EDS Class of 2002 Fellows
| Vasudev Kalkunte Aatre, Defense R&D Organization, Government of India, New Delhi, India For leadership in research and development for strategic electronics and defense systems top of page |
| Narain Das Arora, Simplex Solutions, Inc., Sunnyvale, CA, USA For contributions to the development of MOSFET compact models for circuit simulation |
| Joachim N. Burghartz, The Netherlands For contributions to integrated high-speed and radio-frquency silicon devices and components. |
| Keh-Yung Cheng, University of Illinois at Urbana Champaign, Urbana, IL, USA For contributions to semiconductor heterostructure materials and devices using molecular beam epitaxy |
| Bijan Davari, IBM, Hopewell Junction, NY, USA For contributions to high performance deep-submicron CMOS technology development |
| Nico De Rooij, University of Neuchatel, Neuchatel, Switzerland For contributions to microelectrical/mechanical systems and technology transfer to the marketplace top of page |
| Toshio Goto, Nagoya University, Aichi, Japan For contributions to plasma processing, gaseous electronics and lasers |
| James W. Haslett, University of Calgary, Calgary, Canada For contributions to high temperature instrumentation and noise in solid-state electronics |
| Allen Ray Hefner, National Inst. of Standards and Tech., Gaithersburg, MD, USA For contributions to the theory and modeling of power semiconductor devices |
| Chang-Gyu Hwang, Samsung Electronics Co., Ltd., Yongin, Korea For contributions to, and leadership in, device and process technologies for high density memories |
| Chennupati Jagadish, Australian National University, Canberra, Australia For contributions to III-V compound semiconductor optoelectronic device integration top of page |
| Ralph Boyd James, Brookhaven National Laboratory, Upton, NY, USA For contributions to and leadership in the development of wide band-gap compound semiconductor devices used for detecting and imaging X- and gamma-ray radiation |
| Allan Hugh Johnston, Glendale, CA, USA For contributions to the understanding of space radiation effects in optoelectronics |
| Rajiv V. Joshi, IBM Research Division, Yorktown Heights, NY, USA For contributions to chip metallurgy materials and processes, and high performance processor and circuit design |
| Jack C. Lee, The University of Texas at Austin, Austin, TX, USA For contributions to the understanding and development of ultra-thin dielectrics and their application to silicon devices |
| Si-Chen Lee, National Taiwan University, Taipei, Taiwan For contributions to heterojunction bipolar transistor technology in low noise and high gain applications top of page |
| Neville Clinton Luhmann, University of California, Davis, CA, USA For advances in millimeter/submillimeter wave plasma diagnostics, intense microwave plasma interactions, and coherent radiation generation |
| Leda M. Lunardi, JDS Uniphase Corp., Freehold, NJ, USA For contributions to the development of high-performance 1.55 um monolithically integrated photoreceiver for optical communication |
| Akira Matsuzawa, Matsushita Electric Industrial Co., Ltd., Osaka, Japan For contributions to high-speed A/D converters and mixed-signal integrated circuits |
| Wolfgang Porod, University of Notre Dame, Notre Dame, IN, USA For contributions to circuit concepts and architectures for nanoelectronics |
| Ulrich Lothar Rohde, Synergy Microwave Corp., Paterson, NJ, USA For contributions to and leadership in the development and industrial implementation of microwave computer-aided design technology top of page |
| Tadashi Saitoh, Tokyo University of Agriculture & Technology, Tokyo, Japan For contributions to development of crystalline silicon solar cells and materials for photovoltaic applications |
| Naoyuki Shigyo, Toshiba Corporation, Semiconductor Company, Yokohama, Japan For contributions to the development of technology-oriented computer-aided design of semiconductor devices |
| Rajendra Singh, Clemson University, Clemson, SC, USA For contributions to and technical leadership in the materials processing and manufacturing of semiconductor devices |
| Albert J.P. Theuwissen, Philips Semiconductors, Eindhoven, Netherlands For contributions to the development of CCD image sensors for still photography and HDTV applications |
| Tseung-Yuen Tseng, National Chiao Tung University, Hsinchu, Taiwan For contributions to ceramic capacitor and sensor technologies top of page |
| Toshiaki Tsuchiya, Shimane University, Shimane, Japan For contributions to the understanding of the reliability physics of MOS devices and the development of hot-carrier-immune CMOS technologies |
| Charles Wuching Tu, University of California, San Diego, La Jolla, CA, USA For contributions to molecular beam epitaxy of novel III-V semiconductors |
| Jan Van der Spiegel, University of Pennsylvania, Philadelphia, PA, USA For contributions in biologically motivated sensors and information processing systems |
| Ming C. Wu, University of California, Los Angeles, CA, USA For contributions to optical micro-electro-mechanical systems and high speed optoelectronics |
| Toshiaki Yachi, NTT Telecommunication Energy Laboratories, Tokyo, Japan For contributions to power semiconductor and micro-magnetic devices top of page |
The Nominations of the Following IEEE Members Were Evaluated by EDS
But Are Not Current Members of EDS
| Austin Michael Andrews, II, Alexandria, VA, USA For technical leadership of government research and development programs |
| Paul Siu-Chung Ho, The University of Texas at Austin, Austin, TX, USA For contributions to metalization of and metrology for multilevel interconnects and electronic packaging |
| Nicholas Reinhardt, Lexington, MA, USA For contributions to hydrogen thyratrons, high voltage pulse power, high voltage transmission and distribution |
| Larry F. Weber, Plasmaco, Inc., Highland, NY, USA For contributions to plasma display technology top of page |
