Each year the IEEE Board of Directors elects no more than 0.1% of the full members to the grade of Fellow. Nominations are made by Senior Members or by Fellows and must be supported by at least six Fellows. After being reviewed and ranked by the appropriate IEEE Society the nominations are passed on to the Fellows Committee of the Board who then recommend a list of candidates for the Board’s consideration. The NPSS is pleased that the following members were elected by the Board this year and extends its congratulations to all of them.

TOSHIO GOTO

Toshio Goto received his B. Eng., M. Eng. and D. Eng. degrees in electronics from Nagoya University, Nagoya, Japan,  in 1964, 1966 and 1969, respectively.  He was a research associate from 1969 to 1974, an assistant professor from 1974 to 1978, a associate professor from 1978 to 1986 and a professor from 1986 to 1994 in the Department of Electronics, and is now a professor in the Department of Quantum Engineering, Nagoya University.

He has been engaged in research on various gaseous lasers, laser diagnostics by laser spectroscopic techniques, and on applications of nonlinear optical fibers. This work has led  to more than 200 papers published in journals and about 200 papers presented at international conferences.  Notably, he clarified excitation mechanisms of an argon ion laser, metal vapor lasers and excimer lasers, and also developed practical devices based on those lasers.  He developed a new radical measurement method in plasmas by using infrared diode laser absorption spectroscopy (IRLAS) and succeeded in measuring the SiH3  radical in silane plasmas for the first time which is a dominant precursor of amorphous silicon thin film formation. In addition, by using IRLAS, he measured various radicals which play important roles in etching and CVD plasmas, and clarified unknown behaviors of those radicals in plasmas. Also he has recently developed a practical and portable device which generates a wavelength-tunable femtosecond light pulse in the extremely wide region of 1 to 2 µm by using nonlinear optical fiber. This technique is expected to be applied to optical communication, plasma processing and laser spectroscopy.

He has served as chairperson of the organizing committee for three international conferences and many domestic conferences in the fields of plasma processing and gaseous electronics. These conferences have contributed significantly to the development in these fields. In addition, he served as a vice president of the Japanese Society of Applied Physics from 2000 to 2002 and has been serving as a president of that Society since 2002. This Society has contributed to a great extent to the development of applied physics.

He served as a councilor of Nagoya University from 1994 to 1996 and has been serving as a dean of Graduate School of Engineering at Nagoya University since 2000.

His Fellow citation reads “For contributions to plasma processing, gaseous electronics and lasers.”

Toshio Goto can be reached at the Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan 464-8603; Phone: +81 52 789 3400; Fax: +81 52 789 3100; E-mail: gotou@nuee.nagoya-u.ac.jp.

RONALD H. HUESMAN

Ronald H. Huesman is presently a Senior Staff Scientist at the Center for Functional Imaging of the E.O. Lawrence Berkeley National Laboratory in Berkeley, California. He was born and raised in San Francisco and received a B.S. in Electrical Engineering in 1963 at the University of California at Berkeley. He spent four years in and attained the rank of captain in the United States Marine Corps, and then completed a Ph.D. in Physics in 1974 at the University of California at Berkeley. His work in the field of medical imaging began with development of reconstruction algorithms for tomography. His areas of specialization have been data acquisition and data analysis for PET with emphasis on quantitation and the propagation of statistical uncertainty. Accurate modeling of the physical and statistical aspects of data acquisition and the incorporation of these details into parameter estimation have been a central theme of his research. More recently he has studied the problems of gantry motion in dynamic SPECT and respiratory motion in cardiac PET.

Dr. Huesman’s Fellow citation reads: “For contributions to computed tomographic reconstruction, parameter estimation from dynamic reconstructed images, and related analysis.”

Ron Huesman can be reached at the Lawrence Berkeley National Laboratory, Nuclear Medicine and Functional Imaging, One Cyclotron Road #55-121, Berkeley, CA  94720; Phone: +1 510 486-4062; Fax: +1 510 486-4768; E-mail: RHHuesman@lbl.gov; Web page: http://cfi.lbl.gov/~huesman.

RALPH B. JAMES

Dr. Ralph B. James was born in Nashville, TN in 1953. He received a B.S. degree in Engineering Physics with highest honors from the University of Tennessee in 1976, a M.S. degree in Physics from Georgia Institute of Technology in 1977, and M.S. and Ph.D. degrees in Applied Physics from California Institute of Technology in 1978 and 1980. In 1981-83 he was a Eugene P. Wigner Fellow at Oak Ridge National Laboratory. He then moved to Sandia where he held an appointment as Distinguished Member of the Technical Staff until 2001. Currently Ralph is the Associate Laboratory Director for the Energy, Environment and National Security (EENS) Directorate with the U.S. Department of Energy’s Brookhaven National Laboratory. The Directorate encompasses Brookhaven’s Department of Environmental Sciences, Department of Energy Sciences & Technology, Department of Nonproliferation & National Security, Center for Data-Intensive Computing, and Research and Business Operations. In his current position, James oversees a wide range of basic and applied research. For example, the work includes such projects as aerosol chemistry and how it relates to global warming and air pollution, research in biological and chemical processes to develop better cleanup technologies, development of advanced ultra-clean fuels to increase energy supply and lower costs, and new sensor technology to detect nuclear, chemical, biological and explosive materials. Since September 11th, he has also chaired Brookhaven’s Counter-terrorism Working Group, which is conceptualizing and coordinating Laboratory efforts to develop technologies that can fight terrorism.

Dr. James’ research results are extensive and fundamental, and the impact of his work has been immediate and lasting. James has authored more than 300 scientific publications, served as editor of 11 books, and holds 5 patents. Among his honors, Dr. James won Discover magazine’s “Innovator of the Year” award for his contributions to the development of radiation detectors. He is a three-time winner of R&D Magazine’s R&D 100 Award, which honors the top 100 inventions of the year.  He won the awards for pioneering research to understand semiconductor radiation detectors and instrumentation, defects in electronic devices, nonlinear optics, and laser processing of materials. The output of his research on semiconductor radiation detectors, particularly cadmium zinc telluride devices, is finding numerous applications in the fields of gamma-ray spectrometers, astrophysics, and high-resolution imaging for medical uses.

In addition to his fellowship in the IEEE, James is a Fellow of both the American Physical Society and the International Society for Optical Engineering. He is also a member of the American Association for the Advancement of Science, Optical Society of America, Materials Research Society, Sigma Pi Sigma Physics Society, Tau Beta Pi Engineering Society and Sigma Xi. He is now an Associate Editor for the Journal of Crystal Growth and serves on the Advisory Boards of several organizations.

Dr. James is recognized for a long history of dedicated mentorship and for leadership contributions to professional societies. He has worked to rally the assets and talents of academia, government labs, U.S. industry, and several Russian and Ukrainian laboratories toward the common goal of developing advanced sensors. For example, Dr. James played a pivotal role in establishing a DOE user facility to fabricate and test radiation detectors. He launched over 20 cooperative research and development agreements with industry to co-develop and commercialize semiconductor radiation detectors and instruments. In addition, Dr. James served as co-chair of the 7^th, 8^th, 9^th, 10^th and 11^th International Workshops on Room-Temperature Semiconductor Radiation Detectors and Associated Electronics, which were sponsored by the IEEE, MRS or E-MRS. He also co-chaired four SPIE Conferences on Hard X-Ray and Gamma-Ray Detector Physics, an International Workshop on the Physics and Chemistry of II-VI Materials, the Conference on Semiconductor Detectors for Remote, Portable and In-Situ Radiation Measurement Systems, as well as six other workshops devoted to radiation sensing and imaging. In 2003 he will serve as General Chair for the IEEE Nuclear Science Symposium and Medical Imaging Conference.

Dr. James’ Fellow citation reads “For contributions to and leadership in the development of wide band-gap compound semiconductor devices used for detecting and imaging X- and gamma-ray radiation.”

Dr. James can be reached at Brookhaven National Laboratory, 40 Brookhaven Avenue, Upton, NY 11973-5000; Phone: (631) 344-8633; Fax: (631) 344-5584; E-mail: rjames@bnl.gov.

ALLAN H. JOHNSTON

Allan Johnston received B.S. and M.S. degrees in physics from the University of Washington, Seattle, Washington. He joined Boeing Aerospace Company in 1965, working on a variety of radiation effects problems in microelectronic devices, including studies of latchup and mechanisms for the latchup window effect, along with latchup from heavy ions in space. He performed some of the earliest studies of rebound effects in CMOS integrated circuits, demonstrating that circuit failure modes for low dose-rate conditions in space were distinctly different from the failure modes that occurred under accelerated test conditions. He also worked on development of hardened fiber optic receivers. In 1986 he became the manager of the Microelectronics Section of the Boeing High Technology Center where he continued studies of radiation effects, and also worked on microelectronics reliability and fault-tolerant design methods.  He joined the Jet Propulsion Laboratory in 1992, where he directs applied research in a variety of technical disciplines relating to space radiation effects. That work has included enhanced damage in bipolar integrated circuits at low dose rate; displacement damage in bipolar integrated circuits; displacement damage in light-emitting diodes, laser diodes and optocouplers; and single-particle effects in optoelectronics and highly scaled microelectronic devices.

He has authored or co-authored more than 80 papers in peer reviewed journals, and received the Outstanding Paper Award at the 1999 Nuclear and Space Radiation Effects Conference (NSREC).  He was appointed an IEEE Fellow in 2002 “For contributions to the understanding of space radiation effects in optoelectronics.”

He has served as NSREC Technical Program Chairman (1997), Awards Chairman (1996), Short Course Chairman (1993), and Local Arrangements Chairman (1988). He was the associate editor for the NSREC in 1982, and is the General Chairman for the 2003 NSREC.

Allan Johnston can be reached at the Jet Propulsion Laboratory, 4800 Oak Grove Drive, Mail Stop 303-220, Pasadena, CA  91109; Phone:  +1 818 354-6425; Fax +1 818 393-4559; E-mail allan.h.johnston@jpl.nasa.gov.

ANDREW NG

Andrew Ng is a native of Hong Kong. He received his B.Sc. degree from the Hong Kong University and his M.Sc. and Ph.D. degrees from The University of Western Ontario. Prior to joining the Department of Physics at the University of British Columbia in 1980, he was a National Research Council of Canada Postdoctoral Fellow in the Department of Electrical Engineering at the University of Alberta. As a young student, he was attracted to the field of plasma physics by the excitement of fusion research as a means to produce a virtually inexhaustible source of energy. As a researcher, he has been fascinated by the multidisciplinary nature of plasma science. He is particularly interested in the link between condensed matter physics and plasma physics.  He strives to understand the transition from a condensed matter to a plasma state in the regime for which he has coined the description “Warm Dense Matter”. This regime is also key to research in high pressure science, planetary science and inertial confinement fusion.

Andrew Ng is an active member of the Plasma Science & Applications Committee (PSAC). He is serving his second term on the PSAC EXCOM. He is a recipient of the C.A. McDowell Medal and Izaak Walton Killam Research Prize at U.B.C, and the IEEE Nuclear and Plasma Sciences Society Merit Award. He is also a Fellow of the American Physical Society. His IEEE Fellow citation reads: “For contributions to plasma science concerning warm density matter, femtosecond-laser matter interactions, and laser-driven shock waves.”

 Andrew Ng can be reached at the Department of Physics & Astronomy, University of British Columbia, Vancouver, B.C., V6T 1Z1, Canada; Phone: +1 604 822-3191; Fax: +1 604 822-5324; E-mail: nga@physics.ubc.ca.

EDL SCHAMILOGLU

Edl Schamiloglu was born in the Bronx, New York in 1959.  He was educated in the New York City public school system, graduating from the Bronx High School of Science in 1976. He received his B.S. and M.S. degrees from the School of Engineering and Applied Science at Columbia University in 1979 and 1981, respectively. He received his Ph.D. degree in Applied Physics from Cornell University in 1988. His dissertation research was performed in the Laboratory of Plasma Studies and studied the interaction of an intense, rotating proton ring with a magnetized plasma.

He has been on the faculty of the Department of Electrical and Computer Engineering at the University of New Mexico (UNM) since 1988, where he is presently the Gardner-Zemke Professor of Electrical & Computer Engineering. He also directs the Pulsed Power, Beams, and Microwaves Laboratory.  He was a lecturer at the U.S. Particle Accelerator School at Harvard University in 1990 and at MIT in 1997. He received the Sandia National Laboratories Research Excellence Award as a member of the Delphi/Minerva team studying long-range intense electron beam propagation in a laser-ionized plasma channel (1991), the UNM School of Engineering Research Excellence Award (as a junior faculty member in 1992 and as a senior faculty member 2001), and the title of Regents’ Lecturer for excellence in teaching, research, and service to the University and profession (1996-1999).

Dr. Schamiloglu’s research interests are in the physics and technology of charged particle beam generation and propagation, high power microwave sources, plasma physics and diagnostics, electromagnetic wave propagation, and pulsed power.  He is an Associate Editor of the IEEE Transactions on Plasma Science and is an elected member of the Administrative Committee of the IEEE Nuclear and Plasma Sciences Society. He is Coeditor of Advances in High Power Microwave Sources and Technologies (IEEE Press, 2001) (with Robert J. Barker), and is coauthor of the forthcoming  High Power Microwaves, 2nd Edition (Institute of Physics Publishing, 2003) (with Jim Benford and John Swegle). He has authored or coauthored over 40 refereed journal and 60 reviewed conference papers, and serves on the international program committees of numerous conferences in pulsed power, plasma science, and high power microwave sources.

His Fellow citation reads: “For contributions to the generation and propagation of intense pulsed charged particle beams.”

MARTY R. SHANEYFELT

Marty R. Shaneyfelt received his B.S. degree in Electrical Engineering from the University of Nebraska in 1984, and his M.S. degree in Electrical Engineering from the University of New Mexico in 1990. From 1984 to 1990 he worked on technology development and manufacturing of radiation-hardened integrated circuits for Allied-Signal Microelectronics Operation, Albuquerque, NM. Marty joined Sandia National Laboratories in 1990, where he is a Principal Member of the Technical Staff in the Radiation Physics, Simulation & Technology Department. At Sandia, he has been involved in numerous research activities associated with developing radiation-hardened bulk and SOI CMOS technologies, characterizing the physical mechanisms responsible for the radiation response of ICs, developing hardness assurance approaches, and addressing the limitations of using commercial technologies in radiation environments.

Early work that Marty performed at Allied-Signal Microelectronics Operation led to the development of the first multi-megarad hard polysilicon gate CMOS ICs.  More recently, his work at Sandia has led to the development of techniques for hardening shallow trench isolation oxides and silicon-on-insulator ICs. He is a co-inventor of the Body Under Source Field Effect Transistor (BUSFET), a device that mitigates the effects of radiation-induced charge trapping in SOI buried oxides on IC performance. Marty has also been actively involved in identifying the mechanisms for radiation-effects in MOS devices.  He developed the hole trapping/hydrogen transport (HT)² model for interface-trap buildup. This model explains the electric field dependence for interface-trap buildup. He was the first to show that preirradiation elevated temperature stresses can dramatically affect the radiation-induced response of transistors and ICs. This discovery, called the “burn-in effect”, has important implications for hardness assurance testing. He is presently investigating ways to eliminate or reduce enhanced low-dose-rate sensitivity and burn-in effects in linear bipolar devices.

Marty has authored or co-authored over 95 scientific publications on radiation effects in electronic devices, including papers that won Outstanding Conference Paper Awards for the 1995, 1997, 2000 and 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC) and the 1990 and 1995 Hardened Electronics and Radiation Technology (HEART) Conferences. He was also the recipient of an Industry Week Technology Award, and a Discover Magazine Technology Award. He has served as General Conference Chairman, Publicity Chairman, Local Arrangements Chairman, Session Chairman, and Finance Chairman for the IEEE NSREC.

His Fellow citation reads: “For contributions to the understanding of radiation effects in semiconductor devices and to the development of radiation-hardened technologies.”

Marty Shaneyfelt can be reached at Sandia National Laboratories, MS 1083, Albuquerque, NM 8185-1083; Phone +1 505 844-6137; Fax: +1 505 844-2991; E-mail: shaneymr@sandia.gov.

MANFRED K.A. THUMM

Manfred K.A. Thumm received the M.Sc. (Dipl. Phys.) and Ph.D. (Dr. rer. nat.) degrees in Physics from University of Tübingen, Germany, in 1972 and 1976, respectively. At the University of Tübingen he was involved in the investigation of spin-dependent nuclear forces in inelastic neutron scattering. From 1972 to 1975, he was Doctoral Fellow of the “Studienstiftung des Deutschen Volkes”.

In 1976, he joined the Institute for Plasma Research of the Electrical Engineering Department, University of Stuttgart, Germany, where he worked on RF production, RF heating and diagnostics of toroidal pinch plasmas for thermonuclear fusion research. From 1982 to 1990 his research activities were mainly devoted to electromagnetic theory and verifying experiments in the areas of components development for mode conversion and transmission of very high-power millimeter waves in overmoded waveguides and of antenna structures for RF plasma heating with microwaves.

In June 1990, he became a Full Professor at the Institute for Microwaves and Electronics, University of Karlsruhe, Germany, and Head of the Gyrotron Development and Microwave Technology Division in the Institute for Technical Physics of the Research Center Karlsruhe (Forschungszentrum Karlsruhe / FZK). Since April 1999, he has been the Director of the Institute for Pulsed Power and Microwave Technology of the FZK, where his current research projects are the development of high-power gyrotrons, dielectric vacuum windows, transmission lines and antennas for nuclear fusion plasma heating and industrial materials processing. He has authored/coauthored 2 books, 7 book chapters, more than 120 research papers in scientific journals, and more than 500 conference proceedings articles. He holds 10 patents on active and passive microwave devices.

Dr. Thumm was awarded the Kenneth John Button Medal & Prize 2000 in recognition of outstanding contributions to research in the field of millimeter wave and infrared physics. In 2001, he was awarded the title of Honorary Doctor, presented by the St. Petersburg State Technical University, Russia, for his contributions to the development and application of electron beam devices.

Dr. Thumm is vice chairman of Chapter 8.6 (Vacuum Electronics and Displays) of the Information Technical Society (ITG) in German VDE and a member of the German Physical Society (DPG). He is member (SM ‘94) of the IEEE societies Nuclear and Plasma Sciences (NPS), Electron Devices (ED), Microwave Theory and Techniques (MTT) and Antenna and Propagation (AP). His IEEE activities have been: Member of the Editorial Board/ Reviewer of IEEE-TPS since 1995 and of IEEE-MTT since 1998; Chairman of the “8^th ITG/IEEE Conference on Displays and Vacuum Electronics”, 29-30 April 1998, Garmisch-Partenkirchen, Germany; Co-Chairman of the IEEE/ITG-Workshop “Trends, Developments and Applications of Pulsed Power Switches”, 13 October 2000, Karlsruhe, Germany; Member of the Program Committee of the “2<^nd IEEE Int. Vacuum Electronics Conference (IVEC 2001)”, 2-4 April 2001, Noordwijk, The Netherlands and Organizer of the Session “Microwave Systems” at “The 29^th IEEE Int. Conference on Plasma Science”, 26-30 May 2002, Banff, Alberta, Canada.

He was elected an IEEE Fellow in 2002 “for contributions to the development and application of gyrotron oscillators, oversized microwave mode converters and transmission line components.”

Manfred K.A. Thumm can be reached at the Institute for Pulsed Power and Microwave Technology of the Research Center Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany; Phone: ++49 7247-82-2440; Fax: ++49 7247-82-4874; E-mail: Manfred.Thumm@ihm.fzk.de.