EDS Class of 2001 Fellows
39 EDS Members Elected to the IEEE Grade of Fellow
Effective 1 January 2003
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Richard Keith Ahrenkiel |
| Barry E. Burke MIT Lincoln Laboratory, Lexington, MA, USA For contributions to the technology development of charge-coupled devices for imaging and signal processing. |
| Sethumadhavan Chandrasekhar Lucent Technologies, Holmdel, NJ, USA For contributions to the design and development of 1.55 um opto-electronic integrated circuits for wide-spectrum application in optical communications. |
| Ih-Chin Chen Worldwide Semiconductor Manufacturing, Hsin-Chu City, Taiwan For leadership in the development of advanced CMOS technologies. |
| John D. Cressler Auburn University, Auburn, AL, USA For contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors. |
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Sorin Cristoloveanu |
| Rik W.A.A. de Doncker Aachen University of Technology, Aachen, Germany For contributions to the development of high-power resonant soft-switching converters and high-performance digital control of induction machines. |
| Sang H. Dhong IBM Austin Research Laboratory, Austin, TX, USA For contribution to high speed processor and memory chip design. |
| Samir M. El-Ghazaly Arizona State University, Tempe, AZ, USA For contributions to the analysis and simulations of microwave devices and circuits. |
| Arthur Charles Gossard Univ. of California, Santa Barbara, Santa Barbara, CA, USA For contributions to semiconductor microstructure fabrication. |
| Aditya Kumar Gupta Northrop Grumman Corporation, Linthicum, MD, USA For contributions to the advancement of microwave monolithic integrated circuit technology and leadership in the development of manufacturable processes. top of page |
| Yoshiaki Daimon Hagiwara Sony Corporation, Tokyo, Japan For pioneering work on, and development of, solid-state imagers. |
| Takeo Hattori Musashi Institute of Technology, Tokyo, Japan For his contributions to the studies on the formation and the characterization of ultrathin gate oxides for ULSI devices. |
| James N. Hollenhorst Agilent Laboratories, Palo Alto, CA, USA For contributions to ultra-high performance avalanche photodiodes. |
| Wei Hwang IBM T.J. Watson Research Center, Yorktown Heights, NY, USA For contributions to high density cell technology and high speed Dynamic Random Access Memory design. |
| Hiroshi Ishiwara Tokyo Institute of Technology, Yokohama, Japan For contributions to Si-based heterostructure devices and ferroelectric memories. top of page |
| Dieter Stefan Jager Gerhard-Mercator-Universitat Duisburg, Duisburg, Germany For contributions to the development of device concepts in microwaves and photonics. |
| Robert Forrest Kwasnick General Electric Medical Systems, Santa Clara, CA, USA For contributions to the development of amorphous silicon flat panel x-ray imager technology. |
| Kei May Lau Hong Kong University of Science & Tech., Kowloon, Hong Kong For contributions to III-V compound semiconductor heterostructure materials and devices. |
| Chin Chung Lee University of California, Irvine, CA, USA For pioneering research in fluxless bonding technology and contributions to thermal design tools for electronic devices and packages. |
| Baruch Levush Naval Research Laboratory, Washington, DC, USA For leadership in the development of theoretical and computational models of free electron radiation sources. top of page |
| Bernard S. Meyerson IBM T.J. Watson Research Center, Yorktown Heights, NY, USA For the invention of ultra high vacuum chemical vapor deposition and its application to low temperature epitaxy of SiGe for the fabrication of heterojunction bipolar integrated circuits for telecommunications. |
| Akihiko Morino NEC Corporation, Kanagawa, Japan For contributions to the development of System-on-a-Chip for multimedia applications. |
| Kenji Nishi Semiconductor Leading Edge Technologies, Inc., Kanagawa, Japan For contributions to semiconductor process and device modeling and the development of software for their simulation. |
| Jon Harris Orloff University of Maryland, College Park, MD, USA For contributions to Focussed Ion Beam Technology. |
| Stephen John Pearton University of Florida, Gainesville, FL, USA For development of advanced semiconductor processing techniques and their application to compound semiconductor devices. top of page |
| John Xavier Przybysz Northrop Grumman Corporation, Baltimore, MD, USA For contributions in the development and application of Josephson digital circuits to electronic systems, especially radars, communication satellites and data switching networks. |
| Hans-Martin Rein Ruhr-University, Bochum, Bochum, Germany For contributions to the design of high-speed silicon and silicon/germanium bipolar circuits, especially as applied to fiber-optic systems. |
| Edward Anthony Rezek TRW, Inc., Redondo Beach, CA, USA For contributions to GaAs and InP monolithic microwave integrated circuits and optoelectronic devices. |
| Arvind Kumar Sharma TRW, Inc., Redondo Beach, CA, USA For contributions to active device and passive component modeling, and design of high power monolithic millimeter-wave integrated circuits. |
| Krishna Shenai University of Illinois, Chicago, Chicago, IL, USA For contributions to the understanding, development and application of power semiconductor devices and circuits. top of page |
| Ritu Shrivastava Alliance Semiconductor Corporation, Santa Clara, CA, USA For contributions to high performance CMOS memory technology and product development. |
| James C. Sturm Princeton University, Princeton, NJ, USA For contributions to novel silicon-based semiconductor devices, large-area electronics, and engineering education. |
| Peter Vettiger IBM Zurich Research Laboratory, Rueschlikon, Switzerland For contributions to, and leadership in, the development of microfabrication processes for electronic, optoelectronic, and microelectrocomechanical devices, circuits, and systems. |
| Yang Yuan Wang Peking University, Beijing, China For leadership in China's semiconductor research and education |
| Isamu Washizuka Sharp Corporation, Nara, Japan For contributions to the technology and applications of liquid crystal displays. top of page |
| Andrew B. Wittkower Soitec USA Inc., Peabody, MA, USA For contributions and leadership in the development and advancement of ion implantation techniques, equipment and companies. |
| Hon-Sum Philip Wong IBM T.J. Watson Research Center, Yorktown Heights, NY, USA For contributions to solid-state image sensors and nanoscale CMOS devices. |
| Max Neil Yoder Office of Naval Research, Arlington, VA, USA For leadership of government sponsored development of microwave integrated circuits The Nominations of the Following IEEE Members Were Evaluated by EDS But the individuals are Not Current Members of EDS |
| Karl W. Boer Solar Knoll, Kennett Square, PA, USA For contributions to research, development, and commercialization of thin film solar cells. |
| Satoshi Hiyamizu Osaka University, Osaka, Japan For contributions to the realization of the first high electron mobility transistor (HEMT). top of page |
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