Enrico Sangiorgi was born in Faenza, Italy, in 1954. He received the Laurea degree in Electrical Engineering from the University of Bologna, Italy, in 1979. In 1993 he has been appointed Full Professor of Electronics at the University of Udine, Italy, where he is now responsible of the Electrical Engineering Program. Since 1985 he has been a consultant of Bell Laboratories - Lucent Technologies, Murray Hill, New Jersey, where he has been a Resident Visitor for more than three years.

In 1983, 1984, and 1991 he was a Visiting Scientist at Center for Integrated Systems, Stanford University, California. Since 1994 he is Editor of the IEEE Electron Device Letters. He has been a member of the Technical Committee of several International Conferences on Electron Devices (IEDM, ESSDERC, etc.) The research interests of Enrico Sangiorgi include the physics, characterization, modeling, and fabrication of silicon solid-state devices and integrated circuits. In particular he has been working on several aspects of device scaling, its technological, physical, and functional limits, as well as device reliability for silicon MOS and bipolar transistors. In order to tackle and eventually overcome the hurdles of device scaling, he has devised and developed several original concepts and methods in the characterization and modeling of nanoscale silicon devices. Enrico Sangiorgi is co-author of more than 100 papers on international Journals and Conferences.