The world's leading professional association
for the advancement of technology
Text size »A  A  A  
 » EDS Home
 » EDS Publications Home
 » T-ED Publications Office
 » T-ED Editor-in-Chief & Editors
 » T-ED Information for Authors
 » IEEE Guidelines for Authors
 » LaTeX Word Templates
 » IEEE Copyright Information
 » Editorial - Mulitple Submissions and Prior Publication
 » Editorials - Citing Prior Work
 » Editorial - Confidentiality of Reviews
 » Editorial - Touchstones of a Quality Compact Model
 » Editorial - Bipolar Special Issue - Hell's Bells Audio
 » What is in a Page Charge?

Herve Jaouen
 

MOS Devices and Technology

Herve Jaouen
STMicroelectronics
850 rue Jean Monnet
F-38926 Crolles Cedex, France
Tel: +33 438922223
Fax: +33 438922951
Cell: +33 680969191
E-mail: herve.jaouen@st.com


Hervé JAOUEN (SM’01) obtained an Engineering Degree in 1979 and a Ph.D. degree in 1984 from the Institut National Polytechnique de Grenoble (France). From 1981 to 1989, he was Associate Professor at the “Institut National Polytechnique de Grenoble”, France, where he developed for his PhD a novel technique of RTP: the microwave annealing of semiconductors. He then worked on the electronic transport properties of disordered matter. In 1989 he joined the Technology CAD group of SGS Thomson Microelectronics, where he was involved in the STORM EEC program with th goal of developing a 2-D process simulation tool. Next he was managed the TCAD group of the Crolles’ Plant for STMicroelectronics. Since 2004, he has been the head of the ST Modeling Department in Crolles. The scope covered by his department includes TCAD, Compact Modeling and ESD Modeling.

Dr. Jaouen has published over 50 papers in the area of microelectronics and holds 18 granted US patents in the field. He holds positions on the technical program committees of ESSDERC, SISPAD, ESREF conferences, as well as for the GADEST workshop and was a member of the IEDM technical program committee. He serves as European representative for the ITRS Modeling and Simulation ITWG. Dr. Jaouen was and is involved in the coordination of the activity of STMicroelectronics in the technical management committees of numerous IST European Community Programs, such as ADEQUAT, HUNT, ACE, ARTEMIS, SUGGERT. He holds positions in the management committees of some French national research programs such as ANR-PNANO on nanotechnology and ANR-CIS on high performance computing.

His research interests cover the physics of electronic transport, quantum and solid state phenomena, the electrical, mechanical and electro-mechanical properties of materials and devices, modeling and simulation of technological processes and electrical behavior of devices (CMOS, BiCMOS , Analog and RF) and the compact modeling associated with them.



Please scroll to see more.


Editor-in-Chief
Douglas P. Verret, Incoming T-ED Editor-in-Chief

Bipolar Devices
John Cressler

Compound
Semiconductor Devices
Mehdi Anwar

Compound
Semiconductor Devices
Supriyo Bandyopadhyay

Device and Process
Modeling
Colin C. McAndrew

Display Technology
Heung-Sik Tae

Image Sensors
John R. Tower

Molecular &
Organic Devices
Jerzy Kanicki

MOS Devices &
Technology
Simon Deleonibus

MOS Devices &
Technology
Herve Jaouen

MOS Devices &
Technology
Christoph Jungemann

MOS Devices &
Technology
M. Jagadesh Kumar

MOS Devices &
Technology
Chih-Yuan Lu

MOS Devices &
Technology
Hisayo S. Momose

MOS Devices &
Technology
V. Ramgopal Rao

Nano-
electronics
Mark Reed

Optoelectronic Devices
Leda Lunardi

Reliability
John Suehle

Solid State
Jamal Deen

Solid State Energy
Sources
Paul N. Panayotatos

Solid State
Power
M. Ayman Shibib

Solid State Sensors & Actuators
Clark T.-C. Nguyen

Vacuum Electron Devices
William L. Menninger

 


IEEE Home   |   Sitemap   |   Search   |   Privacy & Security   |   Terms & Conditions    |   Nondiscrimination Policy