2003 IEEE International Electron Devices Meeting (IEDM)

The 49th annual IEEE International Electron Devices Meeting (IEDM) will be held 8-10 December, 2003 at the Hilton Washington and Towers, preceded by a full day of Short Courses on Sunday, 7 Dec. IEDM, the Electron Devices Society's annual technical meeting, is the world's premier conference for the presentation of advances in nano- and microelectronics-related devices and processes.
IEDM draws presentations and attendees from industry, academia, and governmental agencies worldwide. No other meeting presents as much leading work in so many different areas of microelectronics, encompassing both silicon and non-silicon device and process technology, optoelectronics; molecular electronics; and MEMS (MicroElectroMechanical System) technology.

Short Courses
This year's Short Courses are "Silicon+: Augmented CMOS Technology," organized by Tsu-Jae King at University of California, Berkeley; and "Interconnect Scaling: Materials and Systems," organized by Karen Maex of IMEC, Belgium.
The courses provide attendees with the opportunity to learn about emerging new areas and important developments, and to benefit from direct contact with lecturers who are experts in the field. They also include introductory material for general audiences. Advance registration is required.

Technical Program
The areas to be covered in this year's technical program are:

As the central core of IEDM, the CMOS Devices sessions will cover breakthroughs and advancements in device physics; novel MOS device structures (such as vertical, multiple-gate, and 3-D integrated FETs); CMOS scaling issues; high-performance, low-power and analog/RF devices; SOI, strained silicon and SiGe devices; noise behavior of MOS structures and device measurement and characterization.
CMOS and Interconnect Reliability will cover all areas of IC and device reliability, at both the front- and back-end of the manufacturing process. Specific topics will include hot carriers; gate dielectric wear-out and breakdown; process charging damage; latch-up, ESD and soft errors; bias temperature instabilities; reliability of high- and low-k materials, circuits and packaging; interconnect reliability, electromigration, and the impact of back-end processing on devices; manufacturing technologies for reliability; and reliability issues for memory, SOI and BICMOS technologies.
Displays, Sensors and MEMS sessions will cover critical devices, structures and integration for imaging, displays, detectors, sensors, and microelectromechanical systems (MEMS). A subset of these key topics includes CMOS imagers; CCDs; TFTs; organic, amorphous and polycrystalline devices; vacuum microelectronics; emissive displays; and sensors for chemical, molecular and biological applications. MEMS topics include resonators, switches and passives for RF applications; integrated sensors; micro-optical and micro-fluidic devices; and micro-power generators. Paper topics will encompass design, fabrication, reliability, theory and modeling.
Integrated Circuits and Manufacturing focuses on advances in integrated circuits; novel memory cell concepts; and full process integration for memory, logic and mixed-mode applications. Also, process architectures for performance and manufacturability of high-speed logic, advanced memories and multifunction integrated circuits; and integrated passives and low-power, low-noise analog, RF and mixed signal ICs. Topics also include IC manufacturing process control, failure analysis, yield enhancements and modeling.
Modeling and Simulation sessions will discuss analytical, numerical, and statistical approaches to the modeling of electronic and optical devices, their isolation and interconnection; physical and circuit models for devices and interconnects; and the modeling of fabrication processes and equipment, including simulation algorithms, process characterization, and parameter extraction.
Processing Technology sessions will cover front- and back-end process modules for fabrication of CMOS logic, memory, and BICMOS devices. Front-end topics will include substrate technologies; lithography; etching; isolation; thin dielectrics; high-k materials and metal electrodes for transistors and MIM capacitors; shallow junctions; RTP; silicides; and new materials. Back-end topics will include interconnect systems; low-k materials; contact and via processes; planarization, and multilevel interconnect design considerations.
Quantum Electronics and Compound Semiconductors will cover compound semiconductors (e.g. GaAs, InP, GaN, SiC and related alloys) with electronic and optoelectronic device applications, such as FETs, HBTs, high-power transistors, LEDs, lasers and external modulators. Also, devices with ballistic, quantum, and single-electron effects; spintronics, self-assembly, and nano- and molecular-scale devices; optoelectronic ICs and interconnects; and photonic bandgap structures.
Solid State Devices sessions will focus on discrete and integrated high power/current/voltage devices; Si and SiGe bipolar transistors; novel devices and technology; high-speed Si devices; integrated RF components including inductors, capacitors and switches; and single-electron devices in Si or SiGe materials systems. Research on other novel device and memory structures also will be presented, including nanotubes, nanowires, quantum dots, bioelectronics, and molecular devices on silicon, along with new methods of assessing silicon device and material performance.

Additional highlights
While the heart of IEDM is the technical program, other highlights will include:

The submission date for regular papers has already passed but a limited number of late-news papers will be accepted for presentation until September 12th, 2003. Limited financial assistance is available for students presenting papers.
For registration and other information, visit the IEDM 2003 home page at www.ieee.org/conference/iedm or contact Conference Manager Phyllis Mahoney, 16220 S. Frederick Ave., Gaithersburg, MD 20877, USA; tel. (301) 527-0900, ext. 103; fax (301) 527-0994; or email: phyllism@widerkehr.com
Washington, D.C. provides many attractions for visitors and we encourage attendees to explore them in the off hours of the conference. The IEDM organizers and committee members look forward to seeing you in December 2003.

H-S. Philip Wong
Publicity Chair
IBM T.J. Watson Research Center
Yorktown Heights, NY, USA

Clifford King
Publicity Vice Chair
Noble Device Technologies
New York, NY, USA