Each year the IEEE Board of Directors elects no more than 0.1% of the full members to the grade of Fellow. Nominations are made by Senior Members or by Fellows and must be supported by at least six Fellows. After being reviewed and ranked by the appropriate IEEE Society the nominations are passed on to the Fellows Committee of the Board who then recommend a list of candidates for the Board’s consideration. The NPSS is pleased that the following members were elected by the Board this year and extends its congratulations to all of them.

Paul K Chu
Prof. Paul K Chu was born in Hong Kong on October 19, 1956. He received his BS in mathematics from the Ohio State University in 1977, and MS and PhD in chemistry from Cornell University in 1979 and 1982, respectively. He joined Charles Evans & Associates in California in 1982 and assumed various technical and managerial positions. After working in the United States for 8 years, he started his own company in Asia and later became a visiting faculty member in the City University of Hong Kong. He became a full-time faculty member in 1996 and is presently Professor (Chair) of Materials Engineering in the Department of Physics & Materials Science in the City University of Hong Kong. He holds concurrent professorships in four Chinese universities: Department of Computer Science in Peking University (Beijing, China) since 1997, Department of Materials Science in Fudan University (Shanghai, China) since 1994, Department of Materials Engineering in Southwest Jiaotong University (Chengdu, China) since 1998, and Southwestern Institute of Physics (Chengdu, China) since 1998. He founded his second company, Plasma Technology Ltd., in 1998 and co-founded Chengdu Pulsetech Electrical Co. Ltd. with a Chinese partner in 2001.
He is a member of the Hong Kong Research Grants Council (RGC) Engineering Panel, member of the Editorial Board of Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials Atoms, guest editor of the ICOPS-2003 special issue of IEEE Transactions on Plasma Science, coordinator of the International Plasma Doping Users Group (PDUG), and voting member of the International Plasma-Based Ion Implantation Executive Committee. Prof. Chu is Fellow of IEEE, Fellow of the Hong Kong Institution of Engineers (HKIE), elected scientific member of the Bohmishe Physical Society (BPS), as well as member of the American Chemical Society (ACS), American Vacuum Society (AVS), Materials Research Society (MRS), and Minerals, Metals & Materials Society (TMS). He served on the International Advisory Board of the IEEE International Conference on Plasma Science (ICOPS) from 1996 to 1998 and the International Organizing Committee of ICOPS 2003, and has been a member of the International Executive Committee of the International Plasma-Based Ion Implantation Workshop since 1998. He was also co-chairman of a number of international conferences such as the International Conference on Materials and Process Characterization and International Workshop on Junction Technology. Prof. Chu is a technical advisor to the National 863 Materials & Surface Engineering R&D Center in Shenzhen, China. Prof. Chu was a member of the Technical Advisory Board of Silicon Genesis Corporation in Campbell, California and is consultant with several companies in the US and Asia.
His research activities focus on plasma science and engineering, ion implantation, thin films, surface modification, materials characterization, and semiconductor processing. Two of his research projects have been awarded the “Excellent” rating by the City University of Hong Kong and Hong Kong Research Grants Council. He is author or co-author of 9 book chapters, over 250 journal papers, and over 300 conference papers. He has 7 United States patents.
Prof. Chu is Manager of the varsity badminton and swimming teams of the City University of Hong Kong (CityU). The men’s badminton team from CityU has won the Hong Kong inter-collegiate championship for nine straight years. As an amateur athlete, he has won more than 100 medals in masters swimming competitions, co-held a Hong Kong masters swimming record, and has all the CityU staff swimming records in butterfly and breast stroke. He was also champion in CityU staff singles and teams badminton competitions.
Dr. Chu's Fellow citation reads “For contributions to the understanding of plasma implantation and deposition.”
Paul Chu can be reached at the City University of Hong Kong, Department of Physics and Material Science, 83 Tat Chee Avenue, Kowloon, Hong Kong, China; Phone: +852-27887724; Fax: +852- 27889549; E-mail: paul.chu@cityu.edu.hk

Bruce G. Danly

Dr. Danly received the B.A. degree in physics from Haverford College, and the Ph.D. degree in physics from the Massachusetts Institute of Technology, in 1978 and 1983, respectively. From 1983 to 1995 Dr. Danly was on the research staff at the MIT Plasma Fusion Center, first as Research Scientist from 1983-1992, and then as Principal Scientist from 1992-1995. While at MIT, Dr. Danly participated in research on gyrotrons, free-electron lasers, relativistic klystrons, and other high power RF source technologies for use in plasma heating and high-gradient RF linear accelerators. In 1995, he joined the Naval Research Laboratory as Head of the High Power Devices Section, Vacuum Electronics Branch, in the Electronics Science and Technology Division. Technologies under investigation in this branch include gyrotron amplifiers (gyroklystrons, gyrotwystrons, gyro-TWTs), free-electron lasers, TWTs, and klystrons. He has also made contributions to the development of high-power millimeter wave radar. Dr. Danly was named fellow of IEEE “for contributions to the development of high-power millimeter-wave sources for fusion, accelerator, and defense applications.”
Bruce Danly can be reached at the US Naval Research Laboratory, Electronics Science & Technology Division, Code 6843, 4555 Overlook Avenue SW, Washington, DC 20375; Phone +1 202 767-0032; E-mail; danly@nrl.navy.mil.

Gracie E. Davis

Gracie E. Davis received her B. S., M. S. and Ph. D. (1979) in electrical engineering from the University of California, Los Angeles. At the Naval Research Laboratory, her basic research on silicon-on-insulator (SOI) technology lead to selecting SIMOX (Separation by IMplanted OXygen) as the government’s radiation hardened electronics technology. Her SIMOX work was the first to demonstrate the parasitic transistor action of SOI devices and SOI’s inherent hardness to total dose, dose rate, single event upset and neutron irradiation.
While at Defense Nuclear Agency, Dr. Davis developed and managed the end-to-end system-level demonstration of optical target acquisition and track file formulation, which developed Operate Through (OT) technologies for military systems. Dr. Davis lead the capture of aboveground and underground radiation testing data for a Defense Satellite Communications Systems (DSCS) III-like satellite, focal plane arrays, materials, optics and electronics in an interactive data driven analysis tool permitting effective/affordable system-level hardening for future military systems.
Dr. Davis worked on the IEEE Silicon on Sapphire (SOS)/SOI Workshop Committee. She initiated best paper selection while conference SOS/SOI Workshop chairperson and assisted in the transition the SOS/SOI Workshop to SOI Conference within IEEE Electron Device (ED) Society.
Dr. Davis' Fellow citation reads “For Contributions to the development of radiation-hard electronics for military and space applications.”
Gracie Davis can be reached at Phone: +1 760 360-5564; E-mail gedavisva@aol.com

Gerd Muehllehner

Gerd Muehllehner was born in 1939 in Germany and came to the United States at age 17. He attended Georgetown University (B.S.) and graduated from the University of Michigan (Ph.D.) in 1966. His doctorate is in the field of Nuclear Physics.
After working for more than 10 years in industry in the field of Nuclear Medicine instrumentation at Searle Radiographics (now part of Siemens), he joined the Department of Radiology at the University of Pennsylvania, Philadelphia in 1979. During his tenure at the U. of Pennsylvania he was active in the development of instrumentation and techniques for Positron Emission Tomography (PET) used for imaging tumors and other metabolically active processes in vivo. After successfully developing a PET scanner at the University, he and his wife started a small company in Philadelphia, which merged in 1999 with ADAC Laboratories and more recently with Philips Medical Systems.
He continues to be active in research and development and continues his collaboration with a team of researchers at the University of Pennsylvania.
Gerd Muehllehner's Fellow citation reads “For contributions to positron emission tomography instrumentation and image reconstruction techniques.”
Gerd Muehllehner can be reached at Philips Medical Systems, 3619 Market Street, Philadelphia, PA 19104; Phone +1 215 243-2601; E-mail: gerd.muehllehner@philips.com.

Tadashi Nishimura

Tadashi Nishimura received his B.S., M.S. and Ph.D. degrees in electrical engineering from Osaka University in 1972, 1975, and 1978, respectively. In 1978, he joined Mitsubishi Electric Corporation, LSI Laboratory.
His research and development activities are in the field of SOI, bulk Si CMOS devices and memory devices, especially as to the SOI device/process technologies he has devoted himself more than 20 years.
In 1978 he started the research and development of ion implantation technology for CMOS device fabrication and he contributed to develop 64k DRAM and 16k SRAM and to transfer them to the manufacturing site. In addition from 1979, he started the research and development of SOI technology by using laser recrystallization technology to form a thin SOI layer and to fabricate CMOS transistors. From 1986 he added to the thin film SOI CMOS technology development by using SIMOX in his SOI activity. From 1981 to 1990, he engaged in the National Project, Three Dimensional ICs, under the management of MITI (Ministry of International Trade and Industry). At the same time he managed the polysilicon TFT technology development for an advanced low power/high density SRAM and it was successfully implemented in 4MSRAM and 8M SRAM that played an important role in the recent mobile phone market. From 1996 he managed the advanced process and simulation technologies, such as ArF lithography, Cu/low-k interconnect, BST high-k dielectric material for DRAM capacitors and TCAD. These technologies are used for 0.10um generation CMOS logic and embedded devices.
Presently he is the managing officer and the deputy executive general manager of the LSI Manufacturing Technology Unit, Renesas Technology Corporation. He was a visiting professor at Hiroshima University in 1990 and also a visiting professor at Osaka University in 1996 and 1997. Dr. Nishimura is a member of the Institute of Electronics and Communication Engineers of Japan, the Japan Society of Applied Physics, and the IEEE Electron Devices Society.
Tadfashi Nishimura's Fellow citation reads "for leadership in the development of advanced CMOS devices and process technologies."
Dr. Nishimura can be reached at the Renesas Technology Corporation, LSI Manufacturing Unit, 4-1 Mizuhara Itami Hyogo, Hyogo 666-8641, Japan: E-mail nishimura@renesas.com

Pavel Rehak

Pavel Rehak, a physicist at the U.S. Department of Energy’s Brookhaven National Laboratory, has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE). IEEE is a non-profit, technical professional association that is a leading authority in technical areas ranging from computer engineering to biomedical technology to aerospace.
“I am very honored to be elected as an IEEE Fellow of this prestigious institution,” Rehak said. “This nomination represents a very nice recognition of my past technical and professional achievements, which would not have been possible without the support and help of my colleagues at Brookhaven, the Max Planck Institute for Physics in Munich, CERN — the European Laboratory for Particle Physics — and last but not least, the Polytechnic Institute of Milan.”
The honor of being named a Fellow is reserved each year to no more than one-tenth percent of the total voting institute membership. IEEE offers Fellowships to members of the organization with an “extraordinary record of accomplishments in any IEEE field of interest,” as stated on the IEEE web site. Rehak, who was one of 260 members of IEEE chosen as Fellows for 2003, was cited for “contributions to the theory and development of particle and photon detectors.”
Rehak invented a device called the silicon drift detector with Emilio Gatti, a physicist at the Polytechnic Institute in Milan, Italy. This device has been used in many high-energy physics experiments – the most recent ones being the STAR detector at Brookhaven’s Relativistic Heavy Ion Collider (RHIC) and the future ALICE experiment at CERN – to detect charged particles. Silicon drift detectors are also used in electron microscopes to determine the nature of atoms in materials, and in astronomical projects such as the European Space Agency’s X-ray Multi-Mirror Newton (XMM Newton) satellite, the most powerful x-ray telescope ever placed in orbit.
Rehak’s silicon detectors won him a BNL Distinguished Research and Development Award, the highest honor in the Laboratory’s employee awards program, in 1997, and an IEEE Region 1 Award for contributions to particle physics research in 1999.
Rehak holds two Ph.D.s in physics: one from Charles University in Czechoslovakia, and the other from the Scuola Normale Superiore in Pisa, Italy. After working as a visiting scientist in the Kernforschungcentrum (Center for Nuclear Physics) in Karlsruhe, Germany, from 1972 to 1973, and as an assistant professor at Yale University from 1973 to 1976, he joined Brookhaven Lab in 1976, first in the Physics Department from 1976 to 1995, and then in the Instrumentation Division since 1995. Rehak holds three patents and has authored more than 180 publications in refereed scientific journals.
Editor's note: This article originally appeared as a Brookhaven National Laboratory news release.
Pavel Rehak can be reached at the Brookhaven National laboratory, Instrumentation Division, Bldg. 535B, Upton, NY 11973-5000; Phone: +1 631 344-3964; Fax: +1 631 344-5773; E-mail: rehak@bnl.gov.

Robert E. Reinovsky

Robert E. Reinovsky received his masters degree in electrical engineering in 1971 and his PhD in 1973 from Rensselaer Polytechnic Institute in the Electrophysics Department where his dissertation work focused on diagnostics for magnetically confined fusion plasmas.
From 1974–1986, Bob worked at the AF Weapons Laboratory (now the AF Research Laboratory) in plasma and pulsed power physics. At the AFWL, his principal interests were high-density plasma z-pinch implosions, radiation processes, plasma diagnostics, and pulsed power physics. Bob was responsible for developing and building four generations of the world-class SHIVA family of high-current, low-impedance pulsed power systems, and for developing and demonstrating world record fuse opening switch performance using these systems.
Techniques in ultra-high current, high explosive pulsed power developed in Los Alamos, starting in the 1950’s, caught his imagination. Bob joined Los Alamos National Laboratory in 1986 to continue work applying these techniques to high energy density physics and high energy density hydrodynamic problems in plasmas and condensed matter; and to compact pulsed power systems for national defense. Bob led the explosive pulsed power group at Los Alamos from 1990 to 1993 and then joined the Los Alamos High Energy Density Physics program as Project Leader for the Athena pulsed power project and then as Chief Scientist and Deputy Program Manager. Since 1998 he has been the Program Manager for the Pulsed Power Hydrodynamics (PPH) program, which sponsors the development and construction of the Atlas pulsed power system and the Atlas program of liner driven hydrodynamics experiments.
The end of the Cold War and the dissolution of the Soviet Union in 1991 raised significant national security issues about the stability of the Russian nuclear weapons laboratories and about the future of the world-class scientific staff of those institutions. Bob joined with a few Los Alamos colleagues to establish an active program of unclassified, basic, joint scientific work with these scientists. These efforts, starting in 1992 with pulsed power technology, have grown into a vigorous DOE program of joint activities in the areas of pulsed power, material dynamics and computational mathematics for the mutual benefit of both nations.
Bob is a Fellow of the IEEE, has been elected an Academician in the International Academy of Informatization, and has been awarded the Sakharov Medal by the All Russian Scientific Research Institute of Experimental Physics. His IEEE Fellow citation reads “For contributions to pulse power science and technology.”
Bob Reinovsky can be reached at the Los Alamos National Laboratory, Pulse Power Hydrodynamics, MS D420, P.O. Box 1663, Los Alamos, NM 87545; Phone: +1 505 667-8214; Fax: +1 505 665-2828; E-mail: bobr@lanl.gov.

Norman F. Roderick

Norman F. Roderick is Professor in the Department of Chemical and Nuclear Engineering at the University of New Mexico. He received a B.S. in Engineering Science from the U.S. Air Force Academy in 1962, and a M.S. and Ph. D. in Aerospace Engineering from The University of Michigan in 1964 and 1971 respectively. He started teaching at the University of New Mexico as an Adjunct Professor in 1978 while assigned to the Air Force Weapons Laboratory, and joined the faculty on a full time basis in 1982 after he retired from the Air Force. Prior to coming to UNM he was involved in research and development in aerospace engineering, rocket propulsion, plasma physics, and nuclear weapons effects simulation while in the Air Force. He also taught in the Aeronautics Department at the USAF Academy from 1971 to 1975. His present research interests are in theoretical and computational plasma physics related to producing and understanding high energy density plasmas, and in the application of plasmas for space power and propulsion. Specific areas include the dynamics and stability of high power Z pinches; high power plasma radiation sources and inertial confinement fusion; electromagnetically imploded solid liners and magnetized target fusion; and advanced spacecraft power and propulsion.
Dr. Roderick's Fellow citation reads “For contributions to the modeling and understanding of high energy density plasmas.”
Norman Roderick can be reached at the University of New Mexico, Department of Chemical and Nuclear Engineering, Farris Engineering Center, Albuquerque, NM 87131-0001; Phone +1 505 277-2209; Fax: +1 505 277-5433; E-mail: roderick@unm.edu.