MONDAY, 08 NOVEMBER 2004
Caribbean Ballroom 1
1:30 PM - 3:00 PM
Session MH: APDs and Photon Counting
Session Chair: Mark A. Itzler, Princeton Lightwave, Cranbury , NJ , USA |
MH1 1:30 PM - 2:00 PM (Invited)
Photon Counting and Timing Detector Modules for Single-Molecule Spetroscopy and DNA Analysis,
S. Cova, M. Ghioni and I. Rech , Politecnico di Milano, Milano, Italy Compact detector modules based on planar epitaxial Single Photon Avalanche Diodes (SPAD) working with monolithic active quenching circuits (i-AQC) attain 45% peak detection efficiency, dark-counting rate less than 10c/s, photon timing better than 60ps FWHM.
MH2 2:00 PM - 2:15 PM
Study of Dark Counts in Geiger Mode In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As SACM APDs, G. V. Karve, S. Wang, F. Ma, X. Li, J. C. Campbell , University of Texas at Austin, Austin, TX, USA , R. Ispasoiu , Optonics, Mountain View, CA, USA , D. S. Bethune, B. Risk , IBM Research, San Jose, CA, USA , G. S. Kinsey, J. C. Boisvert, T. D. Isshiki and R. Sudharsanan , SpectroLab, Sylmar, CA, USA Dependence of dark count rate in an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As avalanche photo detector operated in Geiger mode is studied. The experimental observations are explained using a model for band-to-band tunneling in the multiplication layer.
MH3 2:15 PM - 2:45 PM (Invited)
Detectors for Ground-based Reception of Laser Communications from Mars, A. Biswas and W. H. Farr , Jet Propulsion Laboratory, Pasadena, CA, USA Ground-based receivers at Earth require single photon counting detectors with 30% photo-detection efficiency (PDE) at 1.060-µm, for optical communications from deep space. Design drivers and detector selection criteria are discussed.
MH4 2:45 PM - 3:00 PM
Breakdown Characteristics of In 0.52 Al 0.48 As-InP Heterojunction APDs, M. M. Hayat , University of New Mexico , Albuquerque , NM , USA An analytical model for the breakdown probability in thin heterojunction APDs is used in designing an optimized bandgap-engineered In 0.52 Al 0.48 As-InP APD. Through manipulating the carrier dead space, the model predicts breakdown-probability versus excess-breakdown-voltage characteristics that are comparable to much thicker and higher breakdown-voltage homojunction APDs.
3:30 PM - 5:15 PM
Session MP: CMOS Compatible Photodetectors
Session Chair: M. Selim Unlu, Boston University , Boston , MA , USA |
MP1 3:30 PM - 4:00 PM (Invited)
Silicon based Resonant Cavity Enhanced Photodetectors for Optical Interconnects, M. K. Emsley , Analog Devices Inc., Wilmington , MA , USA Efforts in fabricating Si and Ge resonant cavity enhanced photodetectors on reflecting Si substrates will be reviewed. These devices offer comparable performance to InGaAs photodetectors and the possibility of integration with Si receiver circuitry.
MP2 4:00 PM - 4:15 PM
High Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550 nm Operation, O. Dosunmu , Boston University, Boston, MA, USA , D. D. Cannon , Massachusetts Institute of Technology, Cambridge, MA, USA , M. K. Emsley , Analog Devices Inc., Wilmington, MA, USA , L. C. Kimerling , Massachusetts Institute of Technology, Cambridge, MA, USA and M. S. Unlu , Boston University, Boston, MA, USA We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3dB bandwidths of more than 12 GHz at 3V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of ~1540 nm.
MP3 4:15 PM - 4:30 PM
A 20GHz, Tensile Strained Ge Photodetector on Si Platform with Broad Detection Spectrum for Optical Communications and On-Chip Applications, J. Liu, J. Michel, W. Giziewicz, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, D. Pan , Massachusetts Institute of Technology, Cambridge, MA, USA , J. Yasaitis , Analog Devices Inc., Cambridge, MA, USA , K. Wada and L. C. Kimerling , Massachusetts Institute of Technology, Cambridge, MA, USA This paper presents a 20GHz Ge photodetector on Si platform that covers a broad detection spectrum from 850-1600nm. This device has promising applications in high capacity optical communications and on-chip Si optoelectronic circuits.
MP4 4:30 PM - 4:45 PM
Waveguide Coupled CMOS Photodetector for On-Chip Optical Interconnects, A. M. Raza , Colorado State University, Fort Collins, CO, USA A novel, truly CMOS compatible, waveguide coupled, high-speed photodiode for on-chip optical clock distribution is designed using analytical calculations, electro-optical simulations, and experimental analysis. Results from test devices and waveguides currently under fabrication in the Agilent 0.35 µm CMOS process will be reported.
MP5 4:45 PM - 5:00 PM
Photodetection with Silicon Pyramidal Microdischarge Devices, N. P. Ostrom and J. G. Eden , University of Illinois at Urbana-Champaign, Urbana, IL, USA The performance of silicon pyramidal microdischarge photodetectors has been characterized in detail in the visible and near-infrared. This new, semiconductor/plasma hybrid device exhibits a peak photosensitivity of > 3.5 A/W at 900 nm.
MP6 5:00 PM - 5:15 PM
Demonstration of CMOS Readout Technique with Pixel-Level Code Modulation for 2-D Active Imaging, J. A. Garcia, F. Kiamilev, M. S. Sarmiento , University of Delaware, Newark, DE, USA and W. Lawler , US Army Research Lab, Adelphi, MD, USA A hybrid test-system consisting of a 0.5 µ m-CMOS test chip and a custom printed circuit board has been implemented to demonstrate the principle of operation of orthogonal photodetector encoding as an alternative for readout ICs. Test results show it to be a viable option for highly-integrated active and passive imaging systems.
