André Anders
NEW IEEE FELLOWS
Each year the IEEE Board of Directors elects no more than 0.1% of the full members to the grade of Fellow. Nominations are made by Senior Members or by Fellows and must be supported by at least six Fellows. After being reviewed and ranked by the appropriate IEEE Society the nominations are passed on to the Fellows Committee of the Board who then recommend a list of candidates for the Board’s consideration. The NPSS is pleased that the following members were elected by the Board this year.
|
André Anders |
André Anders, a native of Germany, is a Staff Scientist and the Group Leader of the Plasma Applications Group at Lawrence Berkeley National Laboratory (LBNL), Berkeley, California. He studied physics in Wroclaw, Poland, Berlin, Germany, and Moscow, Russia. He holds an M.S. degree (’84) and a Ph.D. degree (’87) in physics from Humboldt University, Berlin. He was a Staff Scientist at the Academy of Sciences in Berlin (1987-1991) and is affiliated with LBNL, Berkeley, since 1992. His research includes vacuum arc plasma and ion sources, gas plasma sources, ion implantation, plasma immersion ion implantation, and thin film synthesis. He is the author of A Formulary for Plasma Physics (Berlin: Akademie-Verlag, 1990), the editor and co-author of the Handbook of Plasma Immersion Ion Implantation and Deposition (New York: Wiley, 2000). He has published more than 100 papers in refereed journals and holds several patents. He is the Secretary of the Permanent International Scientific Committee of the International Symposia on Discharges and Electrical Insulation in Vacuum. He is a member of MRS, AVS, SVC and IoP (UK) and received the Chatterton Award (1994) and an R&D 100 Award (1997).
André Anders can be reached at the Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Mailstop 53, Berkeley, CA 94720; Phone: +1 510 486-6745 ; Fax: +1 510 486-4374 ; E-mail aanders@lbl.gov .
 |
John D. Cressler |
John D. Cressler received the B.S. degree in physics from the Georgia Institute of Technology, Atlanta, GA in 1984, and the M.S. and Ph.D. degrees in applied physics from Columbia University, New York, NY in 1987 and 1990, respectively. From 1984 to 1992 he was on the research staff at the IBM Thomas J. Watson Research Center in Yorktown Heights, NY, working on high-speed Si and SiGe bipolar technology. In 1992, he left the IBM Research Division to join the faculty of Auburn University, Auburn, AL. He is currently Philpott-Westpoint Stevens Distinguished Professor of Electrical and Computer Engineering and Director of the Alabama Microelectronics Science and Technology Center (AMSTC), a multi-disciplinary, state-funded research center. His research interests include SiGe devices and technology, radiation effects, noise, linearity, cryogenic electronics, SiC devices and technology, Si-based RF/microwave circuits, reliability physics, device simulation, and compact circuit modeling.
Dr. Cressler has published over 220 technical papers related to his research, written 4 book chapters, received five awards from the IBM Research Division, holds one patent. He was appointed an IEEE Fellow in 2001 for “contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.” He is currently an Associate Editor for the IEEE Journal of Solid-State Circuits. He has served on the Technical Program Committees of the ISSCC (1992-1998, 1999-2001), the BCTM (1995-1999), the IEDM (1996-1997), and the NSREC (1999-2000). He was the Technical Program Chairman of the 1998 ISSCC. He is currently on the Executive Steering Committee for the MTT Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. He was appointed an IEEE Electron Device Society Distinguished Lecturer in 1994. He was awarded the 1996 C. Holmes MacDonald National Outstanding Teacher Award by Eta Kappa Nu, the 1996 Auburn University Alumni Engineering Council Research Award, the 1998 Auburn University Birdsong Merit Teaching Award, the 1999 Auburn University Alumni Undergraduate Teaching Excellence Award, an IEEE Millennium Medal in 2000, and the 1994 Office of Naval Research Young Investigator Award for his SiGe research program. He has served as a consultant to IBM, Analog Devices, Northop-Grumman, ITRI/ERSO (Taiwan), Teltech, the National Technological University, Commercial Data Servers, SY Technology, Texas Instruments, and ON Semiconductor.
John Cressler can be reached at the Department of Electrical and Computer Engineering Department, 421 Broun Hall, Auburn University, AL 36849-5201; Phone +1 334 844-1872; Fax: +1 334 844-1809; E-mail: cressler@eng.auburn.edu .
 |
Parag K. Lala |
Parag K. Lala is the Mullins Chair Professor in the Department of Computer Science and Computer Engineering in University of Arkansas. He received an M. Sc. (Eng) degree in 1972 from King’s College, London, and a Ph.D. Degree in 1977 from The City University, London. In 1998 University of London awarded him a D. Sc (Eng) degree for contributions to digital hardware design and testing, and self-checking logic design. He is the author/co-author of more than 100 publications, and has also published five books. Morgan Kaufman has recently published his latest book Self-Checking and Fault-Tolerant Digital Design. He serves as an Associate Editor for IEEE Transactions on VLSI Systems. His Fellow citation reads “For contributions to the development of self-checking logic and associated checker design.” He is also a Fellow of the Institute of Electrical Engineers (IEE), United Kingdom.
Parag Lala can be reached at the Department of Computer Systems Engineering, 313 Engineering Building, University of Arkansas, Fayetteville, AR 72701; Phone: +1 501 575-5159; E-mail lala@engr.uark.edu
 |
Baruch Levush |
Dr. Baruch Levush, Research Physicist in the Electronics Science and Technology Division at the Naval Research Laboratory , has been elected a Fellow of the Institute of Electrical and Electronics Engineers. Dr. Levush was cited “For leadership in the development of theoretical and computational models of free electron radiation sources.”
Dr. Levush received his M.Sc in physics from Latvian University in Riga, Latvia in 1972 and his Ph.D. in physics from Tel-Aviv University, Israel in 1981. In 1985 Dr. Levush joined the University of Maryland, where his research focused on the physics of coherent radiation sources and the design of high-power microwave sources, such as gyrotrons, relativistic backward wave oscillators, free electron lasers and applications of microwave sources. In 1993 he became a Senior Research Scientist at the Institute of Plasma Physics at University of Maryland.
In 1995 Dr. Levush joined the Electronics Science and Technology Division at NRL as the head of the Theory and Design Section of the Vacuum Electronics Branch. The branch is the principal center for vacuum electronics research and development in the Department of Defense. Dr. Levush is actively involved in developing theoretical models and computational tools for analyzing the operation of existing microwave vacuum devices and in inventing new concepts for high power, high frequency coherent radiation sources. He is the co-author of over 100 journal articles. He was the recipient of the 1999 DoD Robert L. Woods Award for his role in the successful development of the high average power (10kW), W-band gyro-klystron.
Dr. Levush directs the DoD effort in developing a fully integrated suite of design codes for vacuum electron devices. These design tools will provide the basis for establishing simulation-based design methodology in place of the cyclic build-and-test methodology to achieve first-pass design success for vacuum electron devices. In other words, the intent is to establish a design capability of sufficient integrity and validity that computational design and optimization will yield a prototype meeting the designed specifications in its first embodiment.
Baruch Levush can be reached at Code 641, Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375; Phone: +1 202 767-0037; Fax: +1 202 767-1280; E-mail levush@mmace.nrl.navy.mil
 |
Timothy R. Oldham |
Dr. Oldham received his B. S. (Physics) from Michigan State University in 1969, his M. S. (Physics) from American University in 1975, and his Ph. D. (Physics) from Catholic University of America in 1982. He came to Harry Diamond Laboratories (now part of the U. S. Army Research Laboratory) as a summer student in 1967, and worked on a variety of radiation effects physics problems in electronic materials and devices, including the radiation response of metal-oxide-semiconductor (MOS) devices and materials. He conducted many of the early studies on radiation-induced charge recombination in oxides. Dr. Oldham was also the experimentalist on the team that produced what is usually called the McLean-Oldham model for charge collection for an ion passing through a semiconductor device. He was also the technical leader of the team, which developed the model for radiation-induced trapped charge, and which was presented in his latest book (Ionizing Radiation Effects in MOS Oxides, World Scientific Publishing, 1999). This model explains complex radiation effects observations, along with (at least in part) electron trapping, neutral centers, and a variety of other reliability effects in terms of a single defect complex.
At different times, Dr. Oldham has served as an advisor to several other agencies on radiation effects and reliability physics in semiconductor electronics, including the Defense Nuclear Agency (now the Defense Threat Reduction Agency), the U. S. Army Space and Missile Defense Command, DARPA, and NSA. Presently Dr. Oldham is Chief of the Micro-Devices Branch of the RF and Electronics Division of the Sensors and Electronic Devices Directorate of the U. S Army Research Laboratory. This branch performs materials and device research in support of wide band-gap semiconductor devices for high temperature and high power applications, high frequency III-V devices, and Si-based MEMS (microelectromechanical systems) devices. He has authored or co-authored more than 30 papers in peer reviewed journals and more than 25 other reports. He has served as Technical Program Chairman of the IEEE Nuclear and Space Radiation Effects Conference (NSREC) in 1990, and as NSREC General Conference Chairman in 1994. He has also served as Guest Editor of the IEEE Transactions on Nuclear Science for the NSREC conference issue for 1997-1999. He is also the Awards Chairman for the 2001 NSREC.
Dr. Oldham is married with four daughters. He is also a member of Toastmasters International (achieving the rank of Distinguished Toastmaster), a life member of the U.S. Chess Federation (B rating), and an enthusiastic long distance runner (veteran of 28 marathons, including eight in Boston and four in New York).
Tim Oldham can be reached at AMSRL-SE-RL, US Army Research Laboratory 2800 Powder Mill Rd., Adelphi, MD 20783; Phone: +1 301 394-5429; Fax: +1 301 394- 4576; E-mail: toldham@arl.army.mil
 |
Toshiyuki Shiozawa |
Toshiyuki Shiozawa received the B. E., M. E., and Ph. D. degrees in electrical communication engineering from Osaka University, Suita, Osaka, Japan in 1964, 1966 and 1969, respectively. In 1969 he joined the Department of Communication Engineering, Osaka University, where he is now a Professor.
He has been engaged in the research of relativistic electromagnetic theory for engineering-oriented applications, and theoretical study of free-electron lasers in the millimeter and submillimeter wave regions. His current research interests include nonlinear electromagnetics and bioelectromagnetics. For the engineering-oriented relativistic electromagnetic theory, he established the foundations of electromagnetic theory of rotating systems (Proc. IEEE, Vol. 61, pp. 1694-1702, Dec. 1973) and the macroscopic treatment of relativistic electron beams (Proc. IEEE, Vol. 66, pp. 638-650, June 1978). He also found many new unique phenomena in his pioneering work on guided waves in moving media, electromagnetic wave reflection and scattering by uniformly moving or rotating bodies, and total reflection at a boundary between relatively moving media. For the theoretical study of free-electron lasers, he contributed most significantly to better understanding of free-electron lasers and to enhancing their performance. Specifically, he clarified effects of finite transverse geometry, optimum beam configuration for efficient use of the electron beam, and shortening of operating wavelengths by loading dielectric materials. He also established a general systematic method to extract efficiently electromagnetic energy from the electron beam. Further, he demonstrated a feasibility of very compact free- electron lasers.
He has served as a member of the Editorial Boards of the IEEE Transactions on Microwave Theory and Techniques since 1987 and the Journal of Applied Physics since 1984. He served also as an Associate Editor of the IEICE (Institute of Electronics, Information and Communication Engineers) Transactions on Electronics from 1995 to 1999. He is the Chairman of the Technical Committee on Electromagnetic Theory in IEE Japan (Institute of Electrical Engineers of Japan). In 2000, he organized the Japan-China Joint Meeting on Optical Fiber Science and Electromagnetic Theory, contributing to the scientific exchange between two countries. He is a co-author of the books Topics in Advanced Electromagnetic Theory (Tokyo, Japan: Corona, 1988) and Electromagnetic Theory (Tokyo, Japan: Corona, 1998).
Dr. Shiozawa’s Fellow citation reads “For contributions to engineering-oriented relativistic electromagnetic theory and theoretical study of free-electron lasers.”
Dr. Shiozwa can be reached at the Department of Communication Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan; Phone: +81-6-6879-7732; Fax: +81-6-6879-7735; E-mail: shiozawa@comm.eng.osaka-u.ac.jp .