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Invest
in the Profession: Make a Nomination for the Solid-State Circuits Award
Awesome
is how young members see the pioneering breakthroughs that have given
solid-state circuits the technical and
economic impact it has today. How can so many engineers design million-transistor
circuits with confidence and get products to market on time? What technical
advances and what algorithms are almost invisibly intuitive in our thinking
and software processes? How do we know where to start, where it is still
too risky invest time, or what is too risky to tweak? If you can remember
a decade or more ago when you dreamed about the work your team accomplishes
today, you can remember the seminal ideas that allowed circuits to evolve
a hundredfold. You could be a nominator for the IEEE Solid-State Circuits
Technical Field AwardÑthe Institutes highest honor for outstanding contributions
in our field.
Since the 1980s this
award has reflected the progress of the technology. The history of the
field is the textbook for tomorrows engineers. How is it that engineers
can design faster, smaller, and denser circuitry every year? Look back,
look around. Some of the ideas and authors are probably on the Solid-State
Circuits Digital Archive DVD.
The Solid-State Circuits
Technical Field Award consists of a bronze medal, a certificate, and a
$10,000 cash prize, and is presented at the ISSCC. It honors an individual,
or team of up to three, for outstanding contributions in the field of
solid-state circuits, as exemplified by enhancement to technology, benefit
to society, and professional leadership. The nomination form is available
to download online: http://www.ieee.org/
about/awards/noms/solidnom.htm.
Guidelines, also available
online, emphasize the importance of the nominees accomplishments, the
quality of the nomination itself, and the quality of the supporting endorsement
letters. The true merits of a candidate need to be conveyed through the
nomination and endorsement paperwork. The deadline for receipt of nomination
materials (including nomination form and the supporting letters) is 31
January 2002.
For further information,
to coordinate your efforts with others, or to determine if a nomination
is already in progress, please contact Dick Jaeger, the Chair of the SSCS
Awards Committee, at jaeger@eng.auburn.edu.
Past
Solid-State Circuits Award Recipients
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2002
Chenming
Hu
Taiwan Semiconductor Manufacturing
Company
Hsin-Chu, Taiwan
Ping K. Ko
Authosis, Inc.
Quarry Bay, Hong Kong
For BSIM3 modeling and development work
2001
No award
2000
Robert H. Krambeck
Tandem Computers (Retired)
Cupertino, CA
Hung-Fai (Stephen) Law
Alaris, Inc.
Fremont, CA
For pioneering the introduction and
implementation of domino CMOS logic
1999
Kensall D. Wise
University of Michigan
Ann Arbor, MI
For pioneering contributions to the
development of solid-state sensors, circuits,
and integrated sensing systems
1998
Nicky Chau-Chun Lu
Etron Technology Inc.
Hsinchu, Taiwan
For pioneering contributions to high speed
dynamic memory design and cell technology
1997
Robert W. Brodersen
University of California
Berkeley, CA
For contributions to the design of integrated
circuits for signal processing systems
1996
Rudy J. Van De Plassche
Philips Research Labs
Eindhoven, The Netherlands
For pioneering contributions to the design
of integrated circuits for data conversion
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1995
Lewis M. Terman
IBM - T. J. Watson Research Center
Yorktown Heights, NY
For leadership in the field of MOS devices and
circuits for semiconductor memories
1994
Paul R. Gray
University of California
Berkeley, CA
For contributions to analog integrated circuit
design,especially for MOS switched capacitor circuits
1993
Kiyoo Itoh
Hitachi, Ltd.
Tokyo, Japan
For technical contributions to folded data-line
circuits and the development of high-density
dynamic RAMs
1992
Barrie Gilbert
Analog Devices
Beaverton, OR
For contributions to non-linear analog
signal-processing circuits
1991
Frank Wanlass
Standard Micro Systems
San Jose, CA
For the invention of Complementary MOS
(CMOS) Logic Circuitry
1990
Toshiaki Masuhara
Hitachi, Ltd.
Tokyo, Japan
For pioneering contributions to NMOS
depletion-load circuits and the development
of high-speed CMOS memories.
1989
James D. Meindl
Georgia Institute of Technology
Atlanta, GA
For contributions to solid-state circuits
and solid-state circuit technology
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