Constantin Bulucea (S’69-M’70-SM’88-F’04) was born in Romania, where he received his M.S. and Ph.D. degrees in Electrical Engineering from the Polytechnic Institute of Bucharest, in 1962 and 1974, respectively.  In 1969, he was awarded a one-year scholarship for graduate studies at the University of California, Berkeley. 

From 1965 to 1986, he worked in the rapidly growing semiconductor industry of his country, holding various positions from staff engineer to director of research and development.  During that period, he published reference contributions to the physical electronics of surface breakdown and hot-carrier-injection in silicon devices.  In 1987, he joined Siliconix, Santa Clara, California, where he brought to completion the development of world’s highest-current transistor switch in trench DMOS technology.  Since 1990, he has been with National Semiconductor, leading IC process development programs that integrate analog-optimized sub-micron CMOS FETs, monolithic power FETs, and SiGe-base BJTs.  He has published over fifty papers in the areas of device physics and engineering (1962-1980), technology of power DMOS transistors (1987-1990), and VLSI devices (1991 to present).  In the above areas, he has thirty US patents, with several others pending.

Dr. Bulucea has served one full Technical Committee term of the VLSI Technology Symposium and the Bipolar Circuits and Technology Meeting.

Dr. Bulucea is a Fellow of IEEE and an honorary member of the Romanian Academy.