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HOT TOPIC Low-Drive-Voltage LiNbO3 40-Gb/s modulator |
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Abstract: We developed a 40 Gb/s LiNbO3 modulator with a drive voltage of 0.9 V at 40-Gb/s . This low drive voltage was achieved with a new design concept that featured a wide-gap, long CPW electrode. The modulator makes it possible to develop compact, low-power consumption and low-cost 40-Gb/s transmitters. Introduction This paper reports on the demonstrated performance of a 40-Gb/s LN modulator with a sub-1 V drive voltage [4]. The design concept of the device and experimental results are described. Design Forty-Gb/s modulators require an E/O bandwidth of over 30 GHz. However,
there is a tradeoff between bandwidth and drive voltage. Conventionally,
CPW electrodes with a narrow gap and short interaction length have been
used, resulting in a drive voltage of 5 V (single electrode) but at
a reduced bandwidth [3]. We propose novel CPW electrodes that reduce
both drive voltage and propagation loss in microwave signals.
Figure. 1 shows the structure of a dual-drive modulator [5]. The optical
waveguide was formed by Ti-diffusion into a Z-cut LiNbO3
substrate. We used parameters gap (S), interaction length (L), and electrode
thickness (t). First, we investigated the gap dependence of microwave
loss in relation to bandwidth and VpL (half-wave
voltage Vp) [4]. Microwave loss per unit
length was obtained from the electrical S21. The VpL
was calculated from overlap integral between the electric field and
optical power distribution. Using these data, we calculated the relationship
between Vp and S when L was defined to keep
bandwidth constant. There is a general understanding that S should be
decreased to reduce drive voltage, but our results indicated that when
the gap is wider, Vp can be decreased because
L can be increased. We found that an electrode with a wide gap and long
interaction length was more effective in decreasing the drive voltage
for 40-Gb/s modulation.
On the basis of these calculations, we designed a CPW electrode. To
achieve a broad E/O bandwidth, both impedance matching with an external
driving circuit and velocity matching between the light and microwave
are required. Impedance matching can be obtained when the characteristic
impedance of the CPW waveguide is nearly 50 W.
Velocity matching can be obtained when the effective refractive index
of the CPW electrode is equal to that of the optical waveguide, which
is 2.15 for TM input light. We calculated the characteristic impedance
(Z0) and the effective refractive index (nm) using
a finite-element method. Figure 2 shows the relationship between electrode
thickness and gap size when velocity matching and impedance matching
were obtained simultaneously. We defined L to maintain an S21 bandwidth
of 30 GHz and calculated the 40-Gb/s-drive-voltage shown at the top
of Fig. 2. Considering manufacture on a 4-inch LiNbO3 wafer,
we defined L as 60 mm. Then S and t were set at 50 mm
and 30 mm, respectively and we speculated
a drive voltage of less than 1.2 V.
Experiments The optical fiber to fiber insertion loss was 6 dB and the extinction ratio was 27 dB, which are suitable for practical use. Figure 4(a) shows the S-parameters and the optical response. The 6-dB bandwidth of S21 was 30 GHz. Since impedance matching was being obtained, the S11 was sufficiently low. An effective refractive index of 2.15 was estimated from the S21 phase. This means that velocity matching can be obtained. The 3-dB bandwidth of optical response was 28 GHz. Then we measured the eye diagrams at 40 Gb/s. Figure 4(b) shows the eye diagrams for the driving signal and optical output in a PRBS 231-1. Clear eye openings were obtained with a drive voltage of 0.9 V. The signals were directly supplied from a 40 Gb/s 4:1 multiplexer test set (Anritsu MP1801A) with no electrical amplifier.
[1] M. Doi, et al., Photonics in Switching 96 PThB1, pp. 172-173 (1996) [2] K. Noguchi, et al., IPR2000 IThH2-1, pp. 148-150 (2000) [3] M. M. Howerton, et al., IEEE Photon. Technol. Lett., Vol. 12, No.
7, pp. 792-794 (2000) [4] M. Sugiyama, et al., OFC2002 PD FB6 [5] K. Noguchi, et al., IEICE Trans.Electron., Vol.E79-C, No.1, pp. 27-31 (1996)
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