EDS George E. Smith Award
EDS George E. Smith Award (Named after the founding editor, first presentation - 2003)
Description: To recognize the best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society, targeted to IEEE Electron Device Letters. Currently no such award exists. (The existing Rappaport award goes to best paper in IEEE Transactions on Electron Devices.)
Administration: Electron Devices Society
Eligibility: Authors of papers appearing in IEEE Electron Device Letters publication in preceding calendar year.
Prize Items: $2,500 and Certificate and travel reimbursement (on an as needed basis, at the discretion of the President), a maximum travel support of $1,500 for a winner residing within the U.S. and a maximum travel support of $3,000 for a winner residing outside the U.S. to attend the award presentation at the International Electron Devices Meeting.
Funds: Funded by the IEEE Electron Devices Society.
Nominee Solicitation: Nominations will be solicited from the editorial board of IEEE Transactions of Electron Devices and IEEE Electron Devices Letters.
Award Committee: Editorial Board of T-ED and EDL
Schedule: Nominations in November, selection by next June and presentation in December
Selection/Basis for Judging:
(i) Creativity/Innovation/Novelty
(ii) Convincing (Experimental / theoretical basis)
(iii) Significance (Academic/commercial impact)
(iv) A comprehensive enunciation of the contribution in relation to prior art
(v) Clarity
Presentation: Annually, at International Electron Devices Meeting.
Publicity: EDS Newsletter and EDS Membership brochure
| GEORGE SMITH AWARD WINNERS | |
| Paper | Authors |
| 2006 | |
| Half-Terahertz Operation of SiGe HBTs | R. Krithivasan, Y. Lu, J. Cressler, J. Rieh, M. Khater, D. Ahlgren and G. Freeman |
| 2005 | |
| Pentacene TFT Driven AM OLED Displays | L. Zhou, S. Park, B. Bai, J. Sun, S. Wu, T. Jackson, S. Nelson, D. Freeman and Y. Hong |
| 2004 | |
| Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface | Z. Cheng, A.J. Pitera, M.L. Lee, J. Jung, J.L. Hoyt, D.A. Antoniadis and E.A. Fitzgerald |
| 2003 | |
| (110) Strained-SOI n-MOSFETs With Higher Electron Mobility | T. Mizuno, N. Sugiyama, T. Tezuka and S. Takagi |
| 2002 | |
| Self-Aligned SiGe NPN Transistors with 285 GHx fMAX and 207 GHz FT in a Manufacturable Technology | D. Ahlgren, D. Angell, H. Chen, J. Florkey, G. Freeman, F. Golan, D.R. Greenberg, R. Groves, B. Jagannathan, S.J. Jeng, J. Johnson, M. Khater, E. Mengistu, F. Pagette, J.-S Rieh, C.M. Schnabel, K.T. Schonenberg, P. Smith, K. Stein, A. Stricker and S. Subbanna |
