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EDS Class of 2006 Fellows

Fellow Listings

2000| 2001 | 2002 | 2003 | 20042005 | 2006 | 2007 | 2008

23 EDS Members Elected to the IEEE Grade of Fellow
Effective 1 January 2006

Muhammad Alam, Purdue University, West Lafayette, IN, USA
for contributions to complementary metal oxide semiconductors (CMOS) circuit reliability and computational models for electronics and optoelectronics

Jesus del Alamo, Massachusetts Institute of Technology, Cambridge, MA, USA
for contributions to microelectronic devices

Seshu Desu, University of Massachusetts-Amherst, Amherst, MA, USA
for contributions to development of ferroelectric thin film devices

Andreas Andreou, Johns Hopkins University, Baltimore, MD, USA
for contributions to energy efficient sensory microsystems

Gary Bernstein, University of Notre Dame, Notre Dame, IN, USA
for contributions to techniques for fabricating nanoscale devices and circuits

Steve Chung, National Chiao Tung University, Hsinchu, Taiwan
for contributions to reliability in ultra-thin-oxide complementary metal oxide semiconductor (CMOS) devices


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Simon Deleonibus, CEA LETI, Grenoble Cedex 9, France
for contributions to nanoscaled complementary metal oxide semiconductor (CMOS) devices technology

Hector De Los Santos, NanoMEMS Research, LLC, Irvine, CA, USA
for contributions to radio frequency (RF) and microwave micro electro-mechanical systems (MEMS) devices and applications

Martin Giles, Intel Corporation, Hillsboro, OR, USA
for contributions to technology computer aided design (TCAD) modeling of processes and devices

Hideki Hayashi, Sumitomo Electric Industries, Tokyo, Japan
for contributions to and leadership in compound semiconductor device technologies

Larry Hornbeck, Texas Instruments DLP Products, Van Alstyne, TX, USA
for invention, development, and applications of the Digital Micromirror Device


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Qin (Alex) Huang, North Carolina State University, Raleigh, NC, USA
for contributions to emitter turn-off thyristor technology and its applications

Muhammad Khan, University of South Carolina, Columbia, SC, USA
for contributions to the development of III-nitride electronic sensor systems

Mong-Song Liang, TSMC (Taiwan Semiconductor Manufacturing Company, Ltd), Hsin Chu, Taiwan, ROC
for contributions to semiconductor manufacturing technologies

Gary May, Georgia Institute of Technology, Atlanta, GA, USA
for contributions to semiconductor manufacturing and engineering education

David Seiler, National Institute of Standards and Technology, Gaithersburg, MD, USA
for leadership in the development of critical metrology and measurement science at the micro and nano levels


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Goran Stemme, Royal Institute of Technology, Stockholm, Sweden
for contributions to micro electro-mechanical systems (MEMS)

Yu-Chong Tai, California Institute of Technology, Pasadena, CA, USA
for contributions to integrated nano/micro electro-mechanical systems (MEMS) and nano/micro-fluidics for Lab-on-a-Chip applications

Katsuyoshi Washio, Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, Japan
for contributions to high-speed silicon and silicon germanium bipolar/Bi complementary metal oxide semiconductors (CMOS) device and circuit technologies

Werner Weber, Infineon Technologies, Munich, Germany
for contributions to metal oxide semiconductors (MOS) device physics

Burnell West, Credence Systems Corporation, San Jose, CA, USA
for contributions to high-performance automatic test equipment


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Gerald Witt, Air Force Office Scientific Research, Arlington, VA, USA
for the promotion of research in compound semiconductor devices

Usha Varshney, National Science Foundation, Arlington, VA, USA
for technical leadership in sensor technologies and systems

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