EDS George E. Smith Award
The George E. Smith Award was established in 2002 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to IEEE Electron Device Letters.
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Award Winners
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Year
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Paper Title
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Authors
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| 2008 | "Low-Temperature-Processed Inorganic Gate Dielectrics for Plastic-Substrate-Based Organic Field-Effect Transistor" and "Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon " |
H.S. Tan, T. Cahyadi, Z.B. Wang, A. Lohani, Subodh G. Mhaisalkar, Z. Tsakadze, S. Zhang, F.R. Zhu and D-H Kim, J-H Ahn, H-S Kim, K.J. Lee, T-H Kim, John A. Rogers, C-J Yu, R.G. Nuzzo |
| 2007 | "Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors" | Navab Singh, W.W. Fang, L.K. Bera, H.S. Nguyen, S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.-L. Kwong |
| 2006 | "Half-Terahertz Operation of SiGe HBTs" | John D. Cressler, Ramkumar Krithivasan, Yuan Lu, Jae-Sung Rieh, Marwan H. Khater, David Ahlgren and Greg Freeman |
| 2005 | "Pentacene TFT Driven AM OLED Displays" | Lisong Zhou, Sungkyu Park, Bo Bai, Jie Sun, Sheng-Chu Wu, Thomas N. Jackson, Shelby Nelson, Diane Freeman and Yongtaek Hong |
| 2004 | "Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface" | Zhiyuan Cheng, A.J. Pitera, M.L. Lee, J. Jung, J.L. Hoyt, D.A. Antoniadis, and E.A. Fitzgerald |
| 2003 | "(110) Strained - SOI N - MOSFETs with Higher Electron Mobility " |
T. Mizuno, N. Sugiyama, S. Takagi and T. Tezuka |
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2002
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"Self-Aligned SiGe NPN Transistors with 285 GHz fMAX and 207 GHzfT in a Manufacturable Technology"
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B. Jagannathan, M. Khater, F. Pagette, J.-S Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein and S. Subbanna.
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Learn more about the George E. Smith Award
