Photodetectors & Imaging

Invited Speakers:

High-Sensitivity Photodetectors in CMOS Technology for 3-D Imaging
Gian-Franco Dalla Betta, University of Trento, Italy

Photodiode Operating at 2 µm Wavelength using InGaAsN Layer on InP Substrate
Hideki Fukano, NTT Corporation, Japan

Highly Reliable Guardring-free InAlAs Avalanche Photodiodes
Eitaro Ishimura, Mitsubishi Electric Corporation, Japan

InP-based Single Photon Avalanche Diodes
Mark A. Itzler, Princeton Lightwave Inc., USA

Monolithic Ge/Si Avalanche Photodiode Receiver for 10Gb/s 1.3µm Application
Yimin Kang, Intel Corporation, USA