Dimitri A. Antoniadis

Among his many contributions to the field of silicon process modeling, Dr. Dimitri A. Antoniadis played a key role in developing the SUPREM I and II integrated circuit fabrication process simulation programs while at Stanford University. SUPREM I and II became the first widely used process simulation tools in industry and the basis of programs in use today. After joining the faculty of the Massachusettes Institute of Technology (MIT), he pioneered experimental field-effect nanostructures that led to groundbreaking work in lateral surface superlattice and single-electron transistors. Currently the Ray and Maria Stata chair in Electrical Engineering at MIT, he continues his pioneering work in silicon-on-insulator MOSFET technology. Dr. Antoniadis is the author or co-author of more than 200 technical aritcles.

A Fellow of the IEEE, his awards include the IEEE Paul Rappaport Award and the Solid State Science and Technology Young Author Award of the Electrochemical Society.