Hugh J. Barnaby
HUGH J. BARNABY
2000 Graduate Student Award
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Hugh J. Barnaby |
Hugh Barnaby graduated with a Bachelor of Arts degree in Mathematics and Philosophy form the University of California at Berkeley in 1992. In 1999, he received his Master’s of Science degree in Electrical Engineering at Vanderbilt University. His Master’s research focused on the characterization of ionizing radiation effects in lateral PNP bipolar junction transistors and the use of gate control as a technique for hardening these devices. Hugh is currently pursuing his PhD at Vanderbilt and he was recently awarded a NASA Graduate Student Research Program (GSRP) Fellowship. He and his research advisor, Ron Schrimpf, are currently interested in analyzing the effects of proton radiation on linear bipolar devices and circuits.
Hugh has been studying radiation effects in microelectronics for over six years. From 1993 to 1996, he was a staff scientist for the microelectronics division at Mission Research Corporation in Albuquerque, New Mexico. At MRC, he performed reliability analysis on VLSI digital and bipolar analog circuits. Hugh also was the principal layout engineer for two multi-chip module (MCM) designs and designed both hardware and software for several printed circuit boards. Two of his PCB designs are being used on the Microelectronics and Photonics Test Bed (MPTB) project to test selected bipolar devices and circuits in space. In 1995, he began researching the effects of ionizing radiation in bipolar analog technologies. Hugh continued to work in this area upon his arrival at Vanderbilt in 1996. While at Vanderbilt he has also worked on developing simulation code for modeling total dose defect buildup in semiconductor oxides and worked on threshold voltage stabilization in CMOS technologies. In 1997, as an intern at NEC Corporation in Tsukuba, Japan, Hugh performed temperature sensitivity analysis in bulk micro-machined capacitive pressure sensors.
Hugh has authored sixteen publications, and, of these, he has been the principle author on seven. His papers, “Modeling Ionizing Radiation Effects in Lateral PNP BJT’s with Non-uniform Trapped Charge Distributions” and “The Effects of Gate Bias on Defect Generation and Surface Recombination in Gate Controlled Lateral PNP Bipolar Junction Transistors,” received best paper nominations at the 1998 Heart Conference and the 1999 Nuclear and Space Radiation Effects Conference (NSREC), respectively.
Hugh Barnaby can be reached at Vanderbilt University, Electrical Engineering and Computer Science Department, VU Station B 351608, Nashville, TN 37235- 1608; Phone: +1 615 343-0507; Fax: +1 343-0601; E-mail: hbarnaby@vuse.vanderbilt.edu. Hugh was nominated for this award by Ron Schrimpf.