EDS Class of 2006 Fellows
23 EDS Members Elected to the IEEE Grade of Fellow
Effective 1 January 2006
| Muhammad Alam, Purdue University, West Lafayette, IN, USA for contributions to complementary metal oxide semiconductors (CMOS) circuit reliability and computational models for electronics and optoelectronics Jesus del Alamo, Massachusetts Institute of Technology, Cambridge, MA, USA Seshu Desu, University of Massachusetts-Amherst, Amherst, MA, USA Andreas Andreou, Johns Hopkins University, Baltimore, MD, USA Gary Bernstein, University of Notre Dame, Notre Dame, IN, USA Steve Chung, National Chiao Tung University, Hsinchu, Taiwan top of page
Simon Deleonibus, CEA LETI, Grenoble Cedex 9, France Hector De Los Santos, NanoMEMS Research, LLC, Irvine, CA, USA Martin Giles, Intel Corporation, Hillsboro, OR, USA Hideki Hayashi, Sumitomo Electric Industries, Tokyo, Japan Larry Hornbeck, Texas Instruments DLP Products, Van Alstyne, TX, USA top of page
Qin (Alex) Huang, North Carolina State University, Raleigh, NC, USA Muhammad Khan, University of South Carolina, Columbia, SC, USA Mong-Song Liang, TSMC (Taiwan Semiconductor Manufacturing Company, Ltd), Hsin Chu, Taiwan, ROC Gary May, Georgia Institute of Technology, Atlanta, GA, USA David Seiler, National Institute of Standards and Technology, Gaithersburg, MD, USA top of page
Goran Stemme, Royal Institute of Technology, Stockholm, Sweden Yu-Chong Tai, California Institute of Technology, Pasadena, CA, USA Katsuyoshi Washio, Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, Japan Werner Weber, Infineon Technologies, Munich, Germany Burnell West, Credence Systems Corporation, San Jose, CA, USA top of page
Gerald Witt, Air Force Office Scientific Research, Arlington, VA, USA Usha Varshney, National Science Foundation, Arlington, VA, USA |


