Gaudenzio Meneghesso (IEEE Senior Member) was born in Padova, Italy in 1967. He graduated in Electronics Engineering at the University of Padova in 1992 working on the failure mechanism induced by hot-electrons in MESFETs and HEMTs. He received the Italian Telecom award for his thesis work in 1993. In 1995 he was at the University of Twente (The Netherland) with an Human Capital and Mobility fellowship (within the SUSTAIN Network) working on the dynamic behavior of protection structures against ESD. In 1997 he received the Ph.D. degree in Electrical and Telecommunication Engineering from the University of Padova working on hot-electron characterization, effects and reliability of GaAs-based and InP-based HEMT's and pseudomorphic HEMT's. Since 2002 is with University of Padova as Associate Professor.

His research interests are: a) Electrical characterization, modeling and reliability of microwave devices on III-V semiconductors such as GaAs and InP (MESFETs, HEMTs and PHEMTs); b) Electrical characterization, modeling and reliability of electronic and opto-electronic devices grown on wide bandgap semiconductors (SiC and GaN); c) Electrical characterization, modeling and reliability of RF-MEMS switches for reconfigurable antenna switches. d) Design, characterization and modeling of Electrostatic discharge (ESD) protection structures for CMOS and SMART POWER integrated circuits including ElectroMagnetic interference issues;

Within these activities he published about 250 technical papers (of which more than 20 Invited Papers and 4 best paper awards at 1996, 1999, 2007 ESREF Conferences, and at the 2006 EOS/ESD Symposium). He is reviewer of several international journals: IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEE Electronics Letters, Journal of Applied Physics, Applied Physics Letters and Semiconductor Science and Technology (IOP), Microelectronics Reliability (Elsevier). He has been the Technical program Chair of WOCSDICE 2001, General Chair of HETECH 2001, and General Chair of WOCSDICE 2007. He served in the Technical Program Committee of several international conferences: European Microwave Week (EuMW), European Symposium Reliability on Electron Devices, Failure Physics and Analysis (ESREF), Electrical Overstress/ElectroStatic Discharge (EOS/ESD) Symposium. He served several years for the IEEE International Reliability Physics (IRPS) Symposium (from 2005 to 2008) He also served several years for the IEEE-International Electron Device Meeting (IEDM): he was in the Quantum Electronics and Compound Semiconductors sub-committee as a member in 2003, as chair in 2004 and 2005 while in 2006 and 2007 he has been in the Executive Committee as European Arrangements Chair. Finally he Editor of the IEEE Electron Device Letter for the compound semiconductor devices area.