Yuan Taur received the B.S. degree in physics from National Taiwan University, Taipei, Taiwan, in 1967 and the Ph.D. degree in physics from University of California, Berkeley, in 1974.

From 1975 to 1979, he worked at NASA, Goddard Institute for Space Studies, New York, on low-noise Josephson junction mixers for millimeter-wave detection. From 1979 to 1981, he worked at Rockwell International Science Center, Thousand Oaks, California, on II-VI semiconductor devices for infrared sensor applications. From 1981 to 2001, he was with the Silicon Technology Department of IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he was Manager of Exploratory Devices and Processes. Areas in which he has worked and published include latchup-free 1-um CMOS, self-aligned TiSi2, 0.5-um CMOS and BiCMOS, shallow trench isolation, 0.25-um CMOS with n+/p+ poly gates, SOI, low-temperature CMOS, and 0.1-um CMOS. Since October 2001, he has been a professor in the Department of Electrical and Computer Engineering, University of California, San Diego.

Dr. Yuan Taur was elected a Fellow of the IEEE in 1998. He is currently the Editor-in-Chief of the IEEE Electron Device Letters. He has served on the technical program committees and as a panelist for the Device Research Conference, and the International Electron Device Meeting, and as Program Chairman for the Symposium on VLSI Technology.

Dr. Yuan Taur has authored or co-authored over 130 technical papers and holds 12 U.S. patents. He is profiled in Marquis who's who in the world, 2001. He received 4 Outstanding Technical Achievement Awards and 6 Invention Achievement Awards over his IBM career. He co-authored the book, “Fundamentals of Modern VLSI Devices,”