Jin Cai received the B.S. degree in physics from Fudan University, Shanghai, China in 1989 and the M.S. and Ph.D. degrees in electrical engineering from University of Florida, Gainesville, FL in 1997 and 2000 respectively. His PhD research includes the development of carrier recombination theory used in the DCIV method to characterize deep-submicron MOS transistors, under the direction of C.-T. Sah.

From 1989 to 1995, he was with Philips Semiconductor, Shanghai where he led a team of nine MS/BS level engineers in the lithography department. Since 2000, he has been with IBM T. J. Watson Research Center, Yorktown Heights, NY as a research staff member. He has worked in the areas of silicon-germanium hetero-junction bipolar transistor on SOI, strained-silicon CMOS, sub-ambient temperature CMOS, and more recently ultra-low leakage CMOS.

Dr. Cai is the author of a book chapter, and about 35 technical papers in conferences and journals. His work on SOI bipolar was featured in the IEEE Spectrum magazine. He holds 6 US and international patents. He has served as a reviewer for IEEE and AIP journals. He is a member of IEEE and was elected a member of the honor society of Phi-Kappa-Phi. He is the recipient of an IBM outstanding technical achievement award.