MSc and PhD in Applied Physics from Paris University in 1979 and 1982 respectively. He joined Thomson Semiconducteurs ( Grenoble) in 1981 as a development and transfer to production process integration engineer.

He joined LETI(CEA) in 1986 as a device engineering and process modules development expert for CMOS and Flash memories applications.

From 1996 to 1999, he managed the Ultimate CMOS project. Since beginning 1999, he is the Director of the Electronic Nanodevices Laboratory(50 researchers). He manages several industrial, National and European funded projects.

Published papers or submitted: more than 350 (conferences and journals ; 40 invited) .

Owns 30 patents: among them the initial patent on contact plug principle, widely used as a standard process by the semiconductor industry.

With his team, he realized the first 20nm gate length MOSFET, world’s smallest transistor in June 1999.

Member of several International Conference program Committees. European Chair and Member of the VLSI Technology Symposium(from 2000 to 2006). Member of the 1998 and 1999,2004 and 2005 International Electron Devices Meeting (IEDM) program committtee. Member of the ESSDERC program committee and Responsible for the ESSDERC2005 Tutorials. Member of the International Technology Roadmap of Semiconductors(ITRS). Member of the Board of Directors of the Nanosciences Foundation. Member of the European Research Council Engineering Panel.

Since 1998, he lectures on microelectronics devices physics and technology and nanosciences in different French Institutions and Universities.

Member of the Electrochemical Society. Research Director of French CEA since 2002. IEEE Distinguished Lecturer since January 2004. “Chevalier de l’Ordre National du Mérite” Decree of French Presidence of November 2004. Recipient of the “2005 Grand Prix de l’Académie des Technologies - Prix Chéreau Lavet”. Fellow of the IEEE since January 1 st, 2006.