Gitae Jeong received the B.S., M.S., and Ph.D. degrees in physics from Seoul National University, Seoul, Korea, in 1989, 1991, and 1995, respectively. He has been with Samsung Electronics Co., Ltd., since 1995, where he had been involved in the development of 512 Mb DRAM, 1 Gb DRAM and 4 Gb DRAM. He was involved in the development of 0.13mm DRAM from its development at R&D center to transferring to manufacturing lines during period of 1999-2002. He was also involved in the development of 4Gb DRAM for 1998~1999 and 1Gb DRAM using 0.18mm CMOS technologies during 1995~1996. Since 2002, he is involved in the development of next generation new memories. His current major activity is focused on the development of non-volatile high density memories such as Phase-Change RAM. His research interests are device physics in nano-scale dimension, memory device reliability and emerging new memories with new concept. He has served as a subcommittee member for IEDM.