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Event Topics
Optoelectronics
The optoelectronics committee is pleased to announce the presentation of five invited talks at IPRM 2006 ranging from the most recent developments in very large scale InP photonic integrated circuits, to the latest in InP based lasers, through photonic digital-to-analog converters, to novel low-noise detectors and phototransistors. Twenty three contributed papers and eight posters detail the most recent research in the InP Optoelectronics Area.
Electron Devices
Electron device sessions include an HBT session covering 100+ GHz digital logic and competing technologies for 500 GHz HBTs. There are papers exploring HEMTs as an alternative for post-Si-CMOS logic and for mm-wave amplification.
Nanoelectronic, Nanophotonic and Photonic-Bandgap Devices
The Nanoelectronic, Nanophotonic Photonic Bandgap Devices session will present important advances in photonics and electronics based on nanostructured semiconductors. The session includes four invited talks in the areas of photonic crystals, single photon sources, quantum information processing, and future nanoelectronics. The contributed talks cover a variety of topics including quantum dot lasers at 1.5µm, lasing properties of photonic crystal structures, nanoelectronic sensors, and low power-consumption high-frequency RTD circuits.
Processing and Materials Integration
The Processing Materials Integration Session includes invited and contributed talks on a variety of topics including: integration of photonic devices with SOI, QCLs, ultrafast all-optical switches, RTD/HEMT ICs, DHBTs for mixed signal ICs, bandgap engineering techniques, and ICP etching.
Epitaxy
The advancement of epitaxial growth technology is key to the realization of novel structures for scientific research as well as high performance devices for commercial applications. The Epitaxy Session for this year’s IPRM will focus on the materials science and epitaxial processes for state-of-the-art optoelectronic and electronic devices. Our invited speaker for the optoelectronic epitaxy session, Russ Dupuis from Georgia Institute of Technology, will give overviews on the growth of InAs/GaSb type-II superlattices for mid-IR applications. This session will also include papers on InGaAsN and InGaAsP and TlInGaAs/TlInP-based materials. For the electronic device epitaxy session, the invited paper by Abdullah Cavus from NGST will discuss the epitaxial growth of metamorphic 6.0 Å HBTs for ultra-low power application. The 2nd invited speaker, Guy Jacob from Inpact, will address the recent advance in InP substrate for epitaxial growth. This session will also include papers on re-growth of transistors on implanted InP and new MOVPE precursors for high quality electronic materials. Our last session is on the growth of high density quantum dots for lasers and semiconductor optical amplifier applications. The invited presentation by Kouichi Akahane from NICT will be on the growth of highly ordered and highly stacked, self-assembled QDs. This session will also include papers on the growth of QDs on pre-patterned substrates and the dependence on the photoluminescence characteristics on the growth conditions.
Characterization and Bulk Materials
Novel techniques for crystal growth and characterization are discussed in this session. Recent applications include InP photonic crystals, pattern-structured materials growth for THz-wave generation, and state-of-the art characterization techniques such as spectral cathodoluminescence. Recent developments in controlling deep-level defects in semi-insulating InP will be presented.
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For more information:
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Mary S. Hendrickx
Conference Administrator
Phone + 1 732-562-3897
Fax + 1 732-562-8434
m.hendrickx@ieee.org
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IEEE/LEOS
445 Hoes Lane
Piscataway, NJ 08855-1331
USA
www.i-leos.org |
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