Nanostructures & Novel Materials

Nanostructures & Novel Materials

This subcommittee is interested in the application of nanoscience and technology to compound semiconductor devices and materials for emerging microelectronic and photonic applications.  New material synthesis and growth approaches for heteroepitaxy of lattice mismatched materials or growth of compound semiconductors on elemental semiconductors are of interest.  For example nanoepitaxy or periodic misfit dislocations have been successfully employed to grow novel III-N or III-V nanostuctures on Si and other substrates.  Novel photonic devices using quantum wires or quantum dots, within tightly confined photonic crystal or high index contrast nanocavities have enabled photonic quantum information devices.  Combining electronic and photonic confinement using nanopatterned metal films and semiconductor structures has also provided new device approaches leveraging plasmonic technologies. 

Topics of interest for this subcommittee include:

• Engineered quantum dots and quantum wires
• Heteroepitaxy of mismatched III-Vs
• Heteroepitaxy of III-Vs on Si and Ge
• Vertical nanowires
• Photonic crystals and nanodevices with strong photon confinement
• Nanoelectronic devices
• Plasmonics