Yen-Hao Shih received his B.S. and Ph. D degrees from National Taiwan University, Taipei, Taiwan, R.O.C., in 1997 and 2002, respectively, both in electrical engineering.

In January 2002, he joined Macronix Emerging Central Lab, Macronix International Co., Ltd., as a device engineer studying and improving the reliability performance of a nitride-based Flash memory. He helped clarify several important reliability issues characteristic of that technology. He holds eleven US patents in this field.

Since 2007, he has been assigned to the IBM/Macronix PCRAM joint project in IBM T.J. Watson Research Center, Yorktown Heights, NY, as a visiting scholar for Phase Change Memory reliability.  He developed a new characterization method to determine the memory cells’ status during retention time, and he proposed a two-mechanism model to explain the array distributions in Phase Change Memories.

His main research areas include conventional/emerging nonvolatile memories, CMOS technology, and semiconductor device physics and modeling.