Topic Areas


Semiconductor Lasers

The subcommittee on Semiconductor lasers solicits papers describing recent advances in both the design, fabrication, and performance of diode lasers, as well as their systems applications. Relevant topics include all aspects of visible lasers, high-power lasers, and laser arrays, high-speed lasers, long-wavelength lasers, single-frequency lasers, tunable lasers, and new materials, processing, and manufacturing techniques for diode laser fabrication and packaging. In addition, a wide spectrum of diode laser applications including printing, optical storage and recording, communications, material analysis, and other systems using diode laser technology will be included in the program.


Committee Members:

Chair: Catrina Bryce
University of Glasgow, UK
Kent Choquette
University of Illinois at Urbana-Champaign, USA
Claire Gmachl
Princeton University, USA
Guillaume Huyet
Tyndall National Institute, Ireland
Anders Larsson
Chalmers University of Technology, Sweden
Yong Hee Lee
Korea Advanced Institute of Science and Technology, Korea
Luke Lester
University of New Mexico, USA
Yoshiaki Nakano
University of Tokyo, Japan
John O'Brien
University of Southern California, USA
Gary Smith
MIT Lincoln Laboratory, USA
Hark Tan
Australian National University, Australia
Tsuyoshi Yamamoto
Fujitsu Laboratories Ltd., Japan



Semiconductor Lasers Invited Speakers:

Chaotic Microcavity Lasers
Hui Cao, Northwestern University, USA
Mode Locked Lasers
Peter J. Delfyett, University of Central Florida, USA
High Power Diode Lasers
Christoph Harder, Switzerland
High Power Semiconductor Disk Lasers
Stefan Illek, Osram Opto Semiconductors, Germany
Nano-Apeture VCSELS
Fumio Koyama, Tokyo Institute of Technology, Japan
Mid-Infrared Lasers and Molecular Spectroscopy Applications
Patrick J. McCann, University of Oklahoma, USA
Recent Development on Silicon Raman Lasers and Amplifiers
Haisheng Rong, Intel Corporation, USA
1.3 µm Emitting Self Assembled Quantum Dot Lasers
Peter M. Smowton,Cardiff University, UK
High Speed InGaAs VCSELs
Naofumi Suzuki, NEC Corporation, Japan
THz Quantum Cascade Lasers
Benjamin S. Williams, Massachusetts Institute of Technology, USA



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Exhibitor Contract Agreement LEOS 2006 Registration Form

Exhibitor Contract Agreement LEOS 2006 Exhibit Reservation Contract

Exhibitor Contract Agreement LEOS 2006 Short Course Registration Form


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