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EDS George E. Smith Award

The George E. Smith Award was established in 2002 to recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to IEEE Electron Device Letters.

Award Winners
Year
Paper Title
Authors
2007 "Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors" Navab Singh, W.W. Fang, L.K. Bera, H.S. Nguyen, S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.-L. Kwong
2006 "Half-Terahertz Operation of SiGe HBTs" John D. Cressler, Ramkumar Krithivasan, Yuan Lu, Jae-Sung Rieh, Marwan H. Khater, David Ahlgren and Greg Freeman
2005 "Pentacene TFT Driven AM OLED Displays" Lisong Zhou, Sungkyu Park, Bo Bai, Jie Sun, Sheng-Chu Wu, Thomas N. Jackson, Shelby Nelson, Diane Freeman and Yongtaek Hong
2004 "Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface" Zhiyuan Cheng, A.J. Pitera, M.L. Lee, J. Jung, J.L. Hoyt, D.A. Antoniadis, and E.A. Fitzgerald
2003
"(110) Strained - SOI N - MOSFETs with Higher Electron Mobility "
T. Mizuno, N. Sugiyama, S. Takagi and T. Tezuka
2002
"Self-Aligned SiGe NPN Transistors with 285 GHz fMAX and 207 GHzfT in a Manufacturable Technology"
B. Jagannathan, M. Khater, F. Pagette, J.-S Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein and S. Subbanna.

 

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