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EDS J.J. Ebers Award

 This award was established in 1971 with the intention to foster progress in electron devices and to commemorate the life activities of Jewell James Ebers, whose distinguished contributions, particularly in the transistor art, shaped the understanding and technology of electron devices. It is presented annually to honor an individual(s) who has made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient(s) is awarded a certificate and check for US$5,000, presented at the International Electron Devices Meeting.     
 

Please submit your on-line nomination form by 1 July, or if you prefer, you can print the nomination form and submit it to the EDS Executive Office.  All endorsement letters should be sent to l.riello@ieee.org.


PREVIOUS AWARD WINNERS

             
2008

Mark R. Pinto
“For contributions to widely applied semiconductor technology simulation tools.”

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2007

Stephen J. Pearton
“For developing advanced compound-semiconductor processing techniques, and clarifying the roles of defects and impurities in compound-semiconductor devices.”

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2006 

Ghavam G. Shahidi
"For contributions and leadership in the development of Silicon-On-Insulator CMOS technology" 

2005 

Bijan Davari
"For Contributions to deep-submicron CMOS technology and their impact on the IC industry" 

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2004 


Jerry G. Fossum
"For Outstanding Contributions to the Advancement of SOI CMOS Devices and Circuits Through Modeling" 

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2003 

James D. Plummer
"For Contributions to New Devices for Power Memory and Logic, and Fundamental Contribution to Process Modeling" 

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2002 

Lester F. Eastman
"For Sustained Technical Contributions and Leadership in the Development of High Frequency Heterostructure Transistors" 

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2001 

Hiroshi Iwai
"
For Sustained Leadership and Technical Contributions to the Continuous Scaling of CMOS Devices". 

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2000 

Bernard S. Meyerson
"For Seminal Contributions to the Growth of Si/SiGe Heterostructures and Leadership in its Application to Telecommunications Integrated Circuits" 

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1999 

James T. Clemens
"For Fundamental Contributions to MOS VLSI Electron Devices" 

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1998 

B. Jayant Baliga
"For Fundamental and Sustained Contributions to Power Semiconductor Devices"

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1997 

Marvin H. White
"For Pioneering Contributions to the Development of High Sensitivity Solid-State Cameras and Imagers, Widely Used in Consumer and Technical Applications, and for His Major Contributions to Progress in Semiconductor Devices"

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1996 

Tetsushi Sakai
"For Pioneering Research of High Speed Bipolar Integrated Circuits" 

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1995 

Martin A. Green
"For Sustained Technical Leadership in the Field of Silicon Photovoltaic Solar Energy Conversion" 

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1994 

Alfred U. Mac Rae
"For Technical Contributions and Leadership in Ion Implantation and VLSI CMOS"

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1993 

Karl Hess
"For Seminal Contributions to Electronic Transport in Semiconductors and in Quantum Well Heterostructures at High Energies"

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1992 

Louis C. Parrillo
"For Engineering Achievements in Process Architecture and Device Design for Twin-Tub CMOS Integrated Circuit Technology, Contributions to Bipolar Technology and Advancement of these Technologies in Commercial Utilization" 

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1991 

Simon M. Sze
"For Fundamental and Pioneering Contributions, and the Authorship of Widely-Used Technical Text and imageserence Books, in the Field of Electron Devices"

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1990 

Yoshiyuki Takeishi
"For Key Innovations in Programmable Memory Technology, Contributions to the Understanding of MOS Device Physics and Technical Leadership in the Development of VLSI Technology"

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1989 

Tak H. Ning
"For Outstanding Contributions to the Understanding of Hot Electron Effects in MOSFET Devices and for Developments in Advanced Bipolar Technology" 

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1988 

Al F. Tasch, Jr.
"For Outstanding Contributions to the Development of Silicon Integrated Circuits"

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1987 

Robert W. Dutton
"For Pioneering Contributions to the Field of Modeling and Simulation of IC Processes, Devices and Circuits" 

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1986 

Pallab K. Chatterjee
"For Outstanding Technical Contributions to Electron Devices" 

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1985 

Walter F. Kosonocky
"For Pioneering and Innovative Contributions to the Development of Charge-Coupled Devices and Schottky- Barrier Infrared Image Sensors" 

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1984 

Izuo Hayashi
"For Demonstrating and Understanding Continuous, Room-Temperature, Heterojunction Lasers" 

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1983 

Adolf Goetzberger
"For Pioneering Contributions to the Fundamental Understanding of Silicon Junction and Interface Device Physics" 

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1982 

Arthur G. Milnes

"For Contributions to Research and Education in the Heterojunction and Deep-Impurity Device Physics" 

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1981 

Chih-Tang Sah
"For Outstanding Technical Contributions to Electron Devices" 

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1980 

James D. Meindl
"For Pioneering Contributions to Microelectronics Research and Education" 

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1979 

James M. Early
"For Outstanding Technical Contributions to Electron Devices" 

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1978 

Hung C. Lin
"For Outstanding Technical Contribution to Electron Devices" 

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1977 

Anthony E. Siegman
"For Outstanding Technical Contributions to Electron Devices" 

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1976 

Marion E. Hines
"For Outstanding Technical Contributions in Electron Devices" 

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1975 

Jacques I. Pankove
"For Outstanding Technical Contribution to Electron Devices" 

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1974 

Andrew S. Grove
"For Outstanding Technical Contribution to Electron Devices" 

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1973 

Herbert Kroemer
"For Outstanding Technical Contribution to Electron Devices"

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1972 

Charles W. Mueller
"For Outstanding Technical Contributions to Electron Devices Spaning the Evolution of Modern Electronics From Grid Control Tubes Through the Alloy Transistor, the Thyristor, and MOS Devices to Silicon Vidicons and Silicon Storage Vidicons" 

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1971 

John L. Moll
"For Outstanding Technical Contribution to Electron Devices" 

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