Received PhD in electrical engineering from the University of Florida, Gainesville, Florida in 1979. He stayed afterwards at the University of Florida as an Adjunct Assistant Professor in the Electrical Engineering Dept, where he did research on photovoltaic solar cells and developed the first model for the polysilicon emitter in bipolar devices. In 1980, he joined Bell Laboratories in Reading, Pennsylvania, as a Member of Technical Staff working on the development of high voltage integrated circuits for telecommunications switching systems. He developed and introduced to high volume manufacturing the first 600 V IC, the gated diode crosspoint array (GDX) for AT&T’s first fully electronic switching system, 5ESS™. During that development, he worked on all aspects of semiconductor development that included device design, device physics, modeling, technology development, yield enhancement, low-cost packaging and reliability. For his contributions, he was awarded the Distinguished Bell Labs Staff award in 1987 along with several recognition awards. He also developed a 350 V BCDMOS technology in dielectric isolation for telecommunications switching systems and opt-isolators, also known as solid state relays. He was also involved in the development of BCDMOS technology for a DC to DC converter for extreme radiation environments. Among his achievements was the development of a low cost high voltage BCDMOS technology that had the lowest number of mask layers for any BCDMOS technology, reducing the cycle time by 30% and optimizing the device design to achieve 30% area reduction thus cutting the cost of manufacturing by about 50%. In 2001, he was among the first group of Bell Labs technical staff to be promoted to Consulting Member of Technical Staff. He then worked on the development of RF power amplifier technology based on 80 V LDMOS for cellular telecommunications base stations in the 800 MHz to above 2 GHz range. He developed and qualified two generations of technology both in-house and at two foundries and demonstrated for the first time that the hot carrier degradation mechanism in RFLDMOS can be improved by field plate design. In 2005 he joined International Rectifier, El Segundo, California, as Director of HVIC Technology Development responsible for development of 600 V ICs of Gen5 and Gen6 for various consumer and industrial applications. In 2007, Dr shibib joined Fultec Semiconductor, Mountain View, CA, as Vice President of Semiconductor Technology, leading a team responsible for the device design, technology development and introduction to manufacturing of power devices and ICs used in circuit protection. Dr. Shibib published more than 40 technical papers in conferences and journals, edited two books on power devices and ICs and was granted 38 US patents in the field of power devices, ICs and technologies with others pending. He is a Fellow of IEEE, a founding member and 1991 general chairman of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) and contributed to the technical committees of many conferences including ISPSD, ECS, IEDM, PESC and IRPS. He was awarded the IEEE Third Millennium Medal in recognition for many IEEE and Electron Devices Society activities that included Section Chairman (1988-1989), EDS Chapter Chairman, EDS AdCom elected member, EDS North-America-East region chairman, Power Devices and ICs Technical Committee Chairman (1991-2003), Editor for Solid State Power of the Transactions on Electron Devices (1997-current). He is also a distinguished lecturer for EDS and has given many lectures in the US, Japan and Korea. Dr Shibib has also been involved in MS and PhD committees of about 15 EE students at different universities in the US and abroad, and has collaborated with research activities on power device modeling and characterization with several universities in the US.