCMOS integrated circuits. Presentations are given in the following areas: Analog/Digital Circuit Design, Radio Frequency Circuit Design, Device Physics, Modeling and Simulation, Process Technology, and Power Devices. Invited and tutorial papers highlight the technical sessions by leading experts from industry and academia. These papers focus on new directions in Bipolar/BiCMOS technology, including emerging technologies.
The Analog/Digital Design Session covers: Analog ICs; Digital ICs; Mixed Analog/Digital ICs; Novel Design Concepts and Methods; DACs and ADCs; Amplifiers; Integrated Filters; Communications ICs; Sensors; Gate Arrays; Cell Libraries; Analog Master Chips; Analog ICs describing novel subsystems within a VLSI Chip; and Packaging of High-Performance ICs.
The Radio Frequency Design Session will contain papers on: Low-Noise Amplifiers; Automatic Gain Control; Low-Phase Noise VCOs; Active Mixers; Active Gyrators; Noise Suppression Techniques; Frequency Synthesizers; Radio Subsystems; Packaging of RF Components; and Designing with Passive Components at RF Frequencies.
The Device Physics Session covers the following areas: New Device Physics Phenomena in Si, SiGe, and III-V Devices; Profile Design Issues and Scaling Limits; Hot Electron Effects and Reliability Physics; Non-Equilibrium Transport and High Field Phenomena; Low-Frequency Noise; and Novel Measurement Techniques.
The Modeling and Simulations Session covers: Improved BJT and HBT Models; Behavioral Modeling Techniques; Parameter Extraction Methodologies and Test Structures; RF and Thermal Simulation Techniques; Modeling of Passive Components, Interconnect and Packages; Statistical Modeling; and Device, Process and Circuit Simulation.
The Process Technology Session covers: Advances in Processes and Device Structures Demonstrating Capabilities of High-Speed, Low-Power, Low-Noise, High-Current, High-Voltage, etc.; BiCMOS Processes; Advanced Process Techniques; Si and Si-C Homojunction Bipolar/BiCMOS devices; III-V and SiGe Heterojunction Bipolar/BiCMOS Devices; and Fabrication of High-Performance Passive Components including MEMs.
The Power Devices Session focuses on Discrete and Integrated Bipolar/BiCMOS Power Devices and High-Voltage ICs. Areas included are: Automotive Electronics; Disc Drives; Display Drives; Power Supplies; Electric Utility; Medical Electronics; Motor Controls; Regulators; Amplifiers; Converters; Aerospace Electronic Applications; BiCMOS Circuits for Controlling Power Devices; CAD and Modeling of Power Devices; and Packaging of Power Devices.
The Bipolar/BiCMOS Circuits and Technology Meeting is held at the Marriott City Center Hotel in downtown Minneapolis. The Marriott offers the finest hotel accommodations in the Twin Cities area. Explore the ultramodern City Center shopping complex adjoining the hotel. Stroll by skywalk to an array of boutiques, cinemas, nightspots, and the tree-lined sidewalks of the famous Nicollet Mall. Minneapolis features world-famous cultural attractions such as the Guthrie Theater, Minneapolis Orchestra Hall, and historic Orpheum and State Theaters. In nearby Bloomington is the largest fully enclosed retail and family entertainment complex in the United States – The Mall of America. Here you can shop at over 400 stores, ride a roller coaster, shoot a round of miniature golf, or dine in sunlight or candlelight. There are two wonderful zoos and many other tourist sites in the Twin Cities.
BCTM is sponsored by the IEEE Electron Devices Society, in cooperation with IEEE Solid-State Circuits Society and the IEEE Twin Cities Section. The 2001 Conference Chair is Kenneth O, University of Florida, Gainesville, FL. The Technical Program Chair is Hiroshi Iwai, Tokyo Institute of Technology, Yokohama, Japan. Interested parties can contact the BCTM Conference Manager:
Janice Jopke
CCS Associates
Eden Prairie, MN