EDS Class of 2003 Fellows
25 EDS Members Elected to the IEEE Grade of Fellow
Effective 1 January 2003
| Heinrich P. Baltes, ETH Zurich, Zurich, Switzerland for contributions to the development and commercialization of CMOS based MEMS |
| Bernhard E. Boser, University of California, Berkeley, CA, USA for contributions to integrated MEMS and learning algorithm. |
| Zoltan J. Cendes, Ansoft Corporation, Pittsburgh, PA, USA for contributions to the application of finite element modeling to microwave guides, structures and circuits |
| Bruce G. Danly, US Naval Research Laboratory, Washington, DC, USA for contributions to the development of high-power millimeter-wave sources for fusion, accelerator, and defense applications |
| Gracie E. Davis, La Qunita, CA, USA for contributions to the development of radiation-hard electronic components for military and space applications |
| Mohamed J. Deen, Dundas, ON for contributions to modeling, noise, and parameter extraction in silicon transistors and high speed photodetectors top of page |
| Georges J. Faillon, Velizy, 78141 France for contributions to applications of high efficiency-high power klystrons and gyrotrons |
| David J. Frank, Yorktown Heights, NY, USA for contributions to solid-state devices and ultra-small CMOS devices |
| William D. Greason, Ontario, Canada for contributions to the fundamental principles of electrostatic discharge and its effect on electronic devices and systems |
| Dong-Seok Hyun, Seoul, Korea for contributions to the design, analysis, and implementation of high performance power conversion systems and for leadership in power electronics education |
| Thomas N. Jackson, University Park, PA, USA for contributions to GaAs MESFETS and thin-film transistors |
| Kristina M. Johnson, Durham, NC, USA for contributions to optoelectronic processing systems and liquid crystal devices top of page |
| Nan M. Jokerst, Atlanta, GA, USA for contributions to the integration and packaging of optoelectronic devices for the realization of optical interconnections and interfaces |
| Kinam Kim, Yong-in City, Korea for contributions the development of high-density dynamic random access memory |
| Hoi-Sing Kwok, Hong Kong, China for pioneering research in liquid crystal display technology |
| Hiroyuki Matsunami, Kyoto, Japan for contributions to Silicon Carbide epitaxial growth technology and transistors |
| Tadashi Nishimura, Hyogo, Japan for leadership in the development of advanced CMOS devices and process technologies top of page |
| Tadahiro Ohmi, Sendai, Japan for contributions and leadership in semiconductor engineering |
| Umberto Ravaioli, Urbana, IL, USA for contributions to Monte Carlo simulation of electron devices |
| Bruno Ricco, Bologna, Italy for contributions to thin oxide MOS devices and non volatile memories |
| Mark J. Rodwell, Santa Barbara, CA, USA for contributions to high speed electron devices and integrated circuits |
| Dierk Schroeder, Munich, Germany for contributions to modeling of power semiconductors for circuit design top of page |
| Alan C. Seabaugh, Notre Dame, IN, USA for contributions to high speed and nanoelectronic device and circuit technology |
| Elias D. Towe, Pittsburgh, PA, USA for contributions to nanostructure optoelectronic technology |
| Steven H. Voldman, Essex Junction, VT, USA for contributions to electrostatic discharge protection in CMOS, silicon on insulator, and RF silicon germanium technology |
The Nominations of the Following IEEE Members Were Evaluated by EDS
But the individuals are Not Current Members of EDS
| Teruaki Aoki, Tokyo, Japan for leadership in consumer electronics and contributions to semiconductor technology |
| David L. Cave, Tempe, AZ, USA for contributions to analog product development and smart power devices top of page |
| Shang-Yi Chiang, Hsin-Chu, Taiwan for technical leadership in developing and elevating silicon foundry technologies |
| William J. Gallagher, Yorktown Heights, NY, USA for contributions to the development of oxide-barrier tunnel junctions for superconducting and magnetic device applications |
| David L. Harame, Essex Junction, VT, USA for contributions to the development of SiGe Heterojunction Bipolar Transistor and BiCMOS technologies |
| Burn Jeng Lin, Hsin Chu, 300 Taiwan for contributions to lithography theory, tooling, masks, and fabrication technology top of page |
