Contributions are solicited on recent developments in group IV photonic devices operating at wavelengths within the wide spectrum ranging from the ultraviolet to the very far infrared (terahertz). The conference will also accept papers that describe monolithic, or quasi-monolithic, integration of compound semiconductor structures upon silicon.
Topics comprehend but are not limited to:
- Lasers, emitters, amplifiers, wavelength converters
- Detectors, imagers, modulators, switches, physical sensors
- Devices for the UV, Vis, near IR, mid IR, far IR, and THz
- Devices using C, Si, Ge, Sn in the active regions
- Superlattice, quantum well, quantum-wire, and quantum-dot
photonic devices
- Photonics on a virtual substrate, relaxed buffer or compliant
substrate
- Si-based photonic bandgap structures and nanodevices
- Group IV nanocrystal photonic devices
- Complex dielectric systems
- Rare-earth-activated infrared emitters
- GeSn, SiGeC, SiGeSn alloy heterostructures used in devices
- Free-space components on silicon
- Waveguided components on silicon, add/drop, etc
- Monolithic optoelectronic integration on silicon
- SOI, SOS, SiON, and silica photonic components and circuits
- Carbon nanotube photonic devices
- Optical micro electro-mechanical system
- Photovoltaics
All colleagues interested in the recent progresses and future challenges are invited to participate in GFP 2008 and encouraged to submit their technical contributions.
