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The 2001 IEEE International Nuclear and Space Radiation Effects Conference will be held July 16-20 in Vancouver, B.C., Canada at the Westin Bayshore Hotel. The Conference features a technical program consisting of eight to ten sessions of contributed papers describing the latest observations in radiation effects, an up-to-date Short Course on radiation effects offered on July 16, a Radiation Effects Data Workshop, and an Industrial Exhibit. The technical program includes oral and poster sessions.
Supporters include the Defense Threat Reduction Agency, Sandia National Laboratories, Air Force Research Laboratory, Jet Propulsion Laboratory, and NASA-Goddard.
Papers describing nuclear and space radiation effects on electronic and photonic materials, devices, circuits, sensors, and systems, as well as semiconductor processing technology and techniques for producing radiation-tolerant (hardened) devices and integrated circuits, will be presented at this meeting of engineers, scientists, and managers. International participation is strongly encouraged.
We are soliciting papers describing significant new findings in the following or related areas:
Ionizing Radiation Effects
Materials and Device Effects
Displacement Damage
Single-event Charge Collection Phenomena and Mechanisms
Radiation Transport, Energy Deposition and Dosimetry
Processing-induced Radiation Effects
MOS, Bipolar and III-V Technologies
SOI and SOS Technologies
Optical and Optoelectronic Sensors and Transmitters
Methods for Hardened Design and Manufacturing
Modeling of Devices, Circuits and Systems
Particle Detectors and Associated Electronics for High-energy Accelerators
Cryogenic Temperature Effects
Novel Device Structures, such as MEMs
Single-event Phenomena in Devices and Circuits
Characterization and Modeling of Space and Terrestrial Radiation
Environments
Spacecraft Charging
Testing Techniques, Guidelines and Hardness Assurance Methodology
Radiation Exposure Facilities
The Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation–hardened systems. Papers describing new simulation or radiation facilities are also welcomed.
Information on submission of summaries to the 2001 IEEE NSREC can be found at www.nsrec.com. The deadline for submitting summaries is February 2, 2001
Attendees will have the opportunity to participate in a high-quality one-day short course on Monday, July 16. We are currently in the process of putting together what we believe will be a memorable Short Course focused on exciting new developments in radiation effects in advanced technologies. As new technologies and processes are developed and become mainstream for terrestrial applications, insertion into spacecraft systems is desirable to take advantage of performance and density improvements. Unfortunately, these new technologies can bring their own radiation hardness assurance challenges to the systems designer and parts engineer.
The 2001 Short Course will start with a morning devoted to silicon-on-insulator (SOI) technology. This important technology is finally starting to emerge in the commercial marketplace, and has some unique advantages for operation in radiation environments. Our first speaker, Jean-Pierre Colinge (University of California at Davis), is a recognized expert in the field and will cover the basics of SOI device physics to bring us all up to speed on what "makes SOI tick." With a solid background on SOI operation in normal environments behind us, Olivier Musseau (CEA) will cover the specifics of radiation effects in SOI devices and circuits. This section of the course will include SOI performance from a perspective of both total dose and single-event effects. The third session will be taught by Ron Schrimpf (Vanderbilt University), who will discuss radiation effects and hardness assurance issues for advanced bipolar technologies. This has been a topic of a great deal of recent interest following the discovery of enhanced total-dose degradation in low dose rate environments. Finally, our Short Course will conclude with a session by Steve Buchner (SFA/NRL), who will bring us up to speed on the topic of single-event transients in high-speed circuits. Single-event transients are expected to become a serious concern with ever increasing clock speeds in advanced commercial technologies.
General Chair: Marty R. Shaneyfelt Sandia National Laboratories, 505-844-6137
Technical Program: Janet L. Barth, NASA- Goddard, 301-286-8046
Local Arrangements: Joseph M. Benedetto, Aeroflex UTMC, 719-594-8415
Short Course: Paul E. Dodd, Sandia National Laboratories, 505-844-1447
Publicity: Teresa Farris, Aeroflex UTMC, 719-594-8035
Finance: Mark A. Hopkins, The Aerospace Corporation, 505-846-7228
Awards: Timothy R. Oldham, US Army Research Laboratory, 301-394-5429
Industrial Exhibits: Darrell Craig, Intersil Corporation, 321-724-7008
Guest Editor: Michael A. Xapsos, Naval Research Lab, 202-767-5467