IEEE David Sarnoff Award Recipients
2008 - JAMES COLEMAN
University of Illinois at Urbana-Champaign
Intel Alumni Endowed Chair in Electrical and Computer Engineering
Urbana, IL, USA
“For leadership in the development of highly reliable strained-layer lasers”
2007 - UMESH K. MISHRA
Professor and Associate Dean, College of Engineering
University of California
Santa Barbara, CA
“For development of gallium nitride electronics”
2006 - MAU-CHUNG F. CHANG
Professor, Electrical Engineering Department, UCLA
Los Angeles, CA
"For development of HBT power amplifiers leading to their commercialization in wireless communications."
2005 - PIERRE TOURNOIS
Co-Founder and Scientific Director, Fastlite Company
Palaiseau, France
“For pioneering contributions to pulse compression devices and the invention of the Acousto-Optic Programmable Dispersive Filter.”
2004 - FREDERICK A. KISH, JR.
Infinera
Sunnyvale, CA
'For his key role in the development of high efficency transparent substrate light emitting diodes and their commercial realization.'
2003 - PETER ASBECK
Professor, Electrical and Computer Engineering
Univ of California
San Diego, CA
"For development and applications of Ga-As-based heterojunction bipolar transistors."
2002 - YOUNG-KAI CHEN
Director, High Speed Electronics Research Department, Bell Laboratories
Lucent Technologies, Murray Hill, New Jersey, USA
'For contributions to ultrahigh speed heterostructure transistors and seminal work on colliding pulse mode-locked semiconductor lasers.'
2001 - P. DANIEL DAPKUS
University of Southern California
Los Angeles, California
'For contributions both to the establishment of MOCVD as a dominant technology for epitaxial materials growth and to the first MOCVD quantum well laser.'
2000 - ALASTAIR MALCOLM GLASS
Bell Laboratories/Lucent Technologies
Murray Hill, NJ
'For pioneering research on electro-optical materials and photorefractive phenomena, and for leadership in development of Wavelength Division Multiplexing (WDM) components.'
1999 - GERARD A. MOUROU
A.D. Moore Distinguished University Professor of EECS
Center for Ultrafast Optical Science, University of Michigan
Ann Arbor, Mich., USA.
'For pioneering contributions to high-speed, high-intensity optoelectronic measurement techniques, including electro-optic sampling and femtosecond high-voltage switching.'
1998 - TATSUO IZAWA
Nippon Telegraph and Telephone Corp. - Kanagawa, Japan
'For contributions to vapor phase axial deposition for optical fiber fabrication.'
1997 - MILTON FENG
University of Illinois - Urbana, IL
'For contributions to the theoretical and experimental understanding of the fundamental speed limitations of MESFETs and HEMTs.'
1996 - HIROYUKI SAKAKI
University of Tokyo - Tokyo, Japan
'For pioneering studies of quantum effects in semiconductor mircostructures.'
1995 - KARL HESS
Beckman Inst. - Univ. of Illinois - Urbana, IL
'For contributions to high field transport and real space transfer effects in semiconductor heterolayer structures.'
1994 - WON-TIEN TSANG
AT&T Bell Labs. - Murray Hill, NJ
'For innovative contributions to the design of novel quantum well semiconductor lasers and to epitaxial growth processes.'
1993 - RAO R. TUMMALA
IBM Corp. - Hopewell Junction, NY
'For development of high density, high performance multichip packages for computer applications.'
1992 - J. JIM HSIEH
Lasertron Inc. - Burlington, MA
'For the invention and commercialization of the GaInAsP semiconductor laser for fiber-optic communications.'
1991 - FEDERICO CAPASSO
AT&T Bell Labs. - Murray Hill, NJ
'For pioneering contributions to heterostructure devices through the use of bandgap engineering techniques.'
1990 - LEROY L. CHANG
IBM Corp. - Yorktown Heights, NY
'For pioneering contributions to the realization and development of quantum wells and superlattices.'
1989 - HERWIG KOGELNIK
Bell Labs., NJ
and
CHARLES V. SHANK
Bell Labs., NY
'For invention of the distributed feedback laser, and contributions to integrated optics and fiber communications.'
1988 - IZUO HAYASHI
Optoelectronics Joint Res. Lab. - Japan
'For contributions to III-V semiconductors and device technology.'
1987 - FRANK F. FANG
IBM Corp., NY
and
ALAN B. FOWLER
'For contributions to MOSFET device physics and two-dimensional electron systems.'
1986 - YASUHARU SUEMATSU
Tokyo Inst. of Tech. - Japan
'For contributions to semiconductor lasers and integrated optics for optical fiber communications.'
1985 - HENRY KRESSEL
E.M. Warburg, Pincus & Co.- NY
'For outstanding contributions to electro-optic semiconductor devices.'
1984 - JAMESON D. RIGDEN
England
and
ALAN D. WHITE
White Associate
'For invention of the visible light helium-neon laser.'
1983 - HERMANN K. GUMMEL
Bell Labs. - Murray Hill, NJ
'For contributions and leadership in device analysis and development of computer-aided design tools for semiconductor devices and circuits.'
1982 - NOBUTOSHI KIHARA
SONY Corp. - Tokyo, Japan
'For major contributions to magnetic video tape recording.'
1981 - CYRIL HILSUM
Royal Signals & Radar Establ. - Malvern, England
'For contributions in the fields of III-V compound semiconductors, solid state microwave components and display devices.'
1980 - MARSHALL I. NATHAN
IBM Corp. - Yorktown Heights, NY
'For his role in the discovery of the injection laser, and other contributions to the physics of semiconductor devices.'
1979 - A. GARDNER FOX
and
TINGYE LI
Bell Labs. - Holmdel, NJ
'For the discovery of modes in open structures and their applications to laser resonators.'
1978 - STEPHEN E. HARRIS
Stanford Univ., CA
'For scientific discoveries and device inventions in the fields of lasers, quantum electronics and non-linear optics.'
1977 - JACK M. MANLEY
Univ. of Wisconsin
and
HARRISON E. ROWE
Bell Labs., NJ
'For their work on the properties of nonlinear devices resulting in the well-known Manley Rowe Relations.'
1976 - GEORGE HARRY HEILMEIER
Defense Adv. Res. Project Agy. - Arlington, VA
'For combining science with engineering to create the dynamic scattering liquid crystal display.'
1975 - BERNARD C. DELOACH, JR.
'For contributions to and leadership in the development of the impact avalanche and transit time (IMPATT) device.'
1974 - FREDERIK L. J. SANGSTER
'For the invention of the integrated bucket-brigade delay line and ingenuity in finding new realizations and applications of this principle.'
1973 - MAX VERNON MATHEWS
'For leadership in applying electronics to art and for his contribution to the production of musical sounds by computer.'
1972 - EDWARD G. RAMBERG
'For outstanding contributions to electron physics, electron optics and television.'
1971 - ALAN L. MCWHORTER
'For outstanding contributions leading to a better understanding of semiconductor devices.'
1970 - JOHN BERTRAND JOHNSON
'For fundamental contributions of major importance to electronics and communications.'
1969 - ROBERT H. REDIKER
Massachusetts Institute of Technology
Cambridge, MA
'For contributions to semiconductor device research and injection lasers.'
1968 - WALTER P. DYKE
Field Emission Corporation
McMinnville, Oregon
'For pioneering contributions to the development of field emission in X-ray technology.'
1967 - JAMES HILLIER
RCA Laboratories
Princeton, NJ
'For his pioneering research on the electron microscope, including both electron optics and biological microscopy, and for his accomplishments as a research director and his inspiration to scientists - young and old.'
1966 - JACK S. KILBY
Texas Instruments Incorp.
Dallas, TX
'For his outstanding creative contribution in the field of monolithic integrated circuits, for his key inventions and for his team leadership in the application of integrated circuits to large scale systems.'
1965 - JACK A. MORTON
Bell Telephone Laboratories
Murray Hill, NJ
'For his outstanding leadership and contributions to the development and understanding of solid-state electron devices.'
1964 - HENRI BUSIGNIES
Interntional Telephone & Telegraph
New York, NY
'For outstanding contributions to electronic systems especially in the fields of direction finding and air navigation.'
1963 - ROBERT N. HALL
General Electric Company
Schenectady, NY
'For his outstanding contributions to the scientific understanding of semiconductors and for their applications to electronics.'
1962 - HARRY B. SMITH
Westinghouse Electric Corporation
Baltimore, MD
'For his contributions to the field of Doppler radar and other areas of applied electronics.'
1961 - CHARLES H. TOWNES
'For research in resonance physics leading to major advances in communication technology.'
1960 - RUDOLF KOMPFNER
Bell Telephone Laboratories
Holmdel, NJ
'For creative achievements in research and development in the field of electronics and for his leadership in this field.'
1959 - DAVID SARNOFF
Radio Corporation of America
New York, NY
'This special inaugural award of the David Sarnoff Medal is made to David Sarnoff October 7, 1959, on the 75th Anniversary of the first technical meeting of AIEE, in recognition of his inspiring and courageous leadership in the advancement of the art and science of electronics.'
