Sei-Hyung Ryu received B.S. degree in Electronics Engineering in February 1992 from Seoul National University ( Seoul, Korea), and M.S. and Ph.D. degrees in Electrical Engineering in December 1993 and in May 1997, respectively, from Purdue University, where he developed a CMOS technology in 6H-SiC for smart power applications. He continued his research in SiC devices as a Post-Doctoral Research Associate with the Wide Bandgap Research Group of Purdue University until January 1999. In February 1999, he joined Cree, Inc., where he has been developing high performance power switching devices in 4H-SiC. Sei-Hyung Ryu played a key role in commercial development of 4H-SiC power Schottky diodes, and is currently focused on the development of power DMOSFETs in 4H-SiC. His research interest includes high power, high temperature power devices, devices for harsh environments, and novel devices in wide bandgap semiconductor materials.