| David
M. French
David M. French received his B.S. in physics from
Colorado State University in 2006. He is currently pursuing a Ph.D.
degree in nuclear science with emphasis on plasmas at the University
of Michigan, Ann Arbor.
David works in the Plasma, Pulsed Power, and Microwave Laboratory
at the University of Michigan. His research is both experimental
and simulation and his interests include laser based diagnostics
on z-pinch experiments, high-current cathode development for the
UM relativistic magnetron facility, and breakdown phenomena in high
power microwave systems.
Brad W. Hoff
Brad W. Hoff (S’04) was born in St. Louis, MO,
in 1976. He received a B.S. Degree in Physics from the U.S. Naval
Academy, Annapolis, MD, in 1999. He received M.S.E degrees in nuclear
engineering and electrical engineering from the University of Michigan
in 2006 and 2007, respectively, and is currently pursuing a Ph.D.
degree in nuclear engineering at the University of Michigan.
Upon graduation from the U.S. Naval Academy, he served five years
in the U.S. Navy. During his service in the Navy, he successfully
completed the Navy’s Nuclear Power Program and served as a
nuclear trained officer aboard the aircraft carrier USS Enterprise
(CVN 65).
His interests include high-power microwave sources and directed
energy technology.
Daniel Loveless
Daniel Loveless (Graduate Student Member, IEEE) received
the B.S. degree in electrical engineering from Georgia Institute
of Technology, Atlanta, GA in 2004 and the M.S. degree in electrical
engineering from Vanderbilt University, Nashville, TN in 2007.
He is currently a Graduate Research Assistant in the radiation effects
and reliability group in the Department of Electrical Engineering
and Computer Science at Vanderbilt University, Nashville, TN. While
at Vanderbilt University his work has included the design of single-event
hardened mixed-signal circuit topologies such as phase-locked loops,
as well as the development of various techniques for the analysis
of high-speed analog circuit topologies in radiation environments.
His research interests include CMOS devices and technology, mixed-signal
and analog circuit design, and radiation effects in CMOS microelectronics.
Mr. Loveless was awarded the Georgia Tech Alumni Association Scholarship
from 2000 to 2004. In addition to being a member of IEEE, he is
a member of the IEEE Nuclear Plasma and Sciences society, the IEEE
Circuits and Systems Society, and Eta Kappa Nu Electrical Engineering
Honor Society.
Jonathan A. Pellish
Jonathan A. Pellish (Graduate Student Member, IEEE)
received the B.S. degree in physics from Vanderbilt University,
Nashville, TN in 2004 and the M.S. degree in electrical engineering
from Vanderbilt University, Nashville, TN in 2006.
From 2002 to 2004, he was an Undergraduate Research Assistant in
the Department of Physics and Astronomy at Vanderbilt University,
Nashville, TN, working on heavy-ion- and photon-based materials
analysis as well as several projects in experimental high-energy
physics related to the BTeV experiment at Fermi National Laboratory,
Batavia, IL. He is currently a Graduate Research Assistant in the
radiation effects and reliability group in the Department of Electrical
Engineering and Computer Science at Vanderbilt University, Nashville,
TN. During the summer and fall of 2007, he held a Graduate-Level
Co-Op position at the IBM Austin Research Laboratory as part of
an IBM Ph.D. Fellowship. While at IBM, he worked on device- and
circuit-level characterization of radiation effects in IBM's 45
nm SOI process. His research interests include SiGe devices and
technology, radiation effects in CMOS, SOI, and SiGe microelectronics,
device-level simulation, and massively-parallel simulation of radiation
transport.
Mr. Pellish was awarded an IBM Ph.D. Fellowship for 2007-2008 academic
year. He is a member of the physics honorary society Sigma Pi Sigma.
In addition to being a member of the IEEE, he is also a member of
the American Physical Society and the American Association for the
Advancement of Science.
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