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EDS Class of 2004 Fellows

FellowListings

2000| 2001 | 2002 | 2003 | 20042005 | 2006 | 2007 | 2008

34 EDS Members Elected to the IEEE Grade of Fellow
Effective 1 January 2004

Mark T. Bohr, Intel Corp, Hillsboro, OR, USA
for leadership in advancing CMOS logic technologies

Thomas J. Brazil, National University of Ireland, Dublin, Ireland
for contributions to circuit level modeling of non-linear devices 

Kevin F. Brennan, Georgia Tech, Atlanta, GA, USA
for contributions to the modeling of impact ionization in heterostructures and multiquantum well structures

Constantin Bulucea, National Semiconductor Corp., Santa Clara, CA, USA
for contributions to transistor engineering in the area of power electronics 

Hsing-Yao Chen, Chunghwa Picture Tubes, LTD, Fox River Grove, IL, USA
for contributions to electron gun design for color cathode ray tubes 

Denice Denton, University of Washington, Seattle, WA, USA
for leadership in engineering education and faculty mentoring 


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Robert R. Doering, Texas Instruments, Inc., Dallas, TX, USA
for leadership in the development of sub-micron CMOS and semiconductor manufacturing technology

Robert H. Eklund, Texas Instruments, Inc.,  Plano, TX, USA
for leadership in the development and manufacturing of sub-micron CMOS technologies 

Hiromu Fujioka, Osaka University, Osaka, Japan
for contributions to electron beam testing of semiconductor devices and circuits 

Stephen M. Goodnick, Arizona State University, Tempe, AZ, USA
for contributions to carrier transport fundamentals and semiconductor devices 

Erik H.M. Heijne, CERN, Geneva, Switzerland
for contributions to semiconductor detector systems and radiation tolerant detector readout electronics


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Jerry Hudgins, University of South Carolina, Columbia, SC, USA
for contributions to the design, modeling, and teaching of semiconductor devices for power electonics

Shuji Ikeda, Trecenti Technologies, Inc., Ibaraki, Japan
for contributions to the development and manufacturing of static random access memory

Hajime Ishikawa, Fujitsu Laboratories Ltd., Kanagawa, Japan
for technical leadership in the development of high-performance Si and GaAs devices and circuits

Robert W. Jackson, University of Massachusetts, Amherst, MA, USA
for contributions to the electromagnetic modeling of microwave integrated circuits and packaging

Kenneth M. Lakin, TFR Technologies, Inc., Bend, OR, USA
for contributions to thin-film resonator technology and applications


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Colin C. McAndrew, Motorola, Tempe, AZ, USA
for contributions to compact and statistical modeling of semiconductor devices 

Meyya Meyyappan, NASA Ames Research Center, Moffett Field, CA, USA
for leadership in the development of nanoelectronic devices and processes 

Alexander Nosich, Institute of Radio-Physics and Electronics of the National Academy of Sciences of Ukraine, Kharkov, Ukraine
for contributions to the applications of computational electromagnetics to antennas and open waveguides

Hiroshi Nozawa, Kyoto University,  Kyoto Prefecture, Japan
for contributions to nonvolatile semiconductor memories

Mikael L. Ostling, KTH, Royal Institute of Technology, Kista, Sweden
for contributions to semiconductor device technology and education 


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Jerzy Ruzyllo, Pennsylvania State University, University Park, PA, USA
for contributions to ultrathin oxidation in microelectronic manufacturing 

Victor Ryzhii, University of Aizu, Fukushima, Japan
for contributions to the development of quantum well infrared photodetectors and quantum dot infrared photodetectors 

Nobuhiko Sawaki, Nagoya University, Nagoya, Japan
for contributions to the development of group III-nitride semiconductor materials and devices 

Martin A. Schmidt, MIT, Reading, MA, USA
for contributions to design and fabrication of mircoelectromechanical systems 

David B. Scott,  Texas Instruments, Inc., Plano, TX, USA
for contributions to CMOS and BICMOS technology and circuits 


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Ninoslav Stojadinovic, University of Nis, Nis, Serbia & Montenegro
for contributions to the reliability physics of metal-oxide-semiconductor devices 

Roger W. Sudbury, MIT Lincoln Laboratory, Lexington, MA, USA
for leadership in gallium arsenide integrated circuits

Christer M. Svensson, Linkoping University, Linkoping, Sweden
for contributions to single phase clocking and high speed CMOS circuits 

Stuart K. Tewksbury, Stevens Institute of Technology, Hoboken, NJ, USA
for contributions to telecommunications and interconnections in high performance digital systems 

Douglas P. Verret, Texas Instruments, Inc., Stafford, TX, USA
for leadership in the commercialization of bipolar and BiCMOS technologies 


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Dwight L. Woolard, US Army Research Lab., Research Triangle Park, NC, USA
for leadership in the discovery and development of novel sensing methodologies and advanced electronic devices at terahertz frequencies 

Shin-Tson Wu, University of Central Florida, Orlando, FL, USA
for contributions to liquid crystal displays and tunable photonic devices 

Katsumi Yoshino, Osaka University, Osaka, Japan
for contributions to organal electronic and optoelectronic materials 

The Nominations of the Following IEEE Members Were Evaluated by EDS But the individuals are Not Current Members of EDS 

Gary B. Bronner, IBM, Hopewell Junction, NY, USA
for contributions to dynamic random access memory technology 

Ghavam  G. Shahidi, IBM Microelectronics, Hopewell Junction, NY, USA
for contributions to silicon-on-insulator technology products


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