Jason C. S. Woo received the B. A. Sc. (Hons) degree in engineering science from the University of Toronto, Canada, in 1981, and the M. S. and Ph. D. degrees in electrical engineering from Stanford University in 1982 and 1987, respectively. He joined the department of electrical engineering of UCLA in 1987 and is currently a professor. He served on the IEEE IEDM program in 1991, 1992, 1996 and 1997 and  was the publicity chairman in 1993. He also served on the IEEE SOI conference committee and was the technical program chairman for the conference in 1999 and the general chairman in 2000. He served on the technical committee of the VLSI Technology Symposium since 1992 and was the technical program committee co-chair/chair in 2005-2006 and the general co-chair/chair in 2007-2008. He is also a technical program committee member for the ESSDERC conference and the solid-state devices and materials conference in Japan. He received a faculty development award from IBM from 1987-1989.

His research interests are in the physics and technology of novel device and device modeling. He has done work on low temperature device for VLSI and space applications, SOI BiCMOS and GeSi BiCMOS. Significant achievements include the analysis and fabrication of cryogenic Bipolar transistors, the identification of hot-carrier reliability failure modes at reduced temperatures, the first demonstration of GeSi quantum-well MOSFET's, and the investigation of device physics/technology for deep submicron SOI CMOS. He has also worked on tunnel junction transistors and graphene channel MOSFETs for RF and low power applications. He has authored or coauthored over 150 papers in technical journals and refereed conference proceedings in these areas.