EDS Members Named Winners of 2002 IEEE Medals
Two EDS members won 2002 IEEE medals. Dr. Herbert Kroemer won the IEEE Medal of Honor and Dr. Yoshio Nishi won the IEEE Robert N. Noyce Medal.
IEEE Medal of Honor
"For contributions to high-frequency transistors and hot-electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology."
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| Herbert Kroemer |
Dr. Herbert Kroemer is a true pioneer in the field of
physics and in the technology of semiconductor and semiconductor
devices. His work in heterostructure-based transistors has furthered
the development of the cell phone and other wireless communications
technologies.
When Dr. Kroemer applied the heterostructure principle to semiconductor lasers, it allowed them to operate continuously at room temperature. This advance paved the way for the development of the semiconductor lasers used in CD players, fiber optics and other applications. It also is central to non-laser light-emitting diodes (LEDs), now found in most new U.S. traffic signals. His Nobel Prize-winning work was published in a 1963 paper, "A Proposed Class of Heterojunction Injection Lasers," in the Proceedings of the IEEE.
Dr. Kroemer originated the concept of the heterostructure bipolar transistor in the mid-1950s while with RCA Laboratories in Princeton, N.J. From 1959 to 1966, his work with Varian Associates, Palo Alto, Calif., yielded the invention of the double heterostructure laser and his seminal paper on the topic. He also worked on microwave device problems, and, in 1964, was the first to publish an explanation of the Gunn Effect. Since 1976, he has been with the University of California, investigating molecular beam expitaxy, materials research and solid-state physics.
He is a Fellow of the IEEE and the American Physical Society, and a Foreign Associate of the U.S. National Academy of Engineering. He has received numerous awards, including the EDS J.J. Ebers and IEEE Jack A. Morton Awards. A native of Germany, he received a doctorate in physics from Germany's University of Gšttingen, and holds honorary doctorates from the Technical University of Aachen, Germany; the University of Lund, Sweden; and from the University of Colorado. He received the 2000 Nobel Prize in Physics, and, in 2001, Germany's Bundesverdienstkreuz (Order of Merit). Dr. Kroemer is the author or co-author of more than 280 publications.
IEEE Robert N. Noyce Medal
"For strategic leadership in global semiconductor research and development."
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| Yoshio Nishi |
Dr. Yoshio Nishi has blazed an exceptional trail in the field of semiconductor research and development.
During his two decades of leadership with Toshiba, from 1962-1982, he pioneered such strategies as R&D and production collocation, and overlapping, staggered R&D teams, which resulted in highly efficient technology development and delivery, and led Toshiba to the top manufacturer of DRAM. His revolutionary concept of pre-competitive partnership continues to allow the semiconductor industry to share risk and cost. He also led the development teams responsible for the world's first mass-produced 1-Mbit CMOS DRAM, 256k CMOS SRAM. These advances led to the global shift in VLSI technology from nMOS to CMOS.
At Hewlett-Packard, from 1986-1995, his high-performance CMOS team developed 0.8 and 0.5 micron technologies, which enabled the company to commercialize the world's fastest CMOS RISC machines. As Senior Vice President and Director of the Research and Development Semiconductor Group at Texas Instruments, Dr. Nishi has continued to advance the industry through collaborative initiatives such as International Sematech, Seminconductor Research Corporation (SRC) including university research, and also brought TI up to the leading position in silicon technology.
An IEEE Fellow, Dr. Nishi has published more than 120 papers.
He has written and co-authored several books and holds more than
50 patents. His honors include the IEEE Jack A. Morton Award.