2002 IEEE International Electron Devices Meeting (IEDM)
The 2002 IEEE International Electron Devices Meeting (IEDM) will be held this year in San Francisco, California, U.S.A. at the San Francisco Hilton and Towers Hotel, December 9-11, 2002. IEDM is the premiere conference in the world for the presentation of advances in nano- and microelectronics and microelectronic-related devices and processes. IEDM is also the largest semiconductor device conference in the world, drawing presentations and attendees from industry, academia, and governmental agencies around the world. It is also the annual technical meeting of the IEEE Electron Devices Society, which this year will be celebrating its 50th anniversary.
The meeting this year will highlight some of the most interesting and important plenary and luncheon speeches in recent memory. During the opening Plenary Session of the conference, Dr. Luc Van den hove from IMEC in Belgium will discuss the future for a critical technology that supports the advancement of semiconductor applications, ‘Advanced Lithography’. Dr. Tsugio Makimoto from the Sony Corporation will present a talk on one of the most important and exciting applications that will be driving the development of many new and broadly-based microelectronic technology platforms, “Chip Technologies for Entertainment Robots: Present and Future”. Another important trend that is developing is that of the merging of optical and electronic technologies, enhancing their individual capabilities and broadening the applications for both. Professor Eli Yablonovitch from UCLA has been a pioneer in the field of photonics and optoelectronics and has been featured recently in many world-renown scientific journals discussing the relatively brief history and bright future for this potentially disruptive and breakthrough technology. He will present “Photonic Bandgap Based Designs for Nano-Photonic Integrated Circuits”.
Our Keynote Luncheon Speaker this year will be Dr. Andrew S. Grove, Chairman of the Board of the Intel Corporation, who has been one of the world’s pioneers and leader of the microelectronic technology and business revolution, as well as a world renowned educator through his textbooks, which are still at the heart of many semiconductor classes around the world. His talk on the “Changing Vectors of Moore’s Law” will be a highlight of our conference this year.
The heart of IEDM is its Technical Program. No other meeting presents as much leading edge work in such a broad variety of microelectronic-related topics. It offers students and their professors, scientists, and engineers a unique opportunity to hear about the latest work being done in their disciplines and related areas, as well as an opportunity to speak directly with other experts and colleagues working in these fields. An example of the breadth of topics to be discussed at this year’s meeting is that participation by leaders in the fields of MEMS, bioelectronic sensors and systems, and optoelectronic technologies are expected amongst these core areas:
- CMOS Devices
- CMOS and Interconnect Reliability
- Detectors, Sensors and Displays
- Integrated Circuits and Manufacturing
- Modeling and Simulation
- Processing Technology
- Quantum Electronics and Compound Semiconductors
- Solid State Devices
As an important central core of our conference, the CMOS Device sessions will cover the new breakthroughs and advancements in the areas of device physics, novel MOS device structures, CMOS scaling issues, high performance, low power devices, and analog/RF devices. Other topics of interest are SOI, strained silicon and SiGe device issues, noise behavior of MOS structures and device measurement and characterization.
CMOS and Interconnect Reliability will cover all areas of IC and device reliability, both the ‘front-end’ and ‘back-end’ of the processes. Specific topics will include hot carriers, gate dielectric wear-out and breakdown, process charging damage, latch-up, ESD and soft errors. In addition, interconnect reliability, electromigration, the impact of back-end processing on devices, manufacturing technologies for reliability, as well as reliability issues for SOI and BICMOS will also be addressed.
The Detectors, Sensors and Displays sessions will cover the design,
fabrication, reliability, theory, and modeling of the devices,
structures, and integration technology used for imaging, displays,
detectors, sensors, and microelectromechanical systems (MEMS).
A subset of these key topics includes CMOS imagers, CCD’s, TFT’s,
organic, amorphous and polycrystalline devices, vacuum microelectronics,
emissive displays and sensors for chemical, molecular and biological
applications.
Integrated Circuits and Manufacturing focuses on advances in integrated
circuits, novel memory cell concepts, full process integration
for memory, logic and mixed-mode applications, and their manufacturing
issues. Areas of specific interest includes process architectures
for performance and manufacturing advances, high-speed logic,
advanced memories, multifunction integrated circuits, integrated
passives, low power, low noise, analog, RF and mixed signal ICs.
Topics also include IC manufacturing technology and methodology,
process control, failure analysis, yield enhancements and modeling.
Modeling and Simulation papers will include analytical, numerical,
and statistical approaches to modeling electron devices operation,
their isolation and interconnection. Other topics include the
modeling of fabrication processes and equipment, simulation algorithms,
process characterization, and parameter extraction.
The Processing Technology sessions will cover front-end and back-end
process modules for the fabrication of CMOS logic, memory, and
BICMOS devices. Topics related to front-end processing will include
substrate technologies, lithography, etching, isolation technologies,
thin dielectrics, high dielectric constant materials for transistor
and MIM capacitors, shallow junctions, RTP, silicides, and new
materials. Topics related to back-end processing will include
interconnect systems, low dielectric constant materials, contact
and via processes, planarization, and design considerations for
multilevel interconnects.
Quantum Electronics and Compound Semiconductors will be covered
including wide bandgap materials with electronic and photonic
device applications. Specific device structures include FET’s,
HBT’s, high-power transistors, and devices with quantum, single
electron, ballistic or spin effects. Also included are bioelectronics,
self-assembly, nano- and molecular-scale devices, LED’s, lasers,
external modulators, photodetectors, optoelectronic and photonic
integrated circuits, and optical interconnects.
The Solid State Device sessions will discuss discrete and integrated
high power/current/voltage devices, silicon (Si) and silicon germanium
(SiGe) bipolar transistors, novel analog and digital devices and
technology, and high speed Si devices. Other integrated RF component
developments to be described will include inductors, capacitors
and switches, and single electron devices in silicon or silicon
germanium materials systems. Other even more novel silicon-based
structures may be included as well new methods of assessing silicon
device and material performance.
The Emerging Technologies session highlights breakthroughs in
important new technologies that will have a major impact on a
broad variety of applications and this year it will feature invited
talks from leading experts from around the world on Bioelectronic
Devices and Systems. As we enter the 21st century, it is projected
that this fascinating new area of emerging technology will play
a very important role in the sensing, evaluating, controlling,
and communicating of critical information in our everyday lives.
Another traditional and very popular part of IEDM is the Short
Course sessions. Many critical topics have been described in detail
to general as well as expert audiences during this set of seminars
over the years. This year there will be two short courses entitled
“RF Device Technologies for Communication Systems” and “The Future
of Semiconductor Manufacturing”.
The very informative and often entertaining Evening Panel Discussions
at IEDM will this year discuss and debate the following questions:
“Will SOI ever become a mainstream technology?” and “Embedded
Memories, what makes sense (cents)?”
For Registration and other information, visit the IEDM 2002 Home
Page on the World Wide Web at http://www. ieee.org/conference/iedm,
or contact Conference Managers Melissa Widerkehr and Phyllis Mahoney,
16220 S. Frederick Ave., Gaithesburg, MD 20877, USA; TEL: (301)
527-0900, ext. 103; FAX (301) 527-0994; or email: phyllism@widerkehr.com
The world famous San Francisco area provides many attractions
for visitors and we encourage attendees to explore them in the
off hours of the conference. The IEDM organizers and committee
members look forward to seeing you in December 2002.
Jon Candelaria
IEDM Publicity Chair
Motorola Labs, Motorola Inc.
Tempe, AZ, USA
Philip Wong
IEDM Publicity Vice-Chair
IBM T.J. Watson Research Center
Yorktown Heights, NY, USA