2002 IEEE Lester Eastman Conference on High Performance Devices

 

The IEEE Lester Eastman Conference on High Performance Devices will be held August 6-8 (Tuesday-Thursday), 2002 in Newark, Delaware. This biennial conference, previously called the IEEE/Cornell University Conference on High Performance Devices, will continue its tradition of highlighting important developments in high-speed semiconductor devices, optoelectronics and novel concepts. This year the venue for the conference is the University of Delaware campus, located in Newark, Delaware. Newark is a classic college town in northwestern New Castle County, an area of beautiful rolling hills tucked away in the urban Eastern corridor, for outstanding cultural and recreational opportunities. It is easily accessible by air, bus and train, and is a drive of a half-day or less from most major cities in the Northeast.

The following three topical areas comprise the scope of the Conference and papers:

  • Microwave and millimeter wave devices and circuits
  • Optoelectronic devices and circuits
  • Speculative materials, devices, and circuits concepts

Topics of interest within these areas include, but are not restricted to:

  • Novel materials technologies and devices
  • Wide bandgap materials and devices
  • High speed and microwave optoelectronics
  • Light sources and detectors
  • Si-based heterostructures
  • Terahertz sources and detectors
  • High speed measurement techniques
  • Sb-based devices and circuits
  • High power and high speed packaging
  • Speculative concepts
  • Heterogeneous integration for increased functionality
  • Microwave and millimeter wave integrated circuits
  • Nanometer fabrication and self-assembly techniques
  • Molecular Electronics
  • Nanoelectronics
  • RF MEMS technology for >1 GHz

 

This year the conference will have the theme of "Over 30 years of Compound Semiconductor Device History". Celebrating the new conference name, a plenary session is planned in honor of Professor Lester Eastman, a seminal figure for this conference and the field of compound semiconductor devices. Technical thrust areas will include: wide bandgap materials and devices; narrow bandgap, low power materials and devices; and heterogeneous integration of dissimilar materials and devices. Papers are solicited covering the physics and performance of devices and circuits for high speed/frequency, high and low power devices, and optoelectronics. There will be invited papers in the key areas. Papers that emphasize innovative device concepts and physical phenomena leading to new devices are particularly encouraged. The proceedings of the conference will be published.

In order to encourage student participation, limited financial assistance for travel is available to first-named student authors who are presenting papers. This assistance should be requested when the abstract is submitted. Prospective authors are invited to submit a 300-word abstract plus one page of accompanying figures by May 1, 2002. The conference is sponsored by: the Electron Device Society (EDS) of the IEEE, in cooperation with the Microwave Theory And Techniques Society of the IEEE.

The planned dinner/social activity will be held at the Hagley, a renowned outdoor museum located along the Brandywine River on the site of the first du Pont powder works. The Hagley includes the first du Pont family home and garden in America, built by E. I. du Pont in 1803, a Blacksmith Hill workersÌ community, powder yards, and a nineteenth-century machine shop.

The University of Delaware campus in Newark, Delaware is conveniently located, a 1-hour drive from Philadelphia and 2 hours from Washington, DC (see http://www.udel.edu). Both individual and family accommodations will be available in area motels. Dormitory rooms are also available. For more information, see the conference web page at: http://nina.ecse.rpi.edu/shur/EastmanConference/.

James Kolodzey
University of Delaware
Newark, DE, USA