H. S. Momose received the M.S. degree from Ochanomizu Women's University, Japan, in 1984 and the Ph.D. degree from Tokyo Institute of Technology, Japan, in 2006.

In 1984, she joined Toshiba Corporation, Japan, where she was engaged in the development of static RAMs and logic LSIs and the research of hot-carrier reliability, oxynitride gate, Ni salicide and ultra-thin gate oxide MOSFETs in the direct-tunneling regime. Her current interests include RF characteristics and the related issues of CMOS analog devices. She has authored or co-authored more than 100 papers published in technical journals or presented at international conferences.

   　Dr. Momose is an IEEE Fellow and an EDS elected Adcom member. She served as a technical program committee member for IRPS, IEDM, EDSSC and MIXDES. Since 2005, she has served as an editor of Trans. on Electron Devices and the Microelectronics Reliability.